IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G $(*'#$%TM3 Power-Transistor Product Summary Features 9 # (!,,% * ,-0+ !**% 4% * 9 6# % **% ,2'!2% # (!0'% 6 R DS(on) product (FOM) VDS 250 V RDS(on),max 20 m# ID 64 A 9 % 07*-5 -,0% 1)12!,# % R DS(on) 9 8 -. % 0!2),' 2% + . % 0!23 0% 9 " &0% % *% !$ . *!2),' - # -+ . *)!,2 9 3 !*)&)% $ !# # -0$ ),' 2- 1) for target application 9 !*-'% ,&0% % !# # -0$ ),' 2- 9$ % !*&-0()'(&0% /3 % ,# 715)2# (),' !,$ 17,# (0-,-3 1 0% # 2)&)# !2)-, Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package PG-TO263-3 PG-TO220-3 PG-TO262-3 Marking 200N25N 200N25N 200N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 64 T C=100 °C 46 Unit A Pulsed drain current2) I D,pulse T C=25 °C 256 Avalanche energy, single pulse E AS I D=47 A, R GS=25 # 320 mJ Gate source voltage V GS ±20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.3 page 1 2010-10-19 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area3) - - 40 250 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 4 Zero gate voltage drain current I DSS V DS=200 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=200 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=64 A - 17.5 20 m# Gate resistance RG - 2.4 - # Transconductance g fs 61 122 - S |V DS|>2|I D|R DS(on)max, I D=64 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2010-10-19 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 5340 7100 - 297 395 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=100 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss - 4 - Turn-on delay time t d(on) - 18 - Rise time tr - 20 - Turn-off delay time t d(off) - 45 - Fall time tf - 12 - Gate to source charge Q gs - 22 - Gate to drain charge Q gd - 7 - - 13 - V DD=100 V, V GS=10 V, I D=25 A, R G=1.6 # pF ns Gate Charge Characteristics4) V DD=100 V, I D=25 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 64 86 Gate plateau voltage V plateau - 4.2 - Output charge Q oss - 135 179 nC - - 64 A - - 256 - 1 1.2 V - 170 - ns - 780 - nC V DD=100 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=64 A, T j=25 °C V R=100 V, I F=25 A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.3 page 3 2010-10-19 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS: 320 70 280 60 240 50 40 ID [A] Ptot [W] 200 160 30 120 20 80 10 40 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs 10 µs 102 100 µs ZthJC [K/W] 0.5 ID [A] 1 ms 101 10 ms 10-1 0.2 0.1 DC 0.05 100 0.02 0.01 single pulse 10-1 10-2 10-1 100 101 102 103 VDS [V] Rev. 2.3 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2010-10-19 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 150 30 10 V 7V 125 25 4.5 V 5V 5V 20 RDS(on) [mW] ID [A] 100 75 4.5 V 50 7V 10 V 15 10 25 5 0 0 0 1 2 3 4 5 0 20 40 60 VDS [V] 80 100 120 140 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 140 180 160 120 140 100 120 ID [A] gfs [S] 80 60 100 80 60 40 40 175 °C 20 20 25 °C 0 0 0 2 4 6 8 VGS [V] Rev. 2.3 0 25 50 75 100 125 ID [A] page 5 2010-10-19 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=64 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 70 4 3.5 60 2700 µA 3 50 270 µA 40 30 VGS(th) [V] RDS(on) [mW] 2.5 98% 2 1.5 typ 20 1 10 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 Coss 175 °C IF [A] C [pF] 102 102 25°C, 98% 175°C, 98% 101 25 °C Crss 101 100 0 40 80 120 160 VDS [V] Rev. 2.3 0 0.5 1 1.5 2 VSD [V] page 6 2010-10-19 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 # V GS=f(Q gate); I D=25 A pulsed parameter: T j(start) parameter: V DD 10 8 200 V 125 V VGS [V] 6 50 V 4 2 0 0 20 40 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 290 280 VBR(DSS) [V] 270 260 250 240 230 220 -60 -20 20 60 Tj [°C] 100 140 180 60 80 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G PG-TO220-3: Outline Rev. 2.3 page 8 2010-10-19 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G PG-TO263-3: Outline Rev. 2.3 page 9 2010-10-19 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G PG-TO262-3: Outline Rev. 2.3 page 10 2010-10-19 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G ( % )-&.1, ! 3).- ' )5% - )- 3 ( )2 $ .# 4 , % -32( ! ++)- -. % 5% -3" % 1% ' ! 1$ % $ ! 2 ! 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