IPD90N06S3L-05 OptiMOS®-T Power-Transistor Product Summary V DS 55 V R DS(on),max 5 mΩ ID 90 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD90N06S3L-05 PG-TO252-3-11 QN06L05 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 90 Unit A 87 Pulsed drain current2) I D,pulse T C=25 °C 360 Avalanche energy, single pulse2) E AS I D=45 A 410 mJ Avalanche current, single pulse I AS 90 A Gate source voltage3) V GS ±16 V Power dissipation P tot 136 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.1 55/175/56 page 1 2007-11-07 IPD90N06S3L-05 Parameter Symbol Values Conditions Unit min. typ. max. - - 1.1 minimal footprint - - 62 6 cm2 cooling area4) - - 40 Thermal characteristics2) Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=80 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=5 V, I D=40 A - 7.6 10 mΩ V GS=10 V, I D=60 A - 4.3 5 Rev. 1.1 page 2 2007-11-07 IPD90N06S3L-05 Parameter Symbol Values Conditions Unit min. typ. max. - 9400 10800 pF - 1200 1800 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 1100 1650 Turn-on delay time t d(on) - 20 - Rise time tr - 57 - Turn-off delay time t d(off) - 68 - Fall time tf - 98 - Gate to source charge Q gs - 41 55 Gate to drain charge Q gd - 27 40 Gate charge total Qg - 128 148 Gate plateau voltage V plateau - 4.4 - V - - 90 A - - 360 0.6 0.9 1.3 V - 47 - ns - 62 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=80 A, R G=7 Ω ns Gate Charge Characteristics2) V DD=11 V, I D=90 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=27.5 V, I F=I S, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 1.1 K/W the chip is able to carry 122 A at 25°C. For detailed information see Application Note ANPS071E. 2) Defined by design. Not subject to production test. 3) Qualified at -5V and +16V. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2007-11-07 IPD90N06S3L-05 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 4 V I D = f(T C); V GS ≥ 4 V 160 100 140 80 120 60 I D [A] P tot [W] 100 80 40 60 40 20 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 100 µs 0.5 100 I D [A] Z thJC [K/W] 1 ms 0.1 10-1 10 0.05 0.01 10-2 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.1 10-7 page 4 2007-11-07 IPD90N06S3L-05 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 12 360 4V 5V 10 V 320 10 6.5 V 280 6V 200 6V 8 R DS(on) [mΩ] I D [A] 240 5.5 V 160 6 8V 4 10 V 5V 120 4.5 V 80 2 4V 40 3.5 V 0 0 0 2 4 6 8 0 10 20 40 60 80 100 120 140 160 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 4 V R DS(on) = f(T j); I D = 60 A; V GS = 10 V parameter: T j 160 8 -55 °C 140 25 °C 120 175 °C 6 R DS(on) [mΩ] I D [A] 100 80 60 4 40 20 0 2 0 1 2 3 4 5 6 V GS [V] Rev. 1.1 -60 -20 20 60 100 140 180 T j [°C] page 5 2007-11-07 IPD90N06S3L-05 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 3 2.5 Ciss 104 2 C [pF] V GS(th) [V] Coss 800µA 1.5 80µA Crss 103 1 0.5 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AV = f(t AV) parameter: T j parameter: T j(start) 100 103 25°C 100°C 150°C I F [A] I AV [A] 102 175 °C 25 °C 0.6 0.8 10 1 10 100 1 0 0.2 0.4 1 1.2 1.4 V SD [V] Rev. 1.1 0.1 1 10 100 1000 t AV [µs] page 6 2007-11-07 IPD90N06S3L-05 13 Typical avalanche Energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 65 1000 22.5 A 800 60 V BR(DSS) [V] E AS [mJ] 600 45 A 400 55 50 90 A 200 45 0 0 50 100 150 -60 200 -20 T j [°C] 20 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 90 A pulsed parameter: V DD 12 V GS 11 V Qg 44 V 10 V GS [V] 8 V plateau 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 50 100 150 Q gate Q gd 200 Q gate [nC] Rev. 1.1 page 7 2007-11-07 IPD90N06S3L-05 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2007-11-07 IPD90N06S3L-05 Revision History Version Changes Date Data Sheet version 1.1 Implementation of avalanche 07.11.2007 current single pulse Data Sheet version 1.1 07.11.2007 Update of package drawing Data Sheet version 1.1 Update of avalanche diagram 12 07.11.2007 and 13 Data Sheet version 1.1 implementation of footnote 2 for 07.11.2007 Eas specification Rev. 1.1 page 9 2007-11-07