IPB80N06S2-09 IPP80N06S2-09 OptiMOS® Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS(on),max (SMD version) 8.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2-09 PG-TO263-3-2 SP0002-18741 2N0609 IPP80N06S2-09 PG-TO220-3-1 SP0002-18740 2N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 Unit A 80 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse2) E AS I D= 80 A 370 mJ Gate source voltage4) V GS ±20 V Power dissipation P tot 190 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2006-03-13 IPB80N06S2-09 IPP80N06S2-09 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.8 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=125 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=50 A, - 7.6 9.1 mΩ V GS=10 V, I D=50 A, SMD version - 7.3 8.8 Rev. 1.0 page 2 2006-03-13 IPB80N06S2-09 IPP80N06S2-09 Parameter Symbol Values Conditions Unit min. typ. max. - 2360 - - 610 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 150 - Turn-on delay time t d(on) - 14 - Rise time tr - 29 - Turn-off delay time t d(off) - 39 - Fall time tf - 28 - Gate to source charge Q gs - 12 16 Gate to drain charge Q gd - 24 37 Gate charge total Qg - 60 80 Gate plateau voltage V plateau - 5.5 - V - - 80 A - - 320 V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=80 A, R G=4.7 Ω pF ns Gate Charge Characteristics2) V DD=44 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.9 1.3 V Reverse recovery time2) t rr V R=30 V, I F=I S, di F/dt =100 A/µs - 50 63 ns Reverse recovery charge2) Q rr - 76 95 nC T C=25 °C 1) Current is limited by bondwire; with an R thJC = 0.8 K/W the chip is able to carry 99 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13. 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-13 IPB80N06S2-09 IPP80N06S2-09 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 10 V 100 200 180 80 160 140 60 I D [A] P tot [W] 120 100 80 40 60 40 20 20 0 0 0 50 100 150 0 200 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 0.5 1 µs 10 µs 100 10-1 I D [A] 1 ms 0.1 0.05 Z thJC [K/W] 100 µs 0.01 10-2 10 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-7 page 4 2006-03-13 IPB80N06S2-09 IPP80N06S2-09 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 300 18 10 V 5.5 V 5V 16 7V 250 6V 14 R DS(on) [mΩ] I D [A] 200 150 6V 12 10 100 8V 8 5.5 V 10 V 50 6 5V 4.5 V 0 4 0 2 4 6 8 10 0 20 40 60 80 100 120 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. Forward transconductance I D = f(V GS); V DS = 6V g fs = f(I D); T j = 25°C parameter: T j parameter: g fs 160 150 140 125 120 100 g fs [S] I D [A] 100 80 75 60 50 40 25 175 °C 20 25 °C -55 °C 0 0 2 3 4 5 6 Rev. 1.0 0 50 100 150 200 I D [A] V GS [V] page 5 2006-03-13 IPB80N06S2-09 IPP80N06S2-09 10 Typ. gate threshold voltage R DS(ON) = f(T j) V GS(th) = f(T j); V GS = V DS parameter: I D = 80 A; VGS = 10 V parameter: I D 16 4 14 3.5 12 3 625 µA V GS(th) [V] R DS(on) [mΩ] 9 Typ. Drain-source on-state resistance 10 125 µA 2.5 8 2 6 1.5 4 1 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(VSD) parameter: T j 104 103 Ciss I F [A] C [pF] 102 103 Coss 175 °C 101 25 °C Crss 102 100 0 5 10 15 20 25 30 V DS [V] Rev. 1.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] page 6 2006-03-13 IPB80N06S2-09 IPP80N06S2-09 13 Typical avalanche energy 14 Typ. gate charge E AS = f(T j) V GS = f(Q gate); I D = 80 A pulsed parameter: I D 12 700 50 A 600 11 V 10 44 V 60 A 500 8 E AS [mJ] 400 V GS [V] 80 A 300 6 4 200 2 100 0 0 0 50 100 150 0 200 20 40 T j [°C] 60 80 Q gate [nC] 15 Typ. drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) = f(T j); I D = 1 mA 66 64 V GS Qg 62 V BR(DSS) [V] 60 58 56 54 52 50 Q gate 48 Q gs Q gd 46 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 7 2006-03-13 IPB80N06S2-09 IPP80N06S2-09 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-13