PD - 91305C
Advanced Process Technology
l Surface Mount (IRFZ46NS)
l Low-profile through-hole (IRFZ46NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
IRFZ46NS
IRFZ46NL
HEXFET® Power MOSFET
l
D
VDSS = 55V
RDS(on) = 0.0165Ω
G
ID = 53A
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ46NL) is available for lowprofile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
V GS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
53
Units
37
180
3.8
107
0.71
± 20
28
11
5.0
-55 to + 175
A
W
W
W/°C
V
A
mJ
V/ns
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
1.4
40
°C/W
1
04/08/04
IRFZ46NS/IRFZ46NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
V GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
2.0
19
LS
Internal Source Inductance
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
V (BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Typ.
0.057
14
76
52
57
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID =1mA
.0165
Ω
VGS =10V, ID = 28A
4.0
V
VDS = VGS, ID = 250µA
S
VDS = 25V, ID = 28A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, T J = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
72
ID = 28A
11
nC
VDS = 44V
26
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 28A
ns
RG = 12Ω
RD = 0.98Ω, See Fig. 10
Between lead,
nH
7.5
and center of die contact
1696
VGS = 0V
407
pF
VDS = 25V
110
= 1.0MHz, See Fig. 5
583 152
IAS = 28A, L = 389mH
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
53
showing the
A
G
integral reverse
180
p-n junction diode.
S
1.3
V
TJ = 25°C, IS = 28A, VGS = 0V
67 101
ns
TJ = 25°C, IF = 28A
208 312
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 389µH
RG = 25Ω, IAS = 28A. (See Figure 12)
ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRFZ46NS/IRFZ46NL
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
100
10
4.5V
20µs PULSE WIDTH
TCJ == 25°C
T
25°C
1
0.1
1
10
A
100
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
V DS = 25V
20µs PULSE WIDTH
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
A
100
Fig 2. Typical Output Characteristics
2.5
5
1
VDS , Drain-to-Source Voltage (V)
1000
1
20µs PULSE WIDTH
TTCJ =
= 175°C
175°C
1
0.1
Fig 1. Typical Output Characteristics
100
4.5V
10
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
A
I D = 46A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFZ46NS/IRFZ46NL
2800
V GS , Gate-to-Source Voltage (V)
2400
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS = 44V
V DS = 28V
16
Ciss
2000
I D = 28A
12
1600
Coss
1200
800
Crss
400
0
10
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
1
8
0
100
VDS , Drain-to-Source Voltage (V)
20
30
40
50
A
60
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
10
VGS = 0V
1
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
2.4
10µs
100
100µs
10
1ms
10ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFZ46NS/IRFZ46NL
RD
V DS
60
V GS
ID, Drain Current (A)
D.U.T.
RG
Limited By Package
50
+
V-DD
10V
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E AS , Single Pulse Avalanche Energy (mJ)
IRFZ46NS/IRFZ46NL
500
TOP
BOTTOM
400
ID
11A
20A
28A
300
200
100
0
VDD = 25V
25
50
A
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
VDS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
QGD
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFZ46NS/IRFZ46NL
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS
ISD
= 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFZ46NS/IRFZ46NL
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
MAX.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
15.49 (.610)
14.73 (.580)
3
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
1.40 (.055)
1.14 (.045)
3X
3X
5.08 (.200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
REF.
1.39 (.055)
1.14 (.045)
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
NOTES:
1
2
3
4
DIMENSIONS AFTER SOLDER DIP.
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
Part Marking Information
D2Pak
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
8
A
PART NUMBER
F530S
9246
9B
1M
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
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IRFZ46NS/IRFZ46NL
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
1- GATE
IGBT
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
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IRFZ46NS/IRFZ46NL
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/04
10
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