INFINEON IPD90P04P4-05

IPD90P04P4-05
OptiMOS®-P2 Power-Transistor
Product Summary
V DS
-40
V
R DS(on)
4.7
mΩ
ID
-90
A
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
PG-TO252-3-313
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD90P04P4-05
PG-TO252-3-313
4P0405
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
ID
Conditions
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Value
-90
Unit
A
-90
Pulsed drain current2)
I D,pulse
T C=25°C
-360
Avalanche energy, single pulse
E AS
I D=-45A
60
mJ
Avalanche current, single pulse
I AS
-
-90
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25 °C
125
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
Rev. 1.0
page 1
2010-05-26
IPD90P04P4-05
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
1.2
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
-40
-
-
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= -1mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-250µA
-2.0
-3.0
-4.0
Zero gate voltage drain current
I DSS
V DS=-32V, V GS=0V,
T j=25°C
-
-0.08
-1
-
-20
-200
V DS=-32V, V GS=0V,
T j=125°C2)
V
µA
Gate-source leakage current
I GSS
V GS=-20V, V DS=0V
-
-
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-10V, I D=-90A
-
3.5
4.7
mΩ
Rev. 1.0
page 2
2010-05-26
IPD90P04P4-05
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
7900
10300 pF
-
2800
3600
Dynamic characteristics2)
Input capacitance
C iss
V GS=0V, V DS=-25V,
f =1MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
76
150
Turn-on delay time
t d(on)
-
3
-
Rise time
tr
-
8
-
Turn-off delay time
t d(off)
-
7
-
Fall time
tf
-
14
-
Gate to source charge
Q gs
-
40
60
Gate to drain charge
Q gd
-
21
42
Gate charge total
Qg
-
118
154
Gate plateau voltage
V plateau
-
-5.3
-
V
-
-
-90
A
-
-
-360
-
-1
-1.3
V
-
56
-
ns
-
56
-
nC
V DD=-20V,
V GS=-10V, I D=-90A,
R G=3.5Ω
ns
Gate Charge Characteristics 2)
V DD=-32V, I D=-90A,
V GS=0 to -10V
nC
Reverse Diode
Diode continous forward current 2)
IS
Diode pulse current 2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time 2)
t rr
Reverse recovery charge 2)
Q rr
T C=25°C
V GS=0V, I F=-90A,
T j=25°C
V R=-20V, I F=-50A,
di F/dt =-100A/µs
1)
Current is limited by bondwire; with an R thJC = 1.2K/W the chip is able to carry -138A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2010-05-26
IPD90P04P4-05
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≤ -6V
I D = f(T C); V GS ≤ -6V
140
100
120
80
60
80
-I D [A]
P tot [W]
100
60
40
40
20
20
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100
0.5
100 µs
100
-I D [A]
Z thJC [K/W]
1 ms
0.1
10
-1
0.05
0.01
10
10-2
single pulse
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
-V DS [V]
Rev. 1.0
10-3
10-6
page 4
2010-05-26
IPD90P04P4-05
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
360
-5V
24
10V
8V
7V
21
18
180
R DS(on) [mΩ]
-I D [A]
270
-6V
6V
15
12
9
90
-7V
6
-8V
3
5V
-10V
0
0
0
1
2
3
4
5
0
6
90
180
-V DS [V]
270
-I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = -6V
R DS(on) = f(T j); I D = -90 A; V GS = -10 V
360
6
270
5
R DS(on) [mΩ]
-I D [A]
parameter: T j
180
4
3
90
175 °C
-55 °C
25 °C
2
0
2
3
4
5
6
7
8
Rev. 1.0
-60
-20
20
60
100
140
180
T j [°C]
-V GS [V]
page 5
2010-05-26
IPD90P04P4-05
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: -I D
105
4
3.5
Ciss
104
Coss
C [pF]
-V GS(th) [V]
2500µA
3
250µA
103
2.5
Crss
102
2
101
1.5
-60
-20
20
60
100
140
0
180
5
10
T j [°C]
15
20
25
30
140
180
-V DS [V]
11 Typical forward diode characteristicis
12 Drain-source breakdown voltage
IF = f(VSD)
VBR(DSS) = f(Tj); ID = -1 mA
parameter: T j
parameter: Tj(start)
45
103
44
43
42
-I F [A]
-V BR(DSS) [V]
102
10
41
40
39
175 °C25 °C
1
38
37
36
100
35
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD [V]
Rev. 1.0
-60
-20
20
60
100
T j [°C]
page 6
2010-05-26
IPD90P04P4-05
13 Typ. gate charge
14 Gate charge waveforms
V GS = f(Q gate ); I D = -90 A pulsed
parameter: VDD
10
V GS
9
Qg
8
-8V
-32V
7
-V GS [V]
6
5
4
3
2
Q gate
1
Q gs
Q gd
0
0
20
40
60
80
100
120
Q gate [nC]
Rev. 1.0
page 7
2010-05-26
IPD90P04P4-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2010-05-26
IPD90P04P4-05
Revision History
Version
Date
Changes
Revision 1.0
Rev. 1.0
21.05.2010 Final Data Sheet
page 9
2010-05-26