INFINEON TLE7276D

TLE7276
Low Drop Linear Voltage Regulator
5V Fixed Output Voltage
Data Sheet
Rev. 1.11, 2010-11-22
Automotive Power
5-V Low Drop Voltage Regulator
TLE 7276
Features
•
•
•
•
•
•
•
Output voltage 5 V ±2%
Ultra low current consumption: typ. 20 μA
300 mA current capability
Inhibit input
Very low-drop voltage
Short-circuit-proof
Suitable for use in automotive electronics
Functional Description
The TLE 7276 is a monolithic integrated low-drop
voltage regulator for load currents up to 300 mA. An input
voltage up to 42 V is regulated to VQ,nom = 5.0 V with a
precision of ±2%. The sophisticated design allows to
achieve stable operation even with ceramic output
capacitors down to 470 nF. The device is designed for
the harsh environment of automotive applications.
Therefore it is protected against overload, short circuit
and overtemperature conditions. Of course the
TLE 7276 can be used also in all other applications, where a stabilized 5 V voltage is
required. Due to its ultra low stand-by current consumption of typ. 20 μA the TLE 7276
is dedicated for use in applications permanently connected to VBAT. The regulator can be
shut down via an Inhibit input. An integrated output sink current circuitry keeps the
voltage at the Output pin Q below 5.5 V even when reverse currents are applied. Thus
connected devices are protected from overvoltage damage.
For applications requiring extremely low noise levels the Infineon voltage regulator family
TLE 42XY and TLE 44XY is more suited than the TLE 7276. A mV-range output noise
on the TLE 7276 caused by the charge pump operation is unavoidable due to the ultra
low quiescent current concept.
Type
Ordering Code
Package
TLE 7276 D
Q67006-A9733
P-TO252-5-1,P-TO252-5-11
TLE 7276 G
Q67006-A9732
P-TO263-5-1
Data Sheet
2
Rev. 1.11, 2010-11-22
TLE 7276
I
TLE 7276
1
5
Q
Overtemperature
Shutdown
Bandgap
Reference
INH
2
1
Inhibit
Charge
Pump
3, Tab
GND
Figure 1
Data Sheet
AEB03609.VSD
Block Diagram
3
Rev. 1.11, 2010-11-22
TLE 7276
GND
1
I
INH N.C.
5
1
5
I GND Q
INH N.C.
Q
PG-TO252 -5-1 .vsd
PG-TO263-5-1.vsd
Figure 2
Pin Configuration P-TO252-5 (D-PAK), P-TO263-5 (D2-PAK)(top view)
Table 1
Pin Definitions and Functions
Pin No.
Symbol
Function
1
I
Input; block to ground directly at the IC with a ceramic capacitor
2
INH
Inhibit Input; low level disables the IC. Integrated pull-down
resistor
3
GND
Ground; internally connected to heat sink
4
N.C.
Not connected
5
Q
Output; block to ground with a ceramic capacitor, C ≥ 470 nF
Data Sheet
4
Rev. 1.11, 2010-11-22
TLE 7276
Table 2
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Test Condition
45
V
–
-1
–
mA
–
VINH
-0.3
45
V
Observe current
limit IINH,max1)
IINH
-1
1
mA
–
VQ
VQ
IQ
-0.3
5.5
V
–
-0.3
6.2
V
t < 10 s2)
-1
–
mA
–
Tj
Tstg
-40
150
°C
–
-50
150
°C
–
Min.
Max.
VI
II
-0.3
Voltage
Current
Input I
Voltage
Current
Inhibit INH
Output Q
Voltage
Voltage
Current
Temperature
Junction temperature
Storage temperature
1) External resistor required to keep current below absolute maximum rating when voltages ≥ 5.5 V are applied.
2) Exposure to these absolute maximum ratings for extended periods (t > 10 s) may affect device reliability.
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 3
Operating Range
Parameter
Symbol
Input voltage
VI
Tj
Junction temperature
Data Sheet
Limit Values
Unit
Remarks
Min.
Max.
