IRF IRF7307PBF

PD - 95179
IRF7307PbF
Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
HEXFET® Power MOSFET
l
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
N-Ch
P-Ch
20V
-20V
VDSS
P-CHANNEL MOSFET
RDS(on) 0.050Ω 0.090Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
I D @ TA = 70°C
I DM
P D @TA = 25°C
VGS
dv/dt
TJ, TSTG
10 Sec. Pulse Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
5.7
5.2
4.1
21
-4.7
-4.3
-3.4
-17
2.0
0.016
± 12
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
62.5
°C/W
10/7/04
IRF7307PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductace
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max.
20
—
—
-20 —
—
— 0.044 —
— -0.012 —
—
— 0.050
—
— 0.070
—
— 0.090
—
— 0.140
0.70 —
—
-0.70 —
—
8.30 —
—
4.00 —
—
—
— 1.0
—
— -1.0
—
—
25
—
— -25
––
— ±100
—
—
20
—
—
22
—
— 2.2
—
— 3.3
—
— 8.0
—
— 9.0
— 9.0 —
— 8.4 —
—
42
—
—
26
—
—
32
—
—
51
—
—
51
—
—
33
—
— 4.0 —
— 6.0 —
— 660 —
— 610 —
— 280 —
— 310 —
— 140 —
— 170 —
Units
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.6A ƒ
VGS = 2.7V, ID = 2.2A ƒ
VGS = -4.5V, ID = -2.2A ƒ
VGS = -2.7V, ID = -1.8A ƒ
VDS = VGS, I D = 250µA
VDS = VGS, I D = -250µA
VDS = 15V, I D = 2.6A ƒ
VDS = -15V, I D = -2.2A ƒ
VDS = 16V, VGS = 0V
VDS = -16V, V GS = 0V,
VDS = 16V, VGS = 0V, TJ = 125°C
VDS = -16V, V GS = 0V, TJ = 125°C
VGS = ± 12V
N-Channel
I D = 2.6A, VDS = 16V, VGS = 4.5V
P-Channel
I D = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
RD = 3.8Ω
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0Ω,
RD = 4.5Ω
ƒ
ƒ
Between lead tip
and center of die contact
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
ƒ
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions
—
— 2.5
—
— -2.5
A
—
—
21
—
— -17
—
— 1.0
TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
V
—
— -1.0
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
—
29
44
N-Channel
ns
—
56
84
TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
—
22
33
P-Channel
ƒ
nC
TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
—
71 110
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ N-Channel ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
„ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 23 )
P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
IRF7307PbF
N-Channel
1000
1000
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
TOP
100
10
10
1.5V
20µs PULSE WIDTH
TJ = 25°C
A
1.5V
1
0.1
100
1
10
100
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
10
VDS = 15V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
1.5
1.0
0.5
0.0
-60 -40 -20
A
5.0
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
Coss
Crss
300
0
1
10
V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
40
60
A
80 100 120 140 160
Fig 4. Normalized On-Resistance
Vs. Temperature
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
600
VGS = 4.5V
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
900
100
ID = 4.3A
VGS , Gate-to-Source Voltage (V)
1200
10
Fig 2. Typical Output Characteristics
100
1.5
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
TJ = 150°C
A
1
0.1
100
A
I D = 2.6A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 11
0
0
5
10
15
20
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
25
A
IRF7307PbF
N-Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150°C
TJ = 25°C
1
0.0
0.5
1.0
1.5
2.0
10
1ms
TA = 25 °C
TJ = 150 °C
Single Pulse
VGS = 0V
0.1
100us
1
0.1
A
2.5
1
RD
VDS
VGS
5.0
I D , Drain Current (A)
100
Fig 8. Maximum Safe Operating Area
6.0
D.U.T.
RG
4.0
3.0
+
V
- DD
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
1.0
0.0
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10ms
Fig 10a. Switching Time Test Circuit
25
50
75
100
TC , Case Temperature
125
150
( °C)
VDS
90%
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
VGS
td(on)
50KΩ
12V
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
.2µF
.3µF
D.U.T.
+
V
- DS
QG
4.5V
VGS
QGS
3mA
QGD
VG
IG
ID
Current Sampling Resistors
Fig 11a. Gate Charge Test Circuit
Charge
Fig 11b. Basic Gate Charge Waveform
IRF7307PbF
P-Channel
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
10
1
-1.5V
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.01
0.1
1
10
10
1
-1.5V
20µs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
Fig 12. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 150°C
1
VDS = -15V
20µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
A
I D = -3.6A
1.5
1.0
0.5
0.0
-60
-VGS , Gate-to-Source Voltage (V)
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
1000
C oss
Crss
500
0
10
-20
0
20
40
60
80
A
100 120 140 160
Fig 15. Normalized On-Resistance
Vs. Temperature
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
1
VGS = -4.5V
-40
TJ , Junction Temperature (°C)
Fig 14. Typical Transfer Characteristics
1500
A
100
Fig 13. Typical Output Characteristics
2.0
100
TJ = 25°C
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
1
100
A
-VDS , Drain-to-Source Voltage (V)
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
I D = -2.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 22
0
0
5
10
15
20
25
A
Q G , Total Gate Charge (nC)
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
IRF7307PbF
P-Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
100
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.3
0.6
0.9
1.2
10
1ms
1
A
1.5
TA = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
Fig 18. Typical Source-Drain Diode
Forward Voltage
Fig 19. Maximum Safe Operating Area
RD
VDS
5.0
VGS
4.0
-ID , Drain Current (A)
10ms
D.U.T.
RG
-
+
3.0
VDD
-4.5V
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
0.0
Fig 21a. Switching Time Test Circuit
25
50
75
100
TC , Case Temperature
125
150
( °C)
VDS
90%
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
VGS
td(on)
50KΩ
12V
tr
t d(off)
tf
Fig 21b. Switching Time Waveforms
.2µF
.3µF
D.U.T.
+VDS
QG
-4.5V
VGS
QGS
-3mA
QGD
VG
IG
ID
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit
Charge
Fig 22b. Basic Gate Charge Waveform
IRF7307PbF
N & P-Channel
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.1
0.0001
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7307PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 24. For N and P Channel HEXFETS
[ISD ]
IRF7307PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
6X
2
3
0.25 [.010]
4
8X b
0.25 [.010]
MIN
.0532
.0688
1.35
1.75
A
MAX
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
A
e
e1
MILLIMET ERS
MAX
A
5
INCHES
MIN
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
IRF7307PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04