IPD50N06S3-09 OptiMOS®-T Power-Transistor Product Summary V DS 55 V R DS(on),max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD50N06S3-09 PG-TO252-3-11 3N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 50 Unit A 50 Pulsed drain current2) I D,pulse T C=25 °C 200 Avalanche energy, single pulse2) E AS I D=25 A 370 mJ Avalanche current, single pulse I AS 50 A Gate source voltage3) V GS ±20 V Power dissipation P tot 107 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.1 55/175/56 page 1 2009-05-20 IPD50N06S3-09 Parameter Symbol Values Conditions Unit min. typ. max. - - 1.4 minimal footprint - - 62 6 cm2 cooling area4) - - 40 Thermal characteristics2) Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=55 µA 2.1 3.0 4 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=43 A - 8.0 9 mΩ Rev. 1.1 page 2 2009-05-20 IPD50N06S3-09 Parameter Symbol Values Conditions Unit min. typ. max. - 5340 6140 - 810 1220 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 780 1170 Turn-on delay time t d(on) - 23 - Rise time tr - 42 - Turn-off delay time t d(off) - 26 - Fall time tf - 37 - Gate to source charge Q gs - 34 45 Gate to drain charge Q gd - 20 30 Gate charge total Qg - 77 90 Gate plateau voltage V plateau - 6.3 - V - - 50 A - - 200 0.6 0.9 1.3 V - 40 - ns - 50 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=50 A, R G=5.1 Ω pF ns Gate Charge Characteristics2) V DD=11 V, I D=50 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=27.5 V, I F=I S, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 81 A at 25°C. For detailed information see Application Note ANPS071E. 2) Defined by design. Not subject to production test. 3) Qualified at -5V and +20V. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2009-05-20 IPD50N06S3-09 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 120 60 100 50 80 40 I D [A] P tot [W] 1 Power dissipation 60 30 40 20 20 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 0.5 10 µs 100 Z thJC [K/W] 100 µs I D [A] 1 ms 0.1 10-1 0.05 0.01 10 10-2 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.1 10-7 page 4 2009-05-20 IPD50N06S3-09 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 200 20 7V 6V 8V 10 V 175 150 15 8V R DS(on) [mΩ] I D [A] 125 7.5 V 100 7V 75 9V 10 6.5 V 50 10 V 6V 25 5.5 V 0 5 0 2 4 6 8 10 0 50 V DS [V] 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6 V R DS(on) = f(T j); I D = 43 A; V GS = 10 V parameter: T j 160 16 -55 °C 140 14 25 °C 120 175 °C 12 R DS(on) [mΩ] I D [A] 100 80 60 10 8 40 6 20 0 4 0 2 4 6 8 10 V GS [V] Rev. 1.1 -60 -20 20 60 100 140 180 T j [°C] page 5 2009-05-20 IPD50N06S3-09 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 Coss 600µA 3 C [pF] V GS(th) [V] Crss 60µA 2.5 103 2 1.5 102 1 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AV = f(t AV) parameter: T j parameter: T j(start) 100 103 25°C 100°C 150°C I F [A] I AV [A] 102 101 175 °C 25 °C 0.6 0.8 100 1 0 0.2 0.4 1 1.2 1.4 V SD [V] Rev. 1.1 10 1 10 100 1000 t AV [µs] page 6 2009-05-20 IPD50N06S3-09 13 Typical avalanche Energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 65 800 12.5 A 60 V BR(DSS) [V] E AS [mJ] 600 400 25 A 55 50 200 50 A 45 0 0 50 100 150 -60 200 -20 T j [°C] 20 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 50 A pulsed parameter: V DD 12 V GS Qg 10 11 V 44 V V GS [V] 8 V plateau 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 50 100 Q gate Q gd 150 Q gate [nC] Rev. 1.1 page 7 2009-05-20 IPD50N06S3-09 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2009 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2009-05-20 IPD50N06S3-09 Revision History Version Changes Date Data Sheet version 1.1 Correction of marking and update 15.06.2009 of disclaimer Data Sheet version 1.1 15.06.2009 Correction of package name Rev. 1.1 page 9 2009-05-20