5.5
42
V
–
-40
150
°C
–
5
Rev. 1.11, 2010-11-22
TLE 7276
Table 4
Thermal Resistance
Parameter
Junction case
Junction ambient
Rthj-c
Rthj-a
Rthj-a
Limit Values
Unit
Remarks
8
K/W
–
80
K/W
TO2521)
Min.
Max.
–
–
TO2632)
Worst case, regarding peak temperature; zero airflow; mounted on a PCB FR4, 80 × 80 × 1.5 mm3, heat sink
Junction ambient
1)
Symbol
–
55
K/W
area 300 mm2
2) Worst case, regarding peak temperature; zero airflow; mounted on a PCB FR4, 80
area 300 mm2
× 80 × 1.5 mm3, heat sink
Note: In the operating range, the functions given in the circuit description are fulfilled.
Data Sheet
6
Rev. 1.11, 2010-11-22
TLE 7276
Table 5
Electrical Characteristics
VI = 13.5 V; VINH = 5 V; -40 °C < Tj < 150 °C (unless otherwise specified)
Parameter
Symbol
Limit Values
Min.
Typ. Max.
Unit
Measuring Condition
Output Q
Output voltage
VQ
4.9
5.0
5.1
V
0.1 mA < IQ < 300 mA;
6 V < VI < 16 V
Output voltage
VQ
4.9
5.0
5.1
V
0.1 mA < IQ < 100 mA;
6 V < VI < 40 V
Output current limitation IQ
320
–
–
mA
1)
Output current limitation IQ
–
–
800
mA
Iq
–
20
30
μA
Current consumption;
Iq = II - IQ
Iq
–
–
40
μA
Quiescent current;
inhibited
Iq
–
5
9
μA
Drop voltage
Vdr
–
250
500
mV
Load regulation
ΔVQ, lo
-40
15
40
mV
Line regulation
ΔVQ, li
-20
5
20
mV
Power supply ripple
rejection
PSRR
–
60
–
dB
VQ = 0V
IQ = 0.1 mA;
Tj = 25 °C
IQ = 0.1 mA;
Tj ≤ 80 °C
VINH = 0 V;
Tj < 80 °C
IQ = 200 mA;
Vdr = VI - VQ1)
IQ = 5 mA to 250 mA
Vl = 10V to 32 V;
IQ = 5 mA
fr = 100 Hz;
Vr = 0.5 Vpp
Temperature output
voltage drift
dVQ/dT
–
0.5
–
mV/K –
Output Capacitor
CQ
470
–
–
nF
ESR < 3 Ohm
VINH ON
VINH OFF
IINH ON
IINH OFF
3.1
–
–
V
VQ ≥ 4.9 V
–
–
0.8
V
VQ ≤ 0.3 V
–
3
4
μA
–
0.5
1
μA
VINH = 5 V
VINH = 0 V;
Tj < 80 °C
Current consumption;
Iq = II - IQ
Inhibit Input INH
Turn-on Voltage
Turn-off Voltage
H-input current
L-input current
1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V.
Data Sheet
7
Rev. 1.11, 2010-11-22
TLE 7276
Application Information
VBat
TLE 7276
1 I
100
nF
470
nF
Overtemperature
Shutdown
Bandgap
Reference
e. g.
Ignition
VC C
Q 5
2 INH
+
4.7
µF
1
Inhibit
Charge
Pump
GND
3, Tab
Figure 3
AEA03608.VSD
Application Diagram
Input, Output
An input capacitor is necessary for damping line influences. A resistor of approx. 1 Ω in
series with CI, can damp the LC of the input inductivity and the input capacitor.
In contrast to most low drop voltage regulators the TLE 7276 only needs moderate
capacitance at the output to assure stability of the regulation loop. This offers more
design flexibility to the circuit designer providing for cost efficient solutions.
The TLE 7276 requires a ceramic output capacitor of at least 470 nF. In order to damp
influences resulting from load current surges it is recommended to add an additional
electrolytic capacitor of 4.7 μF to 47 μF at the output as shown in Figure 3.
