BCP 72 PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 72 PAs SOT-23-5 Q62702- 1=E 2=C 3=E 4=B 5=C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 5 DC collector current IC 3 Peak collector current ICM 6 Base current IB 200 Peak base current IBM 500 Total power dissipation, TS = 99°C Ptot 1.7 W Junction temperature Tj 150 °C Storage temperature Tstg V A mA - 65 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 55 RthJS ≤ 30 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Dec-04-1996 BCP 72 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 100 µA, IB = 0 V 15 - - 15 - - 5 - - VCB = 15 V, IE = 0 , TA = 25 °C - - 100 nA VCB = 15 V, IE = 0 , TA = 150 °C - - 20 µA Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IB = 0 Base-emitter breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector cutoff current Emitter cutoff current ICBO IEBO VEB = 4 V, IC = 0 DC current gain nA - - 100 hFE - IC = 10 mA, VCE = 5 V 25 - - IC = 500 mA, VCE = 1 V 85 - 475 IC = 1 A, VCE = 2 V 50 - - Collector-emitter saturation voltage 1) VCEsat IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) V - 0.15 - VBEsat IC = 2 A, IB = 0.2 A mV - - 1.2 AC Characteristics Transition frequency fT IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance MHz - 100 - Ccb VCB = 10 V, f = 1 MHz pF - 50 - 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Dec-04-1996 BCP 72 DC current gain hFE = f (IC) VCE = 2V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 10 4 10 3 mA - 100°C hFE IC 25°C 10 2 10 3 -50°C 100°C 25°C -50°C 10 2 10 1 10 1 10 0 0 10 10 1 10 2 10 3 10 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V 0.50 V CEsat mA IC Collector current IC = f (VBE) VCE = 2V Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 IC 10 4 10 4 mA mA IC 10 3 10 3 -50°C 25°C 100°C 10 2 10 2 10 1 10 1 10 0 0.0 0.2 0.4 Semiconductor Group 0.6 0.8 1.0 V 1.3 V BEsat 3 10 0 0.0 -50°C 25°C 100°C 0.2 0.4 0.6 0.8 1.0 V 1.3 V BE Dec-04-1996