INFINEON IFX1117GSV33

Voltage Regulator
IFX 1117
Data Sheet
Features
•
•
•
•
•
•
•
Output voltage 3.3 V or adjustable
1.0 A output current
Low drop voltage < 1.2 V @ 800 mA
Short circuit protected
Overtemperature protected
Operating range up to 15 V
Industrial type
P-SOT223-4
Functional Description
The IFX 1117 is a monolithic integrated fixed NPN type voltage regulator that can supply
loads up to 1.0 A. The device is housed in the small surface mounted SOT223 package.
The IC is equipped with additional protection against overload, short circuit and
overtemperature.
The IFX 1117 GSV33 supplies a regulated output voltage of 3.3 V (±2%). The
IFX 1117 GSV supplies an output voltage with ±2% precision adjustable via an external
voltage divider. The input voltage for the IFX 1117 GSV33 ranges from 4.5 V (= VQ+VDR)
to 15 V for a load current of 800 mA, for the maximum load current of 1.0 A a minimum
input voltage of 4.7 V is required. The drop voltage VDR ranges from 1.1 V to 1.4 V
depending on the load current level.
The device operates in the temperature range of Tj = 0 to 125 °C.
Type
Ordering Code
Package
IFX 1117 GSV33
Q67006-A9681
P-SOT223-4-6
P-SOT223-4-4
IFX 1117 GSV
Q67006-A9680
P-SOT223-4-6
P-SOT223-4-4
Data Sheet
1
Rev. 1.1, 2004-07-20
IFX 1117
I
Q
Control
with
Overtemperature
Protection;
Overcurrent
Protection
Internal
Reference
GND
AES02840
Figure 1
Data Sheet
Block Diagram for Fixed Output Voltage IFX 1117 GSV33
2
Rev. 1.1, 2004-07-20
IFX 1117
SOT223
Q
4
1
2
3
GND
Q
I
AEP02868_1117_01
Figure 2
Pin Configuration IFX 1117 GSV33 (top view)
Table 1
Pin Definitions and Functions IFX 1117 GSV33
Pin No.
Symbol Function
1
GND
Ground
2
Q
Output; Connect output pin to GND via a capacitor CQ ≥ 10 µF
with ESR ≤ 20 Ω (see also graph “Region of Stability”)
3
I
Input
4 (Heatsink)
Q
Output; Connect to pin 2
Data Sheet
3
Rev. 1.1, 2004-07-20
IFX 1117
SOT223
Q
4
1
2
3
ADJ
Q
I
AEP02868_1117_02
Figure 3
Pin Configuration IFX 1117 GSV (top view)
Table 2
Pin Definitions and Functions IFX 1117 GSV
Pin No.
Symbol Function
1
ADJ
Adjust; defines output voltage level by external voltage divider
between Q, ADJ and GND.
2
Q
Output; Connect output pin to GND via a capacitor CQ ≥ 10 µF
with ESR ≤ 20 Ω (see also graph “Region of Stability”).
3
I
Input
4 (Heatsink)
Q
Output; Connect to pin 2
Data Sheet
4
Rev. 1.1, 2004-07-20
IFX 1117
Table 3
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Min.
Unit
Test Condition
Max.
Input - Output Voltage Difference (variable device only)
VI - VQ
Voltage
-0.3
20
V
–
Input Voltage (fixed voltage version only)
Voltage
VI
-0.3
20
V
–
VQ
IQ
-0.3
20
V
–
–
–
–
Internally limited
VESD
-2
2
kV
Human Body Model
-50
150
°C
–
-40
150
°C
–
Output
Voltage
Current
ESD Rating
Electrostatic
discharge voltage
Temperature
Tstg
Junction temperature Tj
Storage temperature
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 4
Operating Range
Parameter
Symbol
Limit Values
Unit
Remarks
VQ + VDR 15
V
–
0
125
°C
–
–
164
K/W
P-SOT223, no airflow,
no heat sink area
–
81
K/W
P-SOT223
300 mm2 heat sink area
–
4
K/W
–
Min.
VI
Junction temperature Tj
Input Voltage
Table 5
Max.
Thermal Resistance
Junction ambient
Junction case
Rthja
Rthjc
Note: In the operating range, the functions given in the circuit description are fulfilled.
Data Sheet
5
Rev. 1.1, 2004-07-20
IFX 1117
Characteristics 3.3 V Fixed Output Voltage Device IFX 1117 GSV33
0 °C < Tj < 125 °C; VI = 5 V, IQ = 10 mA; unless otherwise specified.
Parameter
Symbol
Limit Values
min. typ.
Unit
Measuring Conditions
max.
