INFINEON IPP120N06S4-02

IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
OptiMOS®-T2 Power-Transistor
Product Summary
V DS
60
V
R DS(on),max (SMD version)
2.4
mΩ
ID
120
A
Features
PG-TO263-3-2
• N-channel - Enhancement mode
PG-TO262-3-1
PG-TO220-3-1
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB120N06S4-02
PG-TO263-3-2
4N0602
IPI120N06S4-02
PG-TO262-3-1
4N0602
IPP120N06S4-02
PG-TO220-3-1
4N0602
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
Value
T C=25°C, V GS=10V
120
T C=100°C, V GS=10V2)
120
Unit
A
Pulsed drain current2)
I D,pulse
T C=25°C
480
Avalanche energy, single pulse2)
E AS
I D=60A
560
mJ
Avalanche current, single pulse
I AS
120
A
Gate source voltage
V GS
±20
V
Power dissipation
P tot
188
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25°C
IEC climatic category; DIN IEC 68-1
Rev. 1.2
55/175/56
page 1
2009-07-01
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.8
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=140µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=60V, V GS=0V
-
0.01
1
-
10
200
V DS=60V, V GS=0V,
T j=125°C2)
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10V, I D=100A
-
2.4
2.8
mΩ
V GS=10V, I D=100A,
SMD version
-
2.0
2.4
Rev. 1.2
page 2
2009-07-01
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
12120
15750 pF
-
2980
3870
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
110
220
Turn-on delay time
t d(on)
-
25
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
50
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
63
85
Gate to drain charge
Q gd
-
15
30
Gate charge total
Qg
-
150
195
Gate plateau voltage
V plateau
-
5.2
-
V
-
-
120
A
-
-
480
V GS=0V, V DS=25V,
f =1MHz
V DD=30V, V GS=10V,
I D=120A, R G=3.5Ω
ns
Gate Charge Characteristics2)
V DD=48V, I D=120A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=100A,
T j=25°C
-
0.9
1.3
V
Reverse recovery time2)
t rr
V R=30V, I F=50A,
di F/dt =100A/µs
-
190
-
ns
Reverse recovery charge2)
Q rr
-
170
-
nC
T C=25°C
1)
Current is limited by bondwire; with an R thJC = 0.8K/W the chip is able to carry 206A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 3
2009-07-01
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V; SMD
200
140
175
120
150
100
125
I D [A]
P tot [W]
80
100
60
75
40
50
20
25
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; SMD
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
100
1 µs
0.5
10 µs
100 µs
100
10-1
1 ms
I D [A]
Z thJC [K/W]
0.1
0.05
0.01
-2
10
10
single pulse
10-3
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.2
10-6
page 4
2009-07-01
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
parameter: V GS
480
10 V
8V
7V
6V
5.5 V
420
6.5 V
9
6.5 V
360
7
6V
R DS(on) [mΩ]
I D [A]
300
240
180
5
5.5 V
7V
120
3
8V
60
10 V
0
1
0
1
2
3
4
0
120
240
V DS [V]
360
480
I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD
parameter: T j
4
480
420
3.5
360
3
R DS(on) [mΩ]
I D [A]
300
240
180
2.5
2
175 °C
120
25 °C
60
1.5
-55 °C
0
3
4
5
6
7
V GS [V]
Rev. 1.2
1
-60
-20
20
60
100
140
180
T j [°C]
page 5
2009-07-01
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
105
4
3.5
Ciss
C [pF]
V GS(th) [V]
104
1400 µA
3
Coss
103
140 µA
2.5
102
Crss
2
101
1.5
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
V DS [V]
T j [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: T j(start)
103
1000
102
100
25 °C
I AV [A]
I F [A]
175 °C
25 °C
101
150 °C
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Rev. 1.2
100 °C
0.1
1
10
100
1000
t AV [µs]
page 6
2009-07-01
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
66
600
500
64
60 A
V BR(DSS) [V]
E AS [mJ]
400
300
62
60
200
58
100
56
0
25
75
125
-55
175
-15
T j [°C]
25
65
105
145
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 120 A pulsed
parameter: V DD
10
V GS
9
12 V
Qg
48 V
8
7
V GS [V]
6
5
V g s(th)
4
3
2
Q g (th)
Q sw
1
Q gs
0
0
40
80
120
Q gate
Q gd
160
Q gate [nC]
Rev. 1.2
page 7
2009-07-01
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2009
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.2
page 8
2009-07-01
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
Revision History
Version
Date
Changes
Revision 1.1
Update of RthJC and related
parameters from 0.6K/W to
22.08.2008 0.8K/W
Revision 1.2
01.07.2009 Update of SOA diagram
Rev. 1.2
page 9
2009-07-01