IPP90R800C3 CoolMOS™ Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS(on),max @ T J= 25°C 0.8 Ω Q g,typ 42 nC • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO220 • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Type Package Marking IPP90R800C3 PG-TO220 9R800C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 6.9 T C=100 °C 4.4 Pulsed drain current2) I D,pulse T C=25 °C 15 Avalanche energy, single pulse E AS I D=1.4 A, V DD=50 V 157 Avalanche energy, repetitive t AR2),3) E AR I D=1.4 A, V DD=50 V 0.46 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T J, T stg Mounting torque Rev. 1.0 Unit A mJ 1.4 A V DS=0...400 V 50 V/ns static ±20 V AC (f>1 Hz) ±30 T C=25 °C 104 W -55 ... 150 °C M3 and M3.5 screws page 1 60 Ncm 2008-07-30 IPP90R800C3 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Symbol Conditions Value Unit 4.1 T C=25 °C A 15 4 V/ns Values Unit min. typ. max. - - 1.2 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 900 - - V K/W Electrical characteristics, at T J=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=0.46 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=900 V, V GS=0 V, T j=25 °C - - 1 V DS=900 V, V GS=0 V, T j=150 °C - 10 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=4.1 A, T j=25 °C - 0.62 0.8 Ω V GS=10 V, I D=4.1 A, T j=150 °C - 1.7 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 1.0 RG page 2 Ω 2008-07-30 IPP90R800C3 Parameter Values Symbol Conditions Unit min. typ. max. - 1100 - - 52 - - 34 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related 5) C o(er) Effective output capacitance, time related 6) C o(tr) - 130 - Turn-on delay time t d(on) - 70 - Rise time tr - 20 - Turn-off delay time t d(off) - 400 - Fall time tf - 32 - Gate to source charge Q gs - 5 - Gate to drain charge Q gd - 18 - Gate charge total Qg - 42 tbd Gate plateau voltage V plateau - 4.6 - V - 0.8 1.2 V - 360 - ns - 5.3 - µC - 24 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 500 V V DD=400 V, V GS=10 V, I D=4.1 A, R G=50 Ω ns Gate Charge Characteristics V DD=400 V, I D=4.1 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=4.1 A, T J=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T J,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤ 200 A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 50% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS. Rev. 1.0 page 3 2008-07-30 IPP90R800C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 120 limited by on-state resistance 100 1 µs 101 80 10 µs I D [A] P tot [W] 100 µs 1 ms 60 10 ms DC 100 40 20 10-1 0 0 25 50 75 100 125 1 150 10 T C [°C] 100 1000 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) I D=f(V DS); T J=25 °C parameter: D=t p/T parameter: V GS 101 20 20 V 10 V 8V 6V 15 5.5 V 100 I D [A] Z thJC [K/W] 0.5 0.2 10 5V 0.1 10-1 0.05 0.02 0.01 5 single pulse 4.5 V 4V 10 -2 10-5 0 10-4 10-3 10-2 10-1 t p [s] Rev. 1.0 0 5 10 15 20 25 V DS [V] page 4 2008-07-30 IPP90R800C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T J=150 °C R DS(on)=f(I D); T J=150 °C parameter: V GS parameter: V GS 10 10 20 V 10 V 8V 6V 8 8 5V 4.5 V I D [A] R DS(on) [Ω] 6 4 6 10 V 4 5V 4V 4.8 V 2 4.5 V 2 0 4V 0 0 5 10 15 20 25 0 2 4 6 V DS [V] 8 10 12 14 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T J); I D=4.1 A; V GS=10 V I D=f(V GS); V DS=20V parameter: T J 2.5 20 25 °C 2 15 I D [A] R DS(on) [Ω] 1.5 1 10 150 °C 98 % typ 5 0.5 0 0 -60 -20 20 60 100 140 180 T J [°C] Rev. 1.0 0 2 4 6 8 10 V GS [V] page 5 2008-07-30 IPP90R800C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=4.1 A pulsed I F=f(V SD) parameter: V DD parameter: T J 10 102 8 25 °C, 98% 150 °C, 98% 101 720 V 400 V I F [A] V GS [V] 6 25 °C 4 150 °C 100 2 10-1 0 0 10 20 30 40 0 50 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T J); I D=1.4 A; V DD=50 V V BR(DSS)=f(T J); I D=0.25 mA 160 1050 140 1000 120 V BR(DSS) [V] E AS [mJ] 100 80 60 950 900 40 850 20 0 800 25 50 75 100 125 150 T J [°C] Rev. 1.0 -60 -20 20 60 100 140 180 T J [°C] page 6 2008-07-30 IPP90R800C3 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 10000 6 5 Ciss 1000 E oss [µJ] C [pF] 4 100 Coss 3 2 10 1 Crss 1 0 0 100 200 300 400 500 600 V DS [V] Rev. 1.0 0 100 200 300 400 500 600 V DS [V] page 7 2008-07-30 IPP90R800C3 Definition of diode switching characteristics Rev. 1.0 page 8 2008-07-30 IPP90R800C3 PG-TO220 Outlines Dimensions in mm/inches Rev. 1.0 page 9 2008-07-30 IPP90R800C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 2008-07-30