IPD90N06S3L-07 OptiMOS®-T Power-Transistor Product Summary V DS 55 V R DS(on),max 7.4 mΩ ID 90 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD90N06S3L-07 PG-TO252-3-11 QN06L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 90 Unit A 64 Pulsed drain current1) I D,pulse T C=25 °C 360 Avalanche energy, single pulse1) E AS I D=45 A 210 mJ Avalanche current, single pulse I AS 90 A Gate source voltage2) V GS ±16 V Power dissipation P tot 107 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.1 55/175/56 page 1 2009-05-20 IPD90N06S3L-07 Parameter Symbol Values Conditions Unit min. typ. max. - - 1.4 minimal footprint - - 62 6 cm2 cooling area3) - - 40 Thermal characteristics1) Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=55 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=5 V, I D=29 A - 11.0 13.7 mΩ V GS=10 V, I D=43 A - 6.0 7.4 Rev. 1.1 page 2 2009-05-20 IPD90N06S3L-07 Parameter Symbol Values Conditions Unit min. typ. max. - 6500 7480 - 810 1220 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 780 1170 Turn-on delay time t d(on) - 17 - Rise time tr - 42 - Turn-off delay time t d(off) - 43 - Fall time tf - 44 - Gate to source charge Q gs - 32 42 Gate to drain charge Q gd - 19 28 Gate charge total Qg - 90 110 Gate plateau voltage V plateau - 4.8 - V - - 90 A - - 360 0.6 0.9 1.3 V - 40 - ns - 50 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=80 A, R G=5.1 Ω pF ns Gate Charge Characteristics1) V DD=11 V, I D=50 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD Reverse recovery time1) t rr Reverse recovery charge1) Q rr 1) 2) T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=27.5 V, I F=50A, di F/dt =100 A/µs Defined by design. Not subject to production test. Qualified at -5V and +16V. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2009-05-20 IPD90N06S3L-07 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 4 V I D = f(T C); V GS ≥ 4 V 120 100 100 80 80 I D [A] P tot [W] 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 10 µs 0.5 100 Z thJC [K/W] 100 µs I D [A] 1 ms 0.1 10-1 0.05 0.01 10 10-2 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.1 10-7 page 4 2009-05-20 IPD90N06S3L-07 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 20 200 4V 10 V 5V 18 175 6V 16 6V 150 14 I D [A] 100 R DS(on) [mΩ] 5.5 V 125 5V 75 12 10 8V 8 10 V 4.5 V 6 50 25 4V 4 3.5 V 2 0 0 0 2 4 6 8 0 10 20 40 60 80 100 120 140 160 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 4 V R DS(on) = f(T j); I D = 43 A; V GS = 10 V parameter: T j 160 12 140 -55 °C 120 10 25 °C R DS(on) [mΩ] 100 I D [A] 175 °C 80 60 40 8 6 20 0 4 0 1 2 3 4 5 6 V GS [V] Rev. 1.1 -60 -20 20 60 100 140 180 T j [°C] page 5 2009-05-20 IPD90N06S3L-07 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 4 3 Ciss 10 2.5 Coss Crss 600µA C [pF] V GS(th) [V] 2 1.5 60µA 103 1 0.5 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AV = f(t AV) parameter: T j parameter: T j(start) 100 103 25°C 100°C 150°C I F [A] I AV [A] 102 175 °C 25 °C 0.6 0.8 10 1 10 100 1 0 0.2 0.4 1 1.2 1.4 V SD [V] Rev. 1.1 0.1 1 10 100 1000 t AV [µs] page 6 2009-05-20 IPD90N06S3L-07 13 Typical avalanche Energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 65 500 22.5 A 400 60 V BR(DSS) [V] E AS [mJ] 300 45 A 200 50 90 A 100 55 45 0 0 50 100 150 -60 200 -20 T j [°C] 20 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 50 A pulsed parameter: V DD 12 V GS 11 V Qg 44 V 10 V GS [V] 8 V plateau 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 50 100 Q gate Q gd 150 Q gate [nC] Rev. 1.1 page 7 2009-05-20 IPD90N06S3L-07 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2009 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2009-05-20 IPD90N06S3L-07 Revision History Version Date Changes Data Sheet version 1.1 Correction of marking and update 15.06.2009 of disclaimer Data Sheet version 1.1 15.06.2009 Correction of package name Rev. 1.1 page 9 2009-05-20