INFINEON IPB100P03P3L-04

IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
OptiMOS®-P Trench Power-Transistor
Product Summary
V DS
Features
-30
R DS(on),max (SMD version)
• P-channel - Logic Level - Enhancement mode
4
ID
• Automotive AEC Q101 qualified
V
mΩ
-100
A
• MSL1 up to 260°C peak reflow
PG-TO263-3-2
• 175°C operating temperature
PG-TO262-3-1
PG-TO220-3-1
• Green package (RoHS Compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
• Intended for reverse battery protection
Type
Package
Marking
IPB100P03P3L-04
PG-TO263-3-2
3P03L04
IPI100P03P3L-04
PG-TO262-3-1
3P03L04
IPP100P03P3L-04
PG-TO220-3-1
3P03L04
drain
pin 2
gate
pin 1
source
pin 3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Value
-100
I D,pulse
T C=25°C
-400
Avalanche energy, single pulse
E AS
I D=-80A
450
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.1
A
-100
Pulsed drain current2)
T C=25°C
Unit
mJ
-16 / +5
V
200
W
-55 ... +175
°C
55/175/56
page 1
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.65
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D=-250µA
-30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS,
I D=-475µA
-1
-1.5
-2.1
Zero gate voltage drain current
I DSS
V DS=-30V, V GS=0V,
T j=25°C
-
-0.1
-1
-
-10
-100
V DS=-30V, V GS=0V,
T j=125°C2)
V
µA
Gate-source leakage current
I GSS
V GS=-16V, V DS=0V
-
-10
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-4.5V, I D=-50A
-
4.8
7.6
mΩ
V GS=-4.5V, I D=-50A,
SMD version
-
4.5
7.3
V GS=-10V, I D=-80A
-
3.3
4.3
V GS=-10V, I D=-80A,
SMD version
-
3.0
4
Rev. 1.1
page 2
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
7150
9300
-
2150
2800
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
1650
2500
Turn-on delay time
t d(on)
-
30
-
Rise time
tr
-
45
-
Turn-off delay time
t d(off)
-
200
-
Fall time
tf
-
180
-
Gate to source charge
Q gs
-
25
33
Gate to drain charge
Q gd
-
55
82.5
Gate charge total
Qg
-
150
200
Gate plateau voltage
V plateau
-
-3.0
-
V
A
V GS=0V, V DS=-25V,
f =1MHz
V DD=-15V,
V GS=-10V, I D=-50A,
R G=6Ω
pF
ns
Gate Charge Characteristics2)
V DD=-24V,
I D=-80A,
V GS=0 to -10V
nC
Reverse Diode
Diode continous forward current2)
IS
T A=25°C
-
-
-100
Diode pulse current2)
I S,pulse
T A=25°C
-
-
-400
Diode forward voltage
V SD
V GS=0V, I F=-80A
-0.6
-1
-1.2
V
Reverse recovery time2)
t rr
V R=-15V, I F=-50A,
di F/dt =100A/µs
-
50
-
ns
Reverse recovery charge2)
Q rr
-
55
-
nC
1)
Current is limited by bondwire; with an R thJC = 0.65 K/W the chip is able to carry I D=-195A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
1 Power dissipation
2 Drain current
P tot=f(T C); V GS ≤ -4 V
I D=f(T C); V GS ≤ -4 V
120
250
100
200
80
-I D [A]
P tot [W]
150
60
100
40
50
20
0
0
0
50
100
150
0
200
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1000
100
1 µs
limited by on-state
resistance
0.5
10 µs
100 µs
1 ms
10-1
-I D [A]
Z thJC [K/W]
100
0.1
0.05
0.01
10-2
10
single pulse
10-3
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
-V DS [V]
Rev. 1.1
10-6
page 4
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
400
16
10 V
5V
4.5 V
3V
3.5 V
14
300
12
4V
R DS(on) [mΩ]
-I D/ [A]
10
200
3.5 V
8
6
4V
4.5 V
5V
4
100
3V
10 V
2
2.5 V
0
0
0
1
2
3
4
5
0
6
20
40
60
80
100 120 140 160 180
-I D [A]
-V DS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 4V
R DS(on) = f(T j); I D = -80 A; V GS = 10 V
parameter: T j
200
-55 °C
5
175 °C
25 °C
4
R DS(on) [mΩ]
-I D [A]
150
100
3
2
50
1
0
0
1
2
3
4
5
Rev. 1.1
-60
-20
20
60
100
140
180
T j [°C]
-V GS [V]
page 5
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
105
2
1.75
4750µA
1.5
475µA
C [pF]
-V GS(th) [V]
1.25
1
Ciss
104
0.75
Coss
0.5
Crss
0.25
103
0
-60
-20
20
60
100
140
0
180
5
10
T j [°C]
15
20
25
30
-V DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I AV = f(t AV)
parameter: T j
parameter: T j(start)
103
1000
102
100
I F [A]
-I AV [A]
25°C
100°C
150°C
175 °C 25 °C
101
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-V SD [V]
Rev. 1.1
1
10
100
1000
t AV [µs]
page 6
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
2000
37
20 A
1800
35
1600
1400
1000
-V BR(DSS) [V]/
E AS [mJ]
33
1200
40 A
800
31
29
600
80 A
400
27
200
0
25
75
125
175
25
225
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 80 A pulsed
parameter: V DD
12
8V
V GS
32 V
10
Qg
-V GS [V]
8
6
4
2
Q gate
Q gs
Q gd
0
0
50
100
150
200
Q gate [nC]
Rev. 1.1
page 7
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1
page 8
2007-09-25
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
Revision History
Version
Changes
Date
Type on page 1 changed from
IP_100P06P3L-04 to IP_100P03PL
25.09.2007 04
Rev 1.1
Rev. 1.1
page 9
2007-09-25