IPD90P04P4-05 OptiMOS®-P2 Power-Transistor Product Summary V DS -40 V R DS(on) 4.7 mΩ ID -90 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90P04P4-05 PG-TO252-3-313 4P0405 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) ID Conditions T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Value -90 Unit A -90 Pulsed drain current2) I D,pulse T C=25°C -360 Avalanche energy, single pulse E AS I D=-45A 60 mJ Avalanche current, single pulse I AS - -90 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 125 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-05-26 IPD90P04P4-05 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 1.2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 -40 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= -1mA Gate threshold voltage V GS(th) V DS=V GS, I D=-250µA -2.0 -3.0 -4.0 Zero gate voltage drain current I DSS V DS=-32V, V GS=0V, T j=25°C - -0.08 -1 - -20 -200 V DS=-32V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-10V, I D=-90A - 3.5 4.7 mΩ Rev. 1.0 page 2 2010-05-26 IPD90P04P4-05 Parameter Symbol Values Conditions Unit min. typ. max. - 7900 10300 pF - 2800 3600 Dynamic characteristics2) Input capacitance C iss V GS=0V, V DS=-25V, f =1MHz Output capacitance C oss Reverse transfer capacitance Crss - 76 150 Turn-on delay time t d(on) - 3 - Rise time tr - 8 - Turn-off delay time t d(off) - 7 - Fall time tf - 14 - Gate to source charge Q gs - 40 60 Gate to drain charge Q gd - 21 42 Gate charge total Qg - 118 154 Gate plateau voltage V plateau - -5.3 - V - - -90 A - - -360 - -1 -1.3 V - 56 - ns - 56 - nC V DD=-20V, V GS=-10V, I D=-90A, R G=3.5Ω ns Gate Charge Characteristics 2) V DD=-32V, I D=-90A, V GS=0 to -10V nC Reverse Diode Diode continous forward current 2) IS Diode pulse current 2) I S,pulse Diode forward voltage V SD Reverse recovery time 2) t rr Reverse recovery charge 2) Q rr T C=25°C V GS=0V, I F=-90A, T j=25°C V R=-20V, I F=-50A, di F/dt =-100A/µs 1) Current is limited by bondwire; with an R thJC = 1.2K/W the chip is able to carry -138A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2010-05-26 IPD90P04P4-05 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≤ -6V I D = f(T C); V GS ≤ -6V 140 100 120 80 60 80 -I D [A] P tot [W] 100 60 40 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 0.5 100 µs 100 -I D [A] Z thJC [K/W] 1 ms 0.1 10 -1 0.05 0.01 10 10-2 single pulse 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] -V DS [V] Rev. 1.0 10-3 10-6 page 4 2010-05-26 IPD90P04P4-05 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 360 -5V 24 10V 8V 7V 21 18 180 R DS(on) [mΩ] -I D [A] 270 -6V 6V 15 12 9 90 -7V 6 -8V 3 5V -10V 0 0 0 1 2 3 4 5 0 6 90 180 -V DS [V] 270 -I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = -6V R DS(on) = f(T j); I D = -90 A; V GS = -10 V 360 6 270 5 R DS(on) [mΩ] -I D [A] parameter: T j 180 4 3 90 175 °C -55 °C 25 °C 2 0 2 3 4 5 6 7 8 Rev. 1.0 -60 -20 20 60 100 140 180 T j [°C] -V GS [V] page 5 2010-05-26 IPD90P04P4-05 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: -I D 105 4 3.5 Ciss 104 Coss C [pF] -V GS(th) [V] 2500µA 3 250µA 103 2.5 Crss 102 2 101 1.5 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 140 180 -V DS [V] 11 Typical forward diode characteristicis 12 Drain-source breakdown voltage IF = f(VSD) VBR(DSS) = f(Tj); ID = -1 mA parameter: T j parameter: Tj(start) 45 103 44 43 42 -I F [A] -V BR(DSS) [V] 102 10 41 40 39 175 °C25 °C 1 38 37 36 100 35 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD [V] Rev. 1.0 -60 -20 20 60 100 T j [°C] page 6 2010-05-26 IPD90P04P4-05 13 Typ. gate charge 14 Gate charge waveforms V GS = f(Q gate ); I D = -90 A pulsed parameter: VDD 10 V GS 9 Qg 8 -8V -32V 7 -V GS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 20 40 60 80 100 120 Q gate [nC] Rev. 1.0 page 7 2010-05-26 IPD90P04P4-05 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2010 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2010-05-26 IPD90P04P4-05 Revision History Version Date Changes Revision 1.0 Rev. 1.0 21.05.2010 Final Data Sheet page 9 2010-05-26