INFINEON IPD90N03S4L-03

IPD90N03S4L-03
OptiMOS®-T2 Power-Transistor
Product Summary
V DS
30
V
R DS(on),max
3.3
mΩ
ID
90
A
Features
• N-channel - Enhancement mode
PG-TO252-3-11
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD90N03S4L-03
PG-TO252-3-11
4N03L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
90
Unit
A
90
Pulsed drain current2)
I D,pulse
T C=25 °C
360
Avalanche energy, single pulse
E AS
I D=90 A
85
mJ
Avalanche current, single pulse
I AS
T C=25 °C
90
A
Gate source voltage
V GS
-
±16
V
Power dissipation
P tot
T C=25 °C
94
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
Rev. 2.1
page 1
2010-03-08
IPD90N03S4L-03
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
-
1.6
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=45 µA
1.0
1.6
2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
10
1000
-
5
60
V DS=30 V, V GS=0 V,
T j=125 °C2)
V DS=18 V, V GS=0 V,
T j=85 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=16 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=45 A
-
3.4
4.4
mΩ
V GS=10 V, I D=90 A
-
2.5
3.3
Rev. 2.1
page 2
2010-03-08
IPD90N03S4L-03
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
4000
5100
-
1000
1300
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
53
100
Turn-on delay time
t d(on)
-
9
-
Rise time
tr
-
6
-
Turn-off delay time
t d(off)
-
37
-
Fall time
tf
-
7
-
Gate to source charge
Q gs
-
12
15
Gate to drain charge
Q gd
-
8
16
Gate charge total
Qg
-
60
75
Gate plateau voltage
V plateau
-
3.1
-
V
-
-
90
A
-
-
360
0.6
0.9
1.3
V
-
60
-
ns
-
50
-
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=90 A, R G=3.5 Ω
pF
ns
Gate Charge Characteristics2)
V DD=24 V, I D=90 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=90 A,
T j=25 °C
Reverse recovery time2)
t rr
V R=15 V, I F=I S,
di F/dt =100 A/µs
Reverse recovery charge2)
Q rr
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 1.6K/W the chip is able to carry 129A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 3
2010-03-08
IPD90N03S4L-03
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
100
100
90
80
80
70
60
I D [A]
P tot [W]
60
50
40
40
30
20
20
10
0
0
0
50
100
150
0
200
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
100
10 µs
100
0.5
I D [A]
Z thJC [K/W]
1 ms 100 µs
0.1
0.05
10-1
0.01
10
10-2
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 2.1
single pulse
page 4
2010-03-08
IPD90N03S4L-03
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
280
10 V
12
5V
4.5 V
240
4V
3.5 V
10
200
R DS(on) [mΩ]
9
160
I D [A]
3V
11
3.5 V
120
8
7
6
5
80
4V
4
3V
4.5 V
40
5V
3
2.5 V
10 V
0
2
0
1
2
3
4
0
30
60
V DS [V]
90
120
I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 90 A; V GS = 10 V
parameter: T j
5
280
-55 °C
25 °C
240
175 °C
4
R DS(on) [mΩ]
200
I D [A]
160
120
3
80
2
40
0
1
2
3
4
5
V GS [V]
Rev. 2.1
1
-60
-20
20
60
100
140
180
T j [°C]
page 5
2010-03-08
IPD90N03S4L-03
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
2
Ciss
1.75
450 µA
1.5
C [pF]
Coss
45 µA
V GS(th) [V]
1.25
103
1
0.75
102
Crss
0.5
0.25
101
0
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
V DS [V]
T j [°C]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: T j(start)
100
103
25 °C
100 °C
150 °C
I F [A]
I AV [A]
102
175 °C
10
25 °C
1
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Rev. 2.1
1
10
100
1000
t AV [µs]
page 6
2010-03-08
IPD90N03S4L-03
13 Typical avalanche energy
14 Typ. drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
34
400
350
33
22.5 A
300
32
V BR(DSS) [V]
E AS [mJ]
250
200
150
31
45 A
30
100
29
90 A
50
28
0
25
75
125
-55
175
-15
T j [°C]
25
65
105
145
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 90 A pulsed
parameter: V DD
10
V GS
6V
9
24 V
Qg
8
7
V GS [V]
6
5
V g s(th)
4
3
2
Q g (th)
Q sw
1
Q gs
0
0
20
40
60
Q gate
Q gd
80
Q gate [nC]
Rev. 2.1
page 7
2010-03-08
IPD90N03S4L-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1
page 8
2010-03-08
IPD90N03S4L-03
Revision History
Version
Date
Changes
Rev 2.0
09.03.2007 Final data sheet
Rev 2.1
08.03.2010 Update of RDSon
Rev. 2.1
page 9
2010-03-08