IRF IRL3102PBF

PD- 95658
IRL3102PbF
HEXFET® Power MOSFET
Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
l Lead-Free
Description
l
D
VDSS = 20V
RDS(on) = 0.013Ω
G
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
ID = 61A
S
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
V GS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
61
39
240
89
0.71
± 10
14
Units
A
W
W/°C
V
V
220
35
8.9
5.0
-55 to + 150
mJ
A
mJ
V/ns
300 (1.6mm from case )
10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.4
–––
62
°C/W
07/30/04
IRL3102PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
20
–––
–––
–––
0.70
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.016
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
130
80
110
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.015
VGS = 4.5V, ID = 37A „
Ω
0.013
VGS = 7.0V, ID = 37A „
–––
V
VDS = VGS , ID = 250µA
–––
S
VDS = 16V, ID = 35A
25
VDS = 20V, VGS = 0V
µA
250
VDS = 10V, V GS = 0V, TJ = 150°C
100
VGS = 10V
nA
-100
VGS = -10V
58
ID = 35A
14
nC VDS = 16V
21
VGS = 4.5V, See Fig. 6 „
–––
VDD = 10V
–––
ID = 35A
ns
–––
RG = 9.0Ω, VGS = 4.5V
–––
RD = 0.28Ω, „
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
G
from package
––– 7.5 –––
and center of die contact
––– 2500 –––
VGS = 0V
––– 1000 –––
pF
VDS = 15V
––– 360 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
61
––– –––
showing the
A
G
integral reverse
––– ––– 240
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 37A, VGS = 0V „
––– 59
88
ns
TJ = 25°C, IF = 35A
––– 110 160
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
ƒ ISD ≤ 35A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
‚ Starting TJ = 25°C, L = 0.36mH
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
RG = 25Ω, IAS = 35A.
TJ ≤ 150°C
D
S
IRL3102PbF
1000
1000
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
3.0V
4.0V
BOTTOM3.0V
2.5V
BOTTOM 2.5V
100
2.5V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
100
2.5V
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
100
TJ = 150 ° C
10
V DS = 15V
20µs PULSE WIDTH
4
5
6
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
1000
3
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 150 °C
10
0.1
100
VDS , Drain-to-Source Voltage (V)
2
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
BOTTOM3.0V
2.5V
BOTTOM 2.5V
TOP
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
TOP
7
ID = 61A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3102PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
3600
3000
Ciss
2400
1800
Coss
1200
Crss
600
15
VGS , Gate-to-Source Voltage (V)
4200
10
VDS = 16V
12
9
6
3
0
1
ID = 35A
0
100
0
20
VDS , Drain-to-Source Voltage (V)
60
80
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
100
100
TJ = 150 ° C
TJ = 25 ° C
10
1
0.2
100us
1ms
10
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.8
1.4
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.6
1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL3102PbF
500
EAS , Single Pulse Avalanche Energy (mJ)
70
ID , Drain Current (A)
60
50
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
TOP
400
BOTTOM
ID
16A
22A
35A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
0.015
RDS(on), Drain-to-Source On Resistance ( Ω )
R DS (on), Drain-to-Source On Resistance( Ω )
IRL3102PbF
0.014
VGS = 4.5V
0.013
0.012
0.011
VGS = 7.0V
0.010
0
20
40
60
80
I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
0.020
0.018
0.016
0.014
ID = 61A
0.012
0.010
0.008
A
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
10
IRL3102PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
3
4- DRAIN
14.09 (.555)
13.47 (.530)
3X
1.40 (.055)
3X
1.15 (.045)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB LE D ON WW 19, 1997
IN T H E AS S E MB LY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04