BSL215P OptiMOS™ P2 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS(on),max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 • Avalanche rated A PG-TSOP6 • Qualified according to AEC Q101 6 • 100% lead-free; RoHS compliant 1 2 5 4 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL215P PG-TSOP6 L6327: 3000 pcs/ reel sPG Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter 1) Symbol Conditions Continuous drain current ID Value T A=25 °C -1.5 T A=70 °C -1.18 Unit A Pulsed drain current I D,pulse T A=25 °C -6 Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 Ω 11 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 1) Rev 2.2 ±12 V 0.5 W -55 ... 150 °C 0 (<250V) V 260 °C °C 55/150/56 °C Remark: one of both transistors in operation. page 1 2010-03-29 BSL215P Parameter Values Symbol Conditions Unit min. typ. max. - - 250 -20 - - Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint2) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA Gate threshold voltage V GS(th) V DS=VGS, I D=-11 µA -1.2 -0.9 -0.6 Drain-source leakage current I DSS V DS=-20 V, V GS=0 V, T j=25 °C - - 1 V DS=-20 V, V GS=0 V, T j=150 °C - - 100 V µA Gate-source leakage current I GSS V GS=-12V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-2.5 V, I D=-1.1 A - 166 280 mΩ V GS=-4.5 V, I D=-1.5 A - 105 150 |V DS|>2|I D|R DS(on)max, I D=-1.18 A - 4.5 - Transconductance g fs S 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB. Rev 2.2 page 2 2010-03-29 BSL215P Parameter Values Symbol Conditions Unit min. typ. max. - 260 346 - 102 135 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=-15 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 85 128 Turn-on delay time t d(on) - 6.7 - Rise time tr - 9.7 - Turn-off delay time t d(off) - 14.5 - Fall time tf - 14.0 - Gate to source charge Q gs - -0.49 - Gate to drain charge Q gd - -1.9 - Gate charge total Qg - -3.55 - Gate plateau voltage V plateau - -1.9 - V - - -0.5 A - - -6 - -0.8 -1.1 V - 21.0 - ns - -3.7 - nC V DD=-10 V, V GS=-4.5 V, I D=-1.5 A, R G=6 Ω ns Gate Charge Characteristics V DD=-16 V, I D=-1.5 A, V GS=0 to -4.5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.2 T A=25 °C V GS=0 V, I F=-1.5 A, T j=25 °C V R=10 V, I F=-1.5 A, di F/dt =100 A/µs page 3 2010-03-29 BSL215P 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≤-4.5 V 2 0.5 1.5 I D [A] P tot [W] 0.375 0.25 1 0.5 0.125 0 0 0 40 80 120 0 40 T A [°C] 80 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 1 µs 10 µs 100 µs 0.5 10 0 102 1 ms 0.2 0.1 Z thJA [K/W] I D [A] 10 ms 10-1 0.05 101 0.02 0.01 single pulse DC 10-2 100 10-3 10 10-1 -1 10 0 10 1 10 2 V DS [V] Rev 2.2 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2010-03-29 BSL215P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 500 3.3 V 450 5V 6 1.8 V 2V 2.3 V 400 2.5 V 5 350 4 R DS(on) [mΩ] 10 V I D [A] 2.3 V 3 2 300 250 200 2.5 V 150 2V 3.3 V 5V 100 1 7V 1.8 V 50 0 0 0 1 2 3 0 1 2 3 4 6 8 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 10 6 5 8 4 g fs [S] I D [A] 6 3 4 2 150 °C 2 1 25 °C 0 0 0 1 2 3 V GS [V] Rev 2.2 0 2 4 I D [A] page 5 2010-03-29 BSL215P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.5 A; V GS=-4.5 V V GS(th)=f(T j); V DS=VGS; I D=-11 µA parameter: I D 240 1.6 200 1.2 V GS(th) [V] 160 R DS(on) [mΩ] 98 % 98 % 120 typ typ 0.8 2% 80 0.4 40 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 100 Ciss Coss 102 I F [A] C [pF] 150 °C, 98% Crss 10-1 150 °C 25 °C, 98% 25 °C 10-2 101 10-3 0 5 10 15 20 V DS [V] Rev 2.2 0 0.4 0.8 1.2 1.6 V SD [V] page 6 2010-03-29 3 Safe operating area BSL215P 13 Avalanche characteristics 14. Typ. Gate charge I AS=f(tAV); R GS=25Ω V GS=f(Q gate); ID=-1.5A pulsed parameter: Tj(start) parameter: V DD 101 6 5 4V 10 V 16 V 25 °C V GS [V] I AV [A] 4 100 100 °C 3 2 125 °C 1 10-1 0 100 101 102 103 0 1 t AV [µs] 2 3 4 5 Q gate [nC] 15 Drain-source breackdown voltage 16 Gate charge waveforms V BR(DSS)=f(Tj); I D=250µA 24 V GS 23 Qg 22 V BR(DSS) [V] 21 20 V g s(th) 19 18 Q g(th) 17 Q sw Q gs 16 -60 -20 20 60 100 Q g ate Q gd 140 T j [°C] Rev 2.2 page 7 2010-03-29 BSL215P Package Outline: TSOP6 2.9 ±0.2 (2.25) 1.1 MAX. B 0.1 MAX. 1 2 3 0.35 +0.1 -0.05 0.2 M B 6x 0.15 +0.1 -0.06 0.95 0.2 1.9 M 1.6 ±0.1 4 10˚ MAX. 5 2.5 ±0.1 6 0.25 ±0.1 10˚ MAX. (0.35) A A GPX09300 Footprint: Packaging: 0.5 0.2 2.7 8 2.9 1.9 4 0.95 Remark: Wave soldering possible dep. on customers process conditions Pin 1 marking 3.15 1.15 CPWG5899 HLG09283 Dimensions in mm Rev 2.2 page 8 2010-03-29 BSL215P Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 page 9 2010-03-29