INFINEON BSO130P03S

BSO130P03S
OptiMOS®-P Small-Signal-Transistor
Product Summary
Features
• P-Channel
• Enhancement mode
V DS
-30
V
R DS(on),max
13
mΩ
ID
-11.3
A
• Logic level
• 150°C operating temperature
• Avalanche rated
P-DSO-8
• dv /dt rated
• Ideal for fast switching buck converter
Type
Package
Ordering Code
Marking
BSO130P03S
P-DSO-8
Q67042-S4233
130P3S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Value
Symbol Conditions
ID
≤10 secs
steady state
T A=25 °C1)
-11.3
-9.2
T A=70 °C1)
-9.1
-7.4
Pulsed drain current
I D,pulse
T A=25 °C2)
-45
Avalanche energy, single pulse
E AS
I D=11.3 A, R GS=25 Ω
148
Reverse diode dv /dt
dv /dt
I D=11.3 A, V DS=20 V,
di /dt =-200 A/µs,
T j,max=150 °C
-6
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T A=25 °C1)
2.36
A
mJ
kV/µs
±25
V
1.56
-55 ... 150
W
°C
55/150/56
IEC climatic category; DIN IEC 68-1
Rev. 1.0
Unit
page 1
2004-01-21
BSO130P03S
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
35
minimal footprint,
t p≤10 s
-
-
110
minimal footprint,
steady state
-
-
150
6 cm2 cooling area1),
t p≤10 s
-
-
53
6 cm2 cooling area1),
steady state
-
-
80
Thermal characteristics
Thermal resistance,
junction - soldering point
R thJS
Thermal resistance,
junction - ambient
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250µA
-30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS,
I D=-140 µA
-1
-1.5
-2.2
Zero gate voltage drain current
I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
-
-0.1
-1
V DS=-30 V, V GS=0 V,
T j=125 °C
-
-10
-100
V
µA
Gate-source leakage current
I GSS
V GS=-25 V, V DS=0 V
-
-10
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-10 V,
I D=-11.3 A
-
9.9
13.0
mΩ
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-9.5 A
14
27
-
S
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 2
2004-01-21
BSO130P03S
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2650
3520
-
708
942
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
580
870
Turn-on delay time
t d(on)
-
13
20
Rise time
tr
-
16
24
Turn-off delay time
t d(off)
-
70
105
Fall time
tf
-
62
93
Gate to source charge
Q gs
-
-7
-9
Gate charge at threshold
Q g(th)
-
-3.7
-5.0
Gate to drain charge
Q gd
-
-21
-32
Switching charge
Q sw
-
-25
-36
Gate charge total
Qg
-
-61
-81
Gate plateau voltage
V plateau
-
-2.6
-
Output charge
Q oss
-
-22
-29
-
-
-2.1
-
-
-45
V GS=0 V,
V DS=-25 V, f =1 MHz
V DD=-15 V,
V GS=-10 V,
I D=-1 A, R G=6 Ω
pF
ns
Gate Charge Characteristics3)
V DD=-24 V, I D=11.3 A,
V GS=0 to -10 V
V DD=-15 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=-11.3 A,
T j=25 °C
-
-0.84
-1.2
V
Reverse recovery time
t rr
V R=15 V, I F=-11.3A,
di F/dt =100 A/µs
-
26
33
ns
Reverse recovery charge
Q rr
-
16
20
nC
2)
3)
T A=25 °C
A
See figure 3
See figure 16 for gate charge parameter definition
Rev. 1.0
page 3
2004-01-21
BSO130P03S
2 Drain current
P tot=f(T A); t p≤10 s
I D=f(T A); |V GS|≥10 V; t p≤10 s
3
12
2.5
10
2
8
-I D [A]
P tot [W]
1 Power dissipation
1.5
6
1
4
0.5
2
0
0
0
40
80
120
160
0
40
80
T A [°C]
160
T A [°C]
3 Safe operation area
4 Max. transient thermal impedance
1)
I D=f(V DS); T A=25 °C ; D =0
Z thJS=f(t p)
parameter: t p
parameter: D =t p/T
102
120
102
100
100
10
µs
1 µs
100 µs
101
1 ms
10
101
0.2
10
0.1
10 ms
Z thJS [K/W]
-I D [A]
limited by on-state
resistance
100
0.5
1
0.05
100
1
0.02
0.01
10-1
10-1
0.1
0.1
DC
10-2
10-2
0.01
0.1
1
-1
10
Rev. 1.0
single pulse
10
0
10
100
1
-V DS [V]
10
2
10
page 4
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
10-5
10-4
10-3
10-2
10-1
100
101
t p [s]
2004-01-21
BSO130P03S
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
40
45
-10 V
-2.5 V
-3.5 V
-4.5 V
40
-2.7 V
-3.2 V
-3 V
35
35
30
-3.2 V
R DS(on) [mΩ]
-I D [A]
30
25
-3 V
20
25
-3.5 V
20
15
-4.5 V
10
-10 V
15
-2.7 V
10
-2.5 V
5
5
-2.3 V
0
0
0
1
2
0
3
10
20
-V DS [V]
30
40
-I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
60
40
40
g fs [S]
-I D [A]
30
20
20
10
150 °C
25 °C
0
0
0
1
2
3
4
10
20
30
-I D [A]
-V GS [V]
Rev. 1.0
0
page 5
2004-01-21
BSO130P03S
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-11.3 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-140 µA
20
2.5
2
12
1.5
-V GS(th) [V]
R DS(on) [mΩ]
98 %
16
typ.
8
4
max.
typ.
min.
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
100
10000
25 °C, typ
150 °C, typ
103
10
Coss
1000
25 °C, 98%
I F [A]
C [pF]
Ciss
150 °C, 98%
Crss
1
102
0.1
100
0
10
20
30
0.5
1
1.5
-V SD [V]
-V DS [V]
Rev. 1.0
0
page 6
2004-01-21
BSO130P03S
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=-5.5 A pulsed
parameter: T j(start)
parameter: V DD
100
12
-6 V
10
-15 V
8
-V GS [V]
-I AV [A]
-24 V
25 °C
10
6
100 °C
4
125 °C
2
1
0
1
10
100
1000
0
20
40
60
-Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 µA
36
V GS
34
Qg
-V BR(DSS) [V]
32
30
28
V g s(th)
26
24
Q g (th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev. 1.0
page 7
2004-01-21
BSO130P03S
Package Outline
P-DSO-8: Outline
Footprint
Packaging
Tape
Tube
Dimensions in mm
Rev. 1.0
page 8
2004-01-21
BSO130P03S
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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regarding circuits, descriptions and charts started herein.
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For further information on technology, delivery terms and conditions and prices, please contact your
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(see address list).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
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be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
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Rev. 1.0
page 9
2004-01-21