BSD316SN OptiMOS™2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS(on),max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT363 • 100% lead-free; RoHS compliant 6 1 Type Package Tape and Reel Information BSD316SN PG-SOT363 L6327: 3000 pcs/ reel 2 5 4 3 Marking Lead Free Packing X7s Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 1.4 T A=70 °C 1.1 Pulsed drain current I D,pulse T A=25 °C 5.6 Avalanche energy, single pulse E AS I D=1.4 A, R GS=25 Ω 3.7 Reverse diode dv /dt dv /dt I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±20 V 0.5 W -55 ... 150 °C 0 (<250V) 260 °C IEC climatic category; DIN IEC 68-1 Rev 2.1 Unit 55/150/56 page 1 2009-02-11 BSD316SN Parameter Values Symbol Conditions Unit min. typ. max. - - 250 30 - - Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=0 V, I D=3,7 µA 1.2 1.6 2.0 Drain-source leakage current I DSS V DS=30 V, V GS=0 V, T j=25 °C - - 1 V DS=30 V, V GS=0 V, T j=150 °C - - 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=1.1 A - 192 280 mΩ V GS=10 V, I D=1.4 A - 120 160 |V DS|>2|I D|R DS(on)max, I D=1.1 A - 2.3 - Transconductance g fs S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB. Rev 2.1 page 2 2009-02-11 BSD316SN Parameter Values Symbol Conditions Unit min. typ. max. - 71 94 - 26 35 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 5 7 Turn-on delay time t d(on) - 3.4 - Rise time tr - 2.3 - Turn-off delay time t d(off) - 5.8 - Fall time tf - 1.0 - Gate to source charge Q gs - 0.3 - Gate to drain charge Q gd - 0.2 - Gate charge total Qg - 0.6 - Gate plateau voltage V plateau - 3.4 - V - - 0.5 A - - 5.6 - 0.8 1.1 V - 9.1 - ns - 2.6 - nC V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=1.4 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=15 V, I D=1.4 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.1 T A=25 °C V GS=0 V, I F=1.4 A, T j=25 °C V R=15 V, I F=1.4 A, di F/dt =100 A/µs page 3 2009-02-11 BSD316SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 1.5 0.5 0.375 I D [A] P tot [W] 1 0.25 0.5 0.125 0 0 0 40 80 120 160 0 20 40 T A [°C] 60 80 100 120 140 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 1 µs 10 µs 1 ms 10 100 µs 0 10 ms 0.5 10 Z thJA [K/W] I D [A] 102 -1 DC 0.2 0.1 0.05 101 0.02 0.01 10-2 single pulse 10-3 10 100 -1 10 0 10 1 10 2 V DS [V] Rev 2.1 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2009-02-11 BSD316SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 4 400 350 4.5 V 3 300 3.5 V 4V R DS(on) [mΩ] I D [A] 10 V 2 3.5 V 250 4V 4.5 V 200 5V 150 7V 10 V 1 100 3V 50 2.8 V 0 0 0 1 2 3 0 1 V DS [V] 2 3 4 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 4 6 3 g fs [S] I D [A] 4 2 2 1 150 °C 25 °C 0 0 0 1 2 3 4 5 V GS [V] Rev 2.1 0 2 4 6 8 I D [A] page 5 2009-02-11 BSD316SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.4 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D 320 2.8 280 2.4 240 2 98 % 200 V GS(th) [V] R DS(on) [mΩ] 98 % 160 1.6 typ 1.2 120 2% typ 0.8 80 0.4 40 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 102 101 Ciss Coss 100 I F [A] C [pF] 25 °C 101 10-1 150 °C Crss 150 °C, 98% 10-2 100 10-3 0 5 10 15 20 V DS [V] Rev 2.1 25 °C, 98% 0 0.4 0.8 1.2 1.6 V SD [V] page 6 2009-02-11 BSD316SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=1.4 A pulsed parameter: T j(start) parameter: V DD 101 8 7 6 10 25 °C 0 V GS [V] I AV [A] 5 100 °C 24 V 4 3 125 °C 10-1 15 V 6V 2 1 10-2 0 100 101 102 103 0 0.25 t AV [µs] 0.5 0.75 1 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 36 V GS 35 Qg 34 V BR(DSS) [V] 33 32 31 V g s(th) 30 29 28 Q g(th) Q sw 27 Q gs 26 -60 -20 20 60 100 Q g ate Q gd 140 T j [°C] Rev 2.1 page 7 2009-02-11 BSD316SN SOT363 Package Outline: Footprint: Packing: Reflow soldering: Rev 2.1 page 8 2009-02-11 BSD316SN Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.1 page 9 2009-02-11