BAW78.../BAW79... Silicon Switching Diodes Switching applications High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Diode reverse voltage VR 400 Peak reverse voltage VRM 400 Forward current IF 1 Peak forward current IFM 1 Surge forward current, t = 1 µs IFS 10 Total power dissipation Ptot 1 BAW79D, TS ≤ 115°C 1 Tj Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 150 A °C -65 ... 150 Value Unit K/W BAW78D ≤ 25 BAW79D ≤ 35 1 V W BAW78D, TS ≤ 125°C Junction temperature Unit Feb-03-2003 BAW78.../BAW79... 1For calculation of RthJA please refer to Application Note Thermal Resistance Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics 400 V Breakdown voltage V(BR) I (BR) = 100 µA Reverse current IR VR = 400 V - - - - VR = 400 V, TA = 150 °C µA 1 50 Forward voltage V VF IF = 1 A - - 1.6 IF = 2 A - - 2 CT - 10 - pF t rr - 1 - µs AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100 , Test circuit for reverse recovery time D.U.T. ΙF Puls generator: t p = 10µs, D = 0.05, tr = 0.6ns, R i = 50 Oscillograph EHN00019 Oscillograp: R = 50, tr = 0.35ns C 1pF 2 Feb-03-2003 BAW78.../BAW79... Reverse current IR = (TA ) Forward current IF = (VF) VR = 400V TA = 25°C ΙR BAW 78A...D 10 5 nA EHB00097 10 1 ΙF max 10 4 BAW 78A...D EHB00095 A 10 0 5 typ. 10 3 10 -1 5 10 2 10 -2 5 10 1 0 100 50 ˚C 10 -3 150 0 1 V TA Peak forward current IFM = (tp) 2 VF Forward current IF = (TS ) BAW78D 10 2 EHB00100 1200 mA D = 0.005 0.01 0.02 0.05 0.1 0.2 A 10 1 1000 900 800 IF Ι FM BAW 79A...D 10 0 700 600 500 400 10 -1 300 tp D= T tp 200 100 T 10-2 10-6 10-5 10-4 10-3 10-2 0 0 10-1 s 100 15 30 45 60 75 90 105 120 °C 150 TS t 3 Feb-03-2003 BAW78.../BAW79... Forward current IF = (TS ) BAW79D 1200 mA 1000 900 IF 800 700 600 500 400 300 200 100 0 0 15 30 45 60 75 90 105 120 °C 150 TS 4 Feb-03-2003