Data Sheet
8
Rev. 1.11, 2010-11-22
TLE 7276
Additionally a buffer capacitor CB of > 10μF should be used for the output to suppress
influences from load surges to the voltage levels. This one can either be an aluminum
electrolytic capacitor or a tantalum capacitor following the application requirements.
A general recommendation is to keep the drop over the equivalent serial resistor (ESR)
together with the discharge of the blocking capacitor below the allowed Headroom of
the Application to be supplied (e.g. typ. dVQ = 350mV).
Since the regulator output current roughly rises linearly with time the discharge of the
capacitor can be calculated as follows:
dVCB = dIQ*dt/CB
The drop across the ESR calculates as:
dVESR = dI*ESR
To prevent a reset the following relationship must be fullfilled:
dVC + dVESR < VRH = 350mV
Example: Assuming a load current change of dIQ = 100mA, a blocking capacitor of CB =
22µF and a typical regulator reaction time under normal operating conditions of dt ~
25µs and for special dynamic load conditions, such as load step from very low base
load, a reaction time of dt ~ 75µs.
dVC = dIQ*dt/CB = 100mA * 25µs/22µF = 113mV
So for the ESR we can allow
dVESR = VRH2 - dVC = 350mV - 113mV = 236mV
The permissible ESR becomes:
ESR = dVESR / dIQ = 236mV/100mA = 2.36Ohm
During design-in of the TLE7469 product family, special care needs to be taken with
regards to the regulators reaction time to sudden load current changes starting from very
low pre-load as well as cyclic load changes. The application note “TLE7x Voltage
Regulators - Application Note about Transient Response at ultra low quiescent current
Voltage Regulators” (see 3_cip05405.pdf) gives important hints for successful design-in
of the Voltage Regulators of the TLE7x family.
Data Sheet
9
Rev. 1.11, 2010-11-22
TLE 7276
Typical Performance Characteristics
Current Consumption Iq versus
Junction Temperature Tj
Current Consumption Iq versus Input
Voltage VI
1_Iq-Tj.vsd
3_IQ-VI.VSD
Iq [µA]
Tj = 25°C
Iq [µA]
VI = 13.5V
100
40
IQ = 100 µA
IQ = 50mA
10
30
IQ = 10mA
IQ = 0.2mA
20
1
10
0.01
-40 -20
0
0
20 40 60 80 100 120 140
10
20
30
Current Consumption Iq versus Output
Current IQ
Output Voltage VQ versus Junction
Temperature Tj
5A_VQ-TJ.VSD
2_IQ-IQ.VSD
30
Iq [µA]
40
VI [V]
Tj [°C]
VI = 13.5 V
VQ [V]
VI = 13.5 V
Tj = 25 °C
Tj = -40 °C
20
5.05
5.00
15
4.95
10
4.90
5
0
Data Sheet
IQ =100µA...100mA
20
40
60
100
-40 -20
IQ [mA]
0
20 40 60 80 100 120 140
Tj [°C]
10
Rev. 1.11, 2010-11-22
TLE 7276
Dropout Voltage Vdr versus Output
Current IQ
Maximum Output Current IQ versus
Junction Temperature Tj
