PNP Silicon AF Transistors ● ● ● ● ● BCX 69 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 (NPN) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BCX 69 BCX 69-10 BCX 69-16 BCX 69-25 – CF CG CH Q62702-C1714 Q62702-C1867 Q62702-C1868 Q62702-C1869 B SOT-89 C E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-base voltage VCB0 25 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 ˚C Ptot 1 W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient 2) Rth JA ≤ 75 Junction - soldering point Rth JS ≤ 20 A mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCX 69 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 30 mA V(BR)CE0 20 – – Collector-base breakdown voltage IC = 10 µA V(BR)CB0 25 – – Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 5 – – Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C ICB0 – – – – 100 100 nA µA Emitter cutoff current VEB = 5 V IEB0 – – 10 µA DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V hFE 50 – – 85 85 100 160 60 – 100 160 250 – 375 160 250 375 – – – 0.5 – – 0.6 – – 1 – 100 – BCX 69 BCX 69-10 BCX 69-16 BCX 69-25 IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA VCEsat Base-emitter voltage1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V VBE V – V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz 1) fT Pulse test: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 MHz BCX 69 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICB0 = f (TA) VCB = 25 V Semiconductor Group 3 BCX 69 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Collector current IC = f (VBE) VCE = 1 V DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4