Output voltage
VQ
3.23
5
3.300 3.36
5
V
0 mA ≤ IQ ≤ 800 mA
4.7 V ≤ VI ≤ 10 V
Output voltage
VQ
–
3.300 –
V
0 mA ≤ IQ ≤ 1000 mA;
4.7 V ≤ VI ≤ 15V
Line regulation
∆VQ
–
1
6
mV
4.7 V ≤ VI ≤ 15V
Load regulation
∆VQ
–
1
10
mV
0 mA ≤ IQ ≤ 800 mA;1)
–
2
–
mV
0 mA ≤ IQ ≤ 1.0 A1)
VDR
Drop voltage
VDR
Drop voltage
VDR
Drop voltage
VDR
Current consumption; Iq
Iq = II – IQ
Temperature stability ∆VQ
–
1.00
1.10
V
–
1.05
1.15
V
–
1.10
1.20
V
–
1.30
1.40
V
–
5
10
mA
IQ = 100 mA2)
IQ = 500 mA2)
IQ = 800 mA2)
IQ = 1.0 A2)
IQ = 10 mA
–
16.5
–
mV
3)
Long Term Stability
–
–
0.3
–
%
3)
Current limit
IQmax
1100 –
2250 mA
RMS Output Noise
–
–
30
–
ppm
Power Supply Ripple
Rejection
PSRR
60
65
–
dB
Drop voltage
VQ = 0.5 V
ppm of VQ, Tj = 25 °C
10 Hz ≤ f ≤ 10 kHz3)
fr = 120 Hz, Vr = 1 VPP3)
1) Measured at constant junction temperature
2) Drop voltage measured when the output voltage has dropped 100 mV from the nominal value
obtained at VI = 5.0 V.
3) Specified by design; not subject to production test.
Data Sheet
6
Rev. 1.1, 2004-07-20
IFX 1117
Characteristics Adjustable Output Voltage Device IFX 1117 GSV
0 °C < Tj < 125 °C; VI = 5 V, IQ = 10 mA; unless otherwise specified.
Parameter
Symbol
Limit Values
min. typ.
Unit
Measuring Conditions
max.
Reference voltage
VQ
1.22
5
1.250 1.27
0
V
10 mA ≤ IQ ≤ 800 mA;
1.4 V ≤ (VI-VQ) ≤ 10 V
Output voltage
VQ
–
1.250 –
V
10 mA ≤ IQ ≤ 1000 mA;
2.65 V ≤ VI ≤ 15 V
Line regulation
∆VQ
–
0.035 0.2
%1)
1.5 V ≤(VI-VQ)≤ 13.75 V
Load regulation
∆VQ
–
0.2
0.4
%1)
10 mA ≤ IQ ≤ 800 mA;2)
–
0.25
–
%1)
10 mA ≤ IQ ≤ 1.0 A 2)
VDR
VDR
VDR
VDR
Iq
–
1.00
1.10
V
–
1.05
1.15
V
–
1.10
1.20
V
–
1.30
1.40
V
–
1.7
5.0
mA
IQ = 100 mA 3)
IQ = 500 mA 3)
IQ = 800 mA 3)
IQ = 1.0 A 3)
VI = 15 V
IADJ
∆IADJ
–
100
120
µA
–
2
5
µA
IQ = 10 mA
1.4 V ≤(VI-VQ)≤ 13.6 V;
10 mA ≤ IQ ≤ 800 mA
Temperature stability
∆VQ
–
0.5
–
%1)
5)
Long Term Stability
–
–
0.3
–
%1)
5)
Current limit
IQmax
1100 –
2250 mA
RMS Output Noise
–
–
30
–
ppm
Power Supply Ripple
Rejection
PSRR
65
70
–
dB
Drop voltage
Drop voltage
Drop voltage
Drop voltage
Minimum Load
Current 4)
Adjust Current
Adjust Current
Change
VQ = 0.5 V
ppm of VQ, Tj = 25 °C
10 Hz ≤ f ≤ 10 kHz 5)
fr = 120 Hz, Vr = 1 VPP 5)
1) Related to VQ
2) Measured at constant junction temperature
3) Drop voltage measured when the output voltage has dropped 100 mV from the nominal value
obtained at VI = 5.0 V.
4) Minimum load current required to maintain regulation
5) Specified by design; not subject to production test.
Data Sheet
7
Rev. 1.1, 2004-07-20
IFX 1117
IFX 1117 GSV 33
II
VI
CI
I 3
2
IQ
Q
CQ
100 nF
VQ
1
GND
IGND
AES02937_1117
Figure 4
Measuring Circuit
Application Information
IFX 1117 GSV 33
I
VI
CI1
3
2
Q
CI2
VQ
CQ2
1
GND
AES02816_1117
Figure 5
Data Sheet
Typical Application Circuit IFX 1117 GSV33
8
Rev. 1.1, 2004-07-20
IFX 1117
Output
The IFX 1117 requires a 10 µF output capacitor with ESR ≤ 20 Ω for the stability of the
regulation loop. The use of a tantalum output capacitor is recommended.
For the adjustable device IFX 1117 GSV the output voltage level can be defined by a
voltage divider between Q, ADJ and GND.
The output voltage calculates:
R
V Q = V REF ×  1 + -----2- + I ADJ × R 2
R1
(1)
At the input of the regulator a capacitor is recommended to compensate line influences.
