INFINEON BCP72

BCP 72
PNP Silicon AF Power Transistor
Preliminary data
• For AF driver and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
Type
Marking Ordering Code Pin Configuration
Package
BCP 72
PAs
SOT-23-5
Q62702-
1=E 2=C 3=E 4=B 5=C
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
15
Collector-base voltage
VCBO
15
Emitter-base voltage
VEBO
5
DC collector current
IC
3
Peak collector current
ICM
6
Base current
IB
200
Peak base current
IBM
500
Total power dissipation, TS = 99°C
Ptot
1.7
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
A
mA
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
Junction - soldering point
RthJA
≤ 55
RthJS
≤ 30
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
Dec-04-1996
BCP 72
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 100 µA, IB = 0
V
15
-
-
15
-
-
5
-
-
VCB = 15 V, IE = 0 , TA = 25 °C
-
-
100
nA
VCB = 15 V, IE = 0 , TA = 150 °C
-
-
20
µA
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IB = 0
Base-emitter breakdown voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VEB = 4 V, IC = 0
DC current gain
nA
-
-
100
hFE
-
IC = 10 mA, VCE = 5 V
25
-
-
IC = 500 mA, VCE = 1 V
85
-
475
IC = 1 A, VCE = 2 V
50
-
-
Collector-emitter saturation voltage 1)
VCEsat
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
V
-
0.15
-
VBEsat
IC = 2 A, IB = 0.2 A
mV
-
-
1.2
AC Characteristics
Transition frequency
fT
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
MHz
-
100
-
Ccb
VCB = 10 V, f = 1 MHz
pF
-
50
-
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Dec-04-1996
BCP 72
DC current gain hFE = f (IC)
VCE = 2V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 4
10 3
mA
-
100°C
hFE
IC
25°C
10 2
10 3
-50°C
100°C
25°C
-50°C
10 2
10 1
10 1
10 0
0
10
10
1
10
2
10
3
10 0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V 0.50
V CEsat
mA
IC
Collector current IC = f (VBE)
VCE = 2V
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
IC
10 4
10 4
mA
mA
IC
10 3
10 3
-50°C
25°C
100°C
10 2
10 2
10 1
10 1
10 0
0.0
0.2
0.4
Semiconductor Group
0.6
0.8
1.0
V
1.3
V BEsat
3
10 0
0.0
-50°C
25°C
100°C
0.2
0.4
0.6
0.8
1.0
V
1.3
V BE
Dec-04-1996