BGX50A Silicon Switching Diode Array 3 Bridge configuration High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM 70 Forward current IF 140 mA Total power dissipation, TS = 74 °C Ptot 210 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V 65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 360 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-31-2001 BGX50A Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. VF - - 1.3 V IR - - 0.2 µA IR - - 100 CD - - 1.5 pF t rr - - 6 ns DC characteristics Forward voltage IF = 100 mA Reverse current VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, IR = 10 mA, R L = 100 , measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF 2 Jul-31-2001 BGX50A Forward current IF = f (TS ) Reverse current IR = f (TA) 160 ΙR mA BGX 50A 10 5 nA V R = 70 V 10 4 120 max. 5 IF EHB00146 100 25V 70V 10 3 80 5 60 typ. 10 2 40 5 20 0 0 15 30 45 60 75 90 105 120 °C 10 1 150 0 50 100 ˚C TS TA Forward current IF = f (VF ) Peak forward current IFM = f (t p) TA = 25°C TA = 25°C 150 ΙF BGX 50A EHB00147 10 2 Ι FM mA BGX 50A EHB00148 A D= tp T 10 1 100 tp T D= 0.005 0.01 0.02 0.05 0.1 0.2 5 typ 150 max 10 0 50 5 0 0 0.5 1.0 V 10 -1 -6 10 1.5 VF 10 -5 10 -4 10 -3 10 -2 s 10 0 t 3 Jul-31-2001 BGX50A Forward voltage VF = f (TA) 1.0 BGX 50A V EHB00149 Ι F = 100 mA VF 10 mA 1 mA 0.5 0.1 mA 0 0 50 100 ˚C 150 TA 4 Jul-31-2001