BCP 54M ... BCP 56M NPN Silicon AF Transistors 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 51M...BCP 53M(PNP) 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BCP 54M BAs Q62702-C2595 1 = B BCP 55M BEs Q62702-C2606 BCP 56M BHs Q62702-C2607 2=C 3=E Package 4 n.c. 5=C SCT-595 Maximum Ratings Parameter Symbol BCP 54M BCP 55M BCP 56M Unit Collector-emitter voltage VCEO 45 60 80 Collector-base voltage VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 DC collector current IC Peak collector current I CM 1.5 A Base current IB 100 mA Peak base current I BM 200 Total power dissipation, T S ≤ 77 °C Ptot 1.7 W Junction temperature Tj 150 °C Storage temperature T stg 1 V mA -65...+150 Thermal Resistance Junction ambient 1) RthJA ≤98 Junction - soldering point RthJS ≤43 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BCP 54M ... BCP 56M Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage I C = 10 mA, I B = 0 BCP 54M 45 - - BCP 55M 60 - - BCP 56M 80 - - BCP 54M 45 - - BCP 55M 60 - - BCP 56M 100 - - V(BR)EBO 5 - - I CBO - - 100 nA I CBO - - 20 µA hFE 25 - - - hFE 40 - 250 - hFE 25 - - - VCEsat - - 0.5 V VBE(ON) - - 1 fT - 100 - Collector-base breakdown voltage I C = 100 µA, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , TA = 150 °C DC current gain 1) I C = 5 mA, V CE = 2 V DC current gain 1) I C = 150 mA, V CE = 2 V DC current gain 1) I C = 500 mA, V CE = 2 V Collector-emitter saturation voltage1) I C = 500 mA, IB = 50 mA Base-emitter voltage 1) I C = 500 mA, V CE = 2 V AC Characteristics Transition frequency MHz I C = 50 mA, V CE = 10 V, f = 100 MHz 1) Pulse test: t ≤ 300µs, D = 2% Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -11-1998 BCP 54M ... BCP 56M DC current gain hFE = f (I C) Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy VCE = 2V 10 3 2000 mW h FE BCP 54...56 EHP00268 5 1600 TS P tot 1400 10 2 100 C 25 C -50 C 1200 5 1000 TA 800 10 1 600 5 400 200 0 0 20 40 60 80 120 °C 100 10 0 0 10 150 10 1 10 2 10 3 mA 10 4 ΙC TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax / PtotDC = f (tp) 10 2 10 3 Ptotmax / PtotDC RthJS K/W 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 s 10 10 0 -6 10 0 TS Semiconductor Group Semiconductor Group - 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Au 1998-11-01 -11-1998 BCP 54M ... BCP 56M Collector cutoff current I CBO = f (T A) Transition frequency fT = f (IC) VCB = 30V VCE = 10V 10 4 Ι CBO BCP 54...56 EHP00269 nA 10 fT max 3 BCP 54...56 10 3 EHP00267 MHz 10 2 10 2 typ 10 1 5 10 0 10 -1 0 50 100 C 10 1 150 10 1 10 0 10 2 mA ΙC TA Base-emitter saturation voltage Collector-emitter saturation voltage I C = f (VBEsat), hFE = 10 IC = f (VCEsat), h FE = 10 10 4 ΙC BCP 54...56 EHP00270 10 4 ΙC mA BCP 54...56 EHP00271 mA 10 3 10 3 100 C 25 C -50 C 10 2 100 C 25 C -50 C 10 2 10 1 10 1 10 0 10 3 0 0.2 0.4 0.6 0.8 V 10 0 1.2 0.2 0.4 0.6 V 0.8 V CEsat V BEsat Semiconductor Group Semiconductor Group 0 44 Au 1998-11-01 -11-1998