6_VDR-IQ.VSD
600
8_IQMAX-TJ.VSD
620
Vdr [mV]
VI = 13.5 V
IQ [mA]
Tj = 150 °C
400
580
Tj = 25 °C
300
200
560
540
Tj = -40 °C
520
100
0
100
200
500
-40 -20
300
0
20 40 60 80 100 120 140
Tj [°C]
IQ [mA]
Dropout Voltage Vdr versus Junction
Temperature Tj
Maximum Output Current IQ versus
Input Voltage VI
7_VDR-TJ.VSD
600
9_SOA.VSD
600
Tj = 125 °C
IQ [mA]
Vdr [mV]
IQlim
Tj = 25 °C
IQ = 250 mA
400
300
400
300
IQ = 150mA
200
200
Pvmax = 1,18W for TO252 @
300mm2 cooling area
100
100
IQ = 10 mA
-40 -20
0
20 40 60 80 100 120 140
0
Tj [°C]
Data Sheet
10
20
30
40
VI [V]
11
Rev. 1.11, 2010-11-22
TLE 7276
Region of Stability
Output Voltage VQ Start-up behaviour
14_VItime_startup.vsd
12_ESR-IQ.VSD
100
CQ = 10nF ...10 µF
Tj = 25 °C
ESRCQ
[Ω]
VQ [V]
INH = ON
10
5.05
1
IQ = 5mA
5.00
Stable
Region
4.90
0.1
4.80
0.01
0
50
100
200
150
2
1
3
t [ms]
Power Supply Ripple Rejection PSRR
versus Frequency f
Load Regulation dVQ versus Output
Current Change dIQ
13_PSRR.VSD
80
5
4
IQ [mA]
18a_dVQ-dIQ_Vi6V.vsd
0
VI = 6V
ΔVQ
PSRR
[dB]
[mV]
60
IQ = 30 mA
IQ = 0.1 mA
-10
IQ = 100 mA
50
-15
Tj = 25 °C
-20
40
30
Tj = -40 °C
VRIPPLE = 1 V
VIN = 13.5 V
CQ = 10 µF Tantalum
Tj = 25 °C
10
100
1k
10k
-30
100k
0
50
100
150
250
IQ [mA]
f [Hz]
Data Sheet
Tj = 150 °C
-25
12
Rev. 1.11, 2010-11-22
TLE 7276
Load Regulation dVQ versus Output
Current Change dIQ
Line Regulation dVQ versus Input
Voltage ChangedVI
18b_dVQ-dIQ_Vi135V.vsd
0
VI = 13.5V
ΔVQ
19_dVQ-dVI__150C.vsd
0
ΔVQ
[mV]
IQ = 1mA
[mV]
-10
IQ = 10mA
Tj =150 °C
IQ = 100mA
-2
-15
-3
Tj = -40 °C
Tj = 25 °C
-20
-4
IQ = 200mA
-25
-5
Tj = 150 °C
-30
0
50
100
150
-6
250
0
5
10 15 20 25 30 35 40 45
IQ [mA]
VI [V]
Load Regulation dVQ versus Output
Current Change dIQ
Line Regulation dVQ versus Input
Voltage ChangedVI
18c_dVQ-dIQ_Vi28V.vsd
0
VI = 28
ΔVQ
19_dVQ-dVI_25C.vsd
0
Tj = 25 °C
ΔVQ
[mV]
[mV]
IQ = 1mA
-2
-10
IQ = 10mA
IQ = 200mA
IQ = 100mA
-3
-15
Tj = -40 °C
-20
-4
Tj = 25 °C
-25
-5
Tj = 150 °C
-30
0
50
100
150
-6
250
IQ [mA]
Data Sheet
0
5
10 15 20 25 30 35 40 45
VI [V]
13
Rev. 1.11, 2010-11-22
TLE 7276
Line Regulation dVQ versus Input
Voltage ChangedVI
Load Transient Response Peak Voltage
dVQ
19_dVQ-dVI_-40C.vsd
0
Tj =40 °C
ΔVQ
20_Load Trancient vs time 125.vsd
[mV]
IQ1:100mA
IQ = 1mA
-2
Tj=125°C
Vi=13.5V
IQ = 10mA
IQ = 100mA
-3
IQ = 200mA
-4
VQ
-5
-6
0
5
T=40µs/DIV
10 15 20 25 30 35 40 45
VQ=100mV/DIV
VI [V]
Load Transient Response Peak Voltage
dVQ
Line Transient Response Peak Voltage
dVQ
20_Load Trancient vs time 25.vsd
IQ1:100mA
21_Line Trancient vs time 25.vsd
Tj=25°C
Vi=13.5V
dVI 2V
Tj=25°C
Vi=13.5V
VQ
VQ
T=40µs/DIV
Data Sheet
VQ=100mV/DIV
T=400µs/DIV
