IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS®-T Power-Transistor Product Summary Features V DS 100 V R DS(on),max (SMD version) 4.8 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB100N10S3-05 PG-TO263-3-2 3PN1005 IPI100N10S3-05 PG-TO262-3-1 3PN1005 IPP100N10S3-05 PG-TO220-3-1 3PN1005 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 100 Unit A 100 Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse2) E AS I D=50A 1445 mJ Avalanche current, single pulse I AS 100 A Gate source voltage V GS ±20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.5 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=240µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=80 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 4.3 5.1 mΩ V GS=10V, I D=100A, SMD version - 4.0 4.8 Rev. 1.0 page 2 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Parameter Symbol Values Conditions Unit min. typ. max. - 8900 11570 pF - 2520 3276 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 220 330 Turn-on delay time t d(on) - 34 - Rise time tr - 17 - Turn-off delay time t d(off) - 60 - Fall time tf - 20 - Gate to source charge Q gs - 47 61 Gate to drain charge Q gd - 34 51 Gate charge total Qg - 135 176 Gate plateau voltage V plateau - 5.5 - V - - 100 A - - 400 0.6 1 1.2 V - 108 - ns - 380 - nC V GS=0V, V DS=25V, f =1MHz V DD=20 V, V GS=10 V, I D=80 A, R G=3.5 Ω ns Gate Charge Characteristics2) V DD=80 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=80A, T j=25°C Reverse recovery time2) t rr V R=50V, I F=I S, di F/dt =100A/µs Reverse recovery charge2) Q rr T C=25°C 1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 165A at 25°C. For detailed information see Application Note ANPS071E 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V; SMD 300 100 250 80 I D [A] P tot [W] 200 150 60 40 100 20 50 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 100 µs 100 1 ms I D [A] Z thJC [K/W] 0.5 10-1 0.1 0.05 10 10-2 0.01 single pulse 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 9 400 6.5 V 7V 10 V 360 8 320 280 R DS(on) [mΩ] I D [A] 240 200 5.5 V 160 5.5 V 7 6V 6 6V 5 120 6.5 V 7V 5V 80 4 10 V 40 0 3 0 1 2 3 4 0 5 20 40 60 V DS [V] 80 100 120 140 160 180 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD parameter: T j 8.5 350 300 7.5 250 R DS(on) [mΩ] 6.5 I D [A] 200 150 5.5 4.5 100 175 °C 25 °C 50 3.5 -55 °C 0 3 4 5 6 7 V GS [V] Rev. 1.0 2.5 -60 -20 20 60 100 140 180 T j [°C] page 5 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 4 3 C [pF] V GS(th) [V] 3.5 1200 µA 104 Ciss 240 µA Coss 2.5 103 2 Crss 2 10 101 1.5 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 103 1000 102 100 25 °C I F [A] I AV [A] 100 °C 175 °C 175 °C 25 °C 25 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 150 °C 0.1 1 10 100 1000 t AV [µs] page 6 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 115 3500 3000 110 25 A V BR(DSS) [V] E AS [mJ] 2500 2000 1500 50 A 105 100 1000 95 100 A 500 90 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD 10 V GS 9 20 V Qg 80 V 8 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 20 40 60 80 100 120 Q gate Q gd 140 Q gate [nC] Rev. 1.0 page 7 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Revision History Version Rev. 1.0 Date Changes page 9 2008-02-11