PD -9.1676A
IRL3502S
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
D
VDSS = 20V
RDS(on) = 0.007W
G
Description
ID = 110A
S
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
D 2 P ak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
110
67
420
140
1.1
± 10
14
A
W
W/°C
V
V
390
64
14
5.0
-55 to + 150
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RqJC
RqJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
0.89
40
°C/W
11/18/97
IRL3502S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Min.
20
–––
–––
–––
0.70
77
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
IGSS
Typ.
–––
0.019
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
140
96
130
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1.0mA
0.008
VGS = 4.5V, ID = 64A
W
0.007
VGS = 7.0V, ID = 64A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 64A
25
VDS = 20V, VGS = 0V
µA
250
VDS = 10V, VGS = 0V, TJ = 150°C
100
VGS = 10V
nA
-100
VGS = -10V
110
ID = 64A
27
nC
VDS = 16V
39
VGS = 4.5V, See Fig. 6
–––
VDD = 10V
–––
ID = 64A
ns
–––
RG = 3.8W, VGS = 4.5V
–––
RD = 0.15W,
Between lead,
nH
7.5 –––
and center of die contact
4700 –––
VGS = 0V
1900 –––
pF
VDS = 15V
640 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 110
showing the
A
G
integral reverse
––– ––– 420
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 64A, VGS = 0V
––– 87 130
ns
TJ = 25°C, IF = 64A
––– 200 310
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width £ 300µs; duty cycle £ 2%.
max. junction temperature.
Starting TJ = 25°C, L = 190µH
RG = 25W , IAS = 64A.
Uses IRL3502 data and test conditions
ISD £ 64A, di/dt £ 86A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
`
IRL3502S
1000
1000
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
TOP
TOP
100
100
2.25V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
2.25V
10
0.1
100
VDS , Drain-to-Source Voltage (V)
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
100
V DS = 15V
20µs PULSE WIDTH
3
4
5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
1000
2
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
20µs PULSE WIDTH
TJ = 150 °C
6
ID = 110A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3502S
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
6000
Ciss
4000
Coss
2000
Crss
15
VGS , Gate-to-Source Voltage (V)
VGS =
Ciss =
Crss =
Coss =
0
1
10
ID = 64A
VDS = 16V
12
9
6
3
0
100
0
VDS , Drain-to-Source Voltage (V)
40
80
120
160
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
10us
I D , Drain Current (A)
C, Capacitance (pF)
8000
TJ = 150 ° C
100
100us
100
TJ = 25 ° C
10
0.5
V GS = 0 V
1.0
1.5
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.5
1ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
1
10ms
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL3502S
120
EAS , Single Pulse Avalanche Energy (mJ)
800
LIMITED BY PACKAGE
I D , Drain Current (A)
100
80
60
40
20
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
TOP
BOTTOM
ID
29A
40A
64A
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
0.05
0.02
0.01
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
0.014
RDS (on) Drain-to-Source On Resistance (W)
RDS (on) Drain-to-Source On Resistance (W)
IRL3502S
0.012
0.010
0.008
VG S = 4.5V
0.006
VG S = 7.0V
0.004
A
0
100
200
300
400
I D , D rain C urrent (A)
Fig 12. On-Resistance Vs. Drain Current
0.010
0.008
I D = 64A
0.006
0.004
A
2.0
3.0
4.0
5.0
6.0
7.0
V G S , Gate-to-Source Voltage (V )
Fig 13. On-Resistance Vs. Gate Voltage
8.0
IRL3502S
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
M A X.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
15.4 9 (.610)
14.7 3 (.580)
3
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
3X
5.08 (.200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
0.25 (.010)
M
8.8 9 (.350)
REF.
1.39 (.055)
1.14 (.045)
B A M
M IN IM U M R E C O M M E N D E D F O O TP R IN T
11.43 (.450)
N O TE S :
1 D IM E N S IO N S A F T E R S O LD E R D IP .
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
LE A D A S S IG N M E N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
Part Marking Information
D2Pak
IN TE R N A T IO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CODE
A
PART NUMBER
F530S
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
2.54 (.100)
2X
IRL3502S
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 0 .9 0 (.4 2 9 )
1 0 .7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IR E C T IO N
1 3.5 0 (.5 32 )
1 2.8 0 (.5 04 )
2 7.4 0 (1 .07 9)
2 3.9 0 (.9 41 )
4
330.00
(14.173)
M A X.
N O TES :
1. C O M F O R M S T O E IA -41 8 .
2. C O N T R O L LIN G D IM E N S IO N : M ILL IM E T E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
6 0.0 0 (2 .3 6 2)
M IN .
26 .40 (1.039)
24 .40 (.961)
3
3 0.4 0 (1 .1 97 )
MAX.
4
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EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/97