As a minimum a 100 nF ceramic input capacitor should be used. If the regulator is used
in an environment with long input lines an input capacitance of 10 µF is suggested.
IFX 1117 GSV
I
VI
CI1
3
2
Q
CI2
VQ
CQ2
R1
1
ADJ
VQ - VADJ = VREF
IADJ
R2
CADJ
AES02815_1117
Figure 6
Data Sheet
Typical Application Circuit IFX 1117 GSV
9
Rev. 1.1, 2004-07-20
IFX 1117
Typical Performance Characteristics
Output Voltage VQ versus
Junction Temperature T j
Dropout Voltage Vdr versus
Output Current IQ
VQ-TJ.VSD
VDR-IQ.VSD
1300
∆V Q [%]
Vdr [mV]
1.0
1100
I Q = 10 mA
T j = 25 °C
0.0
1000
Tj = 125 °C
-1.0
900
-2.0
800
0
25
50
75
100
125
150
0
400
200
600
Tj [°C]
800
I Q [mA]
Dropout Voltage Vdr versus
Junction Temperature Tj
Maximum Output Current IQ versus
Junction Temperature Tj
VDR-TJ.VSD
1300
IQMAX-TJ.VSD
2.2
I Q [A]
Vdr [mV]
1100
VQ = 0.5 V
1.8
I Q = 800 mA
I Q = 500 mA
1000
1.6
I Q = 100 mA
900
1.4
800
1.2
0
25
50
75
100
125
1.0
150
0
T j [°C]
Data Sheet
10
25
50
75
100
125 150
T j [°C]
Rev. 1.1, 2004-07-20
IFX 1117
Typical Performance Characteristics
Adjust Pin Current IADJ versus
Junction Temperature Tj
Power Supply Ripple Rejection PSRR
versus Frequency f
IADJ.VSD
PSRR.VSD
80
IFX1117GSV
VI = 5 V
PSRR
[dB]
I A DJ [µA]
88
60
84
50
80
40
76
30
0
25
50
75
100
IFX1117
GSV33
VI = 8 V
VRIP P LE = 1 V
I Q = 10 mA
CQ = 10 µF Tantalum
10
125
T j [°C]
IFX1117
GSV33
VI = 5 V
100
10k
1k
100k
f [Hz]
Region of Stability Version GSV33
Region of Stability Version GSV
V_ESR-IQ.VSD
V33_ESR-IQ.VSD
ESR CQ
[Ω ]
ESR CQ
[Ω ]
C Q = 10 µF
10
Stable
Region
1
C Q = 10 µF
10
Stable
Region
1
T j = 125 °C
0.1
0.1
T j = 125 °C
T j = 25°C
T j = 25°C
0.01
0
40
80
120
0.01
160
40
80
120
160
I Q [mA]
I Q [mA]
Data Sheet
0
11
Rev. 1.1, 2004-07-20
IFX 1117
Typical Performance Characteristics
Load Transient Response
Version GSV33
Line Transient Response
Version GSV33
V33_dVQ-dIQ.vsd
V33_dVQ-dVI.vsd
∆ VQ
∆ VQ
50
50
0
0
[mV]
[mV]
-50
-50
VI = 5 V
CQ = 10 µF Tantalum
-100
IQ = 100 mA
CQ = 10 µF Tantalum
Ι Q [A]
VI [V]
0.6
5.75
0.1
4.75
0
20
40
60
80
0
20
40
60
t [µs]
80
t [µs]
Load Transient Response
Version GSV
Line Transient Response
Version GSV
V_dVQ-dIQ.vsd
V_dVQ-dVI.vsd
∆ VQ
∆ VQ
3
3
0
0
-3
-3
[%]
[%]
V I - VQ = 3 V
CQ = 10 µF Tantalum
-6
-6
I Q = 100 mA
C Q = 10 µF Tantalum
VI - VQ
[V]
Ι Q [A]
0.6
3.5
0.1
2.5
0
20
40
60
0
80
t [µs]
Data Sheet
20
40
60
80
t [µs]
12
Rev. 1.1, 2004-07-20
IFX 1117
Package Outlines
1.6 ±0.1
6.5 ±0.2
0.1 MAX.
2
B
0.5 MIN.
1
+0.2
acc. to
DIN 6784
3.5 ±0.2
4
7 ±0.3
3 ±0.1
15˚ MAX.
A
3
0.28 ±0.04
2.3
0.7 ±0.1
4.6
0.25
M
A
0.25
M
B
GPS05560
Figure 7
P-SOT223-4-6, P-SOT223-4-4 (Plastic Small Outline Transistor)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Data Sheet
13
Rev. 1.1, 2004-07-20
IFX 1117
Revision History
Version
Date
Changes
Rev. 1.0
2004-06-01
Final Data Sheet
Rev. 1.1
2004-07-20
“Typical Performance Characteristics” graphs added.
Data Sheet
14
2004-07-20
Edition 2004-07-20
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as a guarantee of
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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question please contact your nearest Infineon Technologies Office.
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