SPD30N03S2L-20 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS(on) 20 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG- TO252 -3 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package SPD30N03S2L-20G PG- TO252 -3 Marking 2N03L20 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A 30 TC=25°C 30 Pulsed drain current ID puls 120 TC=25°C EAS 70 Repetitive avalanche energy, limited by Tjmax 2) EAR 6 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 60 W -55... +175 °C Avalanche energy, single pulse mJ ID=30 A , V DD=25V, RGS=25Ω kV/µs IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 02-09-2008 SPD30N03S2L-20 G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1.7 2.5 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=23µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 22.9 31 mΩ RDS(on) - 15.5 20 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=18A Drain-source on-state resistance V GS=10V, I D=18A 1Current limited by bondwire ; with an RthJC = 2.5K/W the chip is able to carry ID= 43A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 02-09-2008 SPD30N03S2L-20 G Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 14 28 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, ID =30A Input capacitance Ciss VGS =0V, VDS =25V, - 530 700 Output capacitance Coss f=1MHz - 200 275 Reverse transfer capacitance Crss - 60 90 Turn-on delay time td(on) VDD =15V, VGS =10V, - 6 9 Rise time tr ID =30A, - 11 17 Turn-off delay time td(off) RG =12.7Ω - 20 30 Fall time tf - 17 26 - 1.7 2.2 - 4.9 7.4 - 14.3 19 V(plateau) VDD =24V, ID =30A - 3.2 - V IS - - 30 A - - 120 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =30A VDD =24V, ID =30A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=30A - 1.1 1.4 V Reverse recovery time trr V R=-V, IF=lS, - 15 18 ns Reverse recovery charge Qrr diF/dt=100A/µs - 2 3 nC Page 3 02-09-2008 SPD30N03S2L-20 G 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 4 V parameter: VGS≥ 10 V SPD30N03S2L-20 65 SPD30N03S2L-20 32 W A 55 24 45 ID P tot 50 40 20 35 16 30 25 12 20 8 15 10 4 5 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPD30N03S2L-20 10 1 SPD30N03S2L-20 K/W A 10 0 2 V DS /I ID D 10 Z thJC t = 35.0µs p 10 -1 10 -2 DS (on ) = 100 µs R D = 0.50 10 0.20 1 0.10 0.05 1 ms 10 0.02 -3 0.01 single pulse 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 02-09-2008 0 SPD30N03S2L-20 G 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPD30N03S2L-20 75 mΩ V [V] GS a h gf 60 55 e ID 50 45 d c d e 55 3.0 b 3.5 c 4.0 d 4.5 e 5.0 f 6.0 40 g 7.0 35 h 10.0 50 R DS(on) A SPD30N03S2L-20 65 Ptot = 60W 45 40 35 30 30 25 25 20 f 20 c h 15 g 15 10 10 b VGS [V] = c 4.0 5 5 d 4.5 e 5.0 f 6.0 g h 7.0 10.0 a 0 0 0.5 1 1.5 2 2.5 3 3.5 0 V 4 5 0 10 20 30 40 A 60 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 60 30 A S 50 40 g fs ID 45 20 35 30 15 25 20 10 15 10 5 5 0 0 1 2 3 4 V 0 5.5 0 5 10 15 20 A 30 ID VGS Page 5 02-09-2008 SPD30N03S2L-20 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 18 A, VGS = 10 V parameter: VGS = VDS SPD30N03S2L-20 50 3 mΩ V V GS(th) R DS(on) 40 35 30 25 373µA 2 1.5 98% 20 1 typ 15 23µA 10 0.5 5 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 pF A 3 10 2 10 1 IF Ciss C 10 3 SPD30N03S2L-20 Coss 10 2 Crss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 1 0 10 5 10 15 20 V 30 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 02-09-2008 SPD30N03S2L-20 G 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 30 A , V DD = 25 V, R GS = 25 Ω parameter: ID = 30 A pulsed 70 SPD30N03S2L-20 16 V mJ 12 VGS E AS 50 10 0,2 VDS max 40 0,8 VDS max 8 30 6 20 4 10 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 2 4 6 8 10 12 14 16 18nC 21 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD30N03S2L-20 V(BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 02-09-2008 SPD30N03S2L-20 G Package outline: PG-TO252-3 Page 8 02-09-2008 SPD30N03S2L-20 G Page 9 02-09-2008