IPBH6N03LA G OptiMOS®2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications V DS 25 V R DS(on),max 6.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) PG-TO263-3-2 • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Type Package Marking IPBH6N03LA G PG-TO263-3-2 H6N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 50 T C=100 °C 50 Pulsed drain current I D,pulse T C=25 °C3) 350 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 150 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage4) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) Rev. 1.2 Unit A mJ kV/µs ±20 V 71 W -55 ... 175 °C 55/175/56 J-STD20 and JESD22 page 1 2006-05-11 IPBH6N03LA G Parameter Values Symbol Conditions Unit min. typ. max. - - 2.1 minimal footprint - - 62 6 cm2 cooling area5) - - 40 25 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=30 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=25 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 8.2 10.2 mΩ V GS=10 V, I D=50 A - 5.2 6.2 - 1.3 - Ω 34 68 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 2) Current is limited by bondwire; with an R thJC=2.1 K/W the chip is able to carry 80 A. 3) See figure 3 4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5 Diagrams are related to straight lead versions. Rev. 1.2 page 2 2006-05-11 IPBH6N03LA G Parameter Values Symbol Conditions Unit min. typ. max. - 1800 2390 - 690 920 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 85 130 Turn-on delay time t d(on) - 7 10 Rise time tr - 6 8 Turn-off delay time t d(off) - 23 35 Fall time tf - 4.2 6.3 Gate to source charge Q gs - 5.9 7.8 Gate charge at threshold Q g(th) - 2.9 3.8 Gate to drain charge Q gd - 4.1 6.1 Switching charge Q sw - 7.1 10 Gate charge total Qg - 14 19 Gate plateau voltage V plateau - 3.3 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V - 13 17 Output charge Q oss V DD=15 V, V GS=0 V - 15 20 - - 50 - - 350 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 Ω pF ns Gate Charge Characteristics 6) V DD=15 V, I D=25 A, V GS=0 to 5 V nC V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.94 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC 6) Rev. 1.2 T C=25 °C A See figure 16 for gate charge parameter definition page 3 2006-05-11 IPBH6N03LA G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 80 60 70 50 60 40 I D [A] P tot [W] 50 40 30 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs limited by on-state resistance 10 µs 0.5 100 Z thJC [K/W] 100 I D [A] 100 µs DC 0.2 0.1 0.05 1 ms 10 10-1 10 ms 0.02 0.01 10-2 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.2 single pulse page 4 2006-05-11 IPBH6N03LA G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 25 100 3V 10 V 90 3.2 V 3.8 V 3.5 V 4.1 V 4.5 V 20 80 4.1 V R DS(on) [mΩ] 70 I D [A] 60 3.8 V 50 40 15 4.5 V 10 3.5 V 30 20 10 V 5 3.2 V 3V 10 2.8 V 0 0 0 1 2 0 3 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 90 90 80 80 70 70 60 g fs [S] I D [A] 60 50 50 40 40 30 30 20 20 175 °C 10 10 25 °C 0 0 0 1 2 3 4 5 Rev. 1.2 0 20 40 60 80 I D [A] V GS [V] page 5 2006-05-11 IPBH6N03LA G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 12 2.5 10 2 300 µA 98 % 6 1.5 V GS(th) [V] R DS(on) [mΩ] 8 typ 30 µA 1 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 25 °C Ciss 103 100 Coss 175°C 98% I F [A] C [pF] 175 °C Crss 102 10 101 1 0 10 20 30 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] Rev. 1.2 25°C 98% page 6 2006-05-11 IPBH6N03LA G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=25 A pulsed parameter: Tj(start) parameter: V DD 100 12 25 °C 15 V 10 5V 20 V 100 °C 150 °C V GS [V] I AV [A] 8 10 6 4 2 1 0 1 10 100 1000 0 10 20 30 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 29 V GS 28 Qg 27 V BR(DSS) [V] 26 25 24 V g s(th) 23 22 Q g(th) 21 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.2 page 7 2006-05-11 IPBH6N03LA G Package Outline PG-TO263-3-2 PG-TO263-3-2: Outline Footprint Rev. 1.2 Packaging page 8 2006-05-11 IPBH6N03LA G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 9 2006-05-11