14
VQ=50mV/DIV
Rev. 1.11, 2010-11-22
TLE 7276
Line Transient Response Peak Voltage
dVQ
Inhibit Input Current IINH versus Input
Voltage VI, INH=Off
25_IINH vs VIN INH_off.vsd
IINH
21_Line Trancient vs time 125.vsd
[µA]
1.0
Tj=125°C
Vi=13.5V
dVI 2V
INH = OFF
Tj = 150°C
Tj = 25°C
0.8
Tj = -40°C
0.6
VQ
0.4
0.2
T=400µs/DIV
VQ=50mV/DIV
10
20
30
40
VIN [V]
Inhibit Input Current IINH versus Inhibit
Input Voltage VINH
Thermal Resistance Junction-Ambient
RTHJA versus Power Dissipation PV
24_IINH vs VINH.vsd
IINH
[µA]
50
32_RTH VS PV TO252.VSD
75
A = 300mm2
RTH-JA
Cooling Area single sided PCB
[K/W]
Tj = 150°C
Tj = 25°C
40
TO252-3
65
Tj = -40°C
30
60
20
55
10
50
TO252-5
10
20
30
40
3
VINH [V]
Data Sheet
6
9
12
PV [W]
15
Rev. 1.11, 2010-11-22
TLE 7276
Package Outlines
2.3 +0.05
-0.10
A
1 ±0.1
0...0.15
0.5 +0.08
-0.04
5x0.6 ±0.1
1.14
4.56
0.9 +0.08
-0.04
0.51 min
0.15 max
per side
B
5.4 ±0.1
0.8 ±0.15
(4.17)
9.9 ±0.5
6.22 -0.2
1 ±0.1
6.5 +0.15
-0.10
0.1
0.25
M
A B
GPT09161
All metal surfaces tin plated, except area of cut.
Figure 4
Data Sheet
P-TO252-5-1 (Plastic Transistor Single Outline)
16
Rev. 1.11, 2010-11-22
TLE 7276
6.5 +0.15
-0.05
A
1)
2.3 +0.05
-0.10
0.5 +0.08
-0.04
0.9 +0.20
-0.01
0...0.15
0.51 MIN.
0.15 MAX.
per side
B
(5)
0.8 ±0.15
(4.24) 1 ±0.1
9.98 ±0.5
6.22 -0.2
5.7 MAX.
0.5 +0.08
-0.04
5 x 0.6 ±0.1
1.14
4.56
0.1 B
0.25 M A B
1) Includes mold flashes on each side.
All metal surfaces tin plated, except area of cut.
Figure 5
P-TO252-5-11 (Plastic Transistor Single Outline)
2.2
10.6
6.4
5.8
0.8
5.36
Figure 6
Data Sheet
Foot Print for P-TO-252-5-1 and P-TO-252-5-11 (Plastic Transistor
Single Outline)
17
Rev. 1.11, 2010-11-22
TLE 7276
4.4
10 ±0.2
1.27 ±0.1
A
8.5 1)
B
0.05
2.4
0.1
2.7 ±0.3
4.7 ±0.5
7.55 1)
9.25 ±0.2
(15)
1±0.3
0...0.3
0...0.15
5 x 0.8 ±0.1
0.5 ±0.1
4 x 1.7
0.25
M
A B
8˚ MAX.
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
Figure 7
0.1 B
GPT09113
P-TO263-5-1 (Plastic Transistor Single Outline)
4.6
16.15
9.4
10.8
0.6
1.1
7.9
Figure 8
Foot Print for P-TO263-5-1 (Plastic Transistor Single Outline)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Data Sheet
18
Dimensions in mm
Rev. 1.11, 2010-11-22
TLE 7276
Remarks
TLE 7276 D
5-V Low Drop Voltage Regulator
Revision History:
2010-11-22
Previous Version:
Rev. 1.11
1.1
Page
Subjects (major changes since last revision)
4
Pin configuration: Typo corrected (No change of product, process or test)
all
New Infineon-Layout and Cover added
Data Sheet
19
Rev. 1.11, 2010-11-22
Edition 2010-11-22
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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