INFINEON IPP80N06S2-09

IPB80N06S2-09
IPP80N06S2-09
OptiMOS® Power-Transistor
Product Summary
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
V DS
55
V
R DS(on),max (SMD version)
8.8
mΩ
ID
80
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
PG-TO263-3-2
PG-TO220-3-1
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB80N06S2-09
PG-TO263-3-2
SP0002-18741
2N0609
IPP80N06S2-09
PG-TO220-3-1
SP0002-18740
2N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
80
Unit
A
80
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse2)
E AS
I D= 80 A
370
mJ
Gate source voltage4)
V GS
±20
V
Power dissipation
P tot
190
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
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IPB80N06S2-09
IPP80N06S2-09
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.8
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=125 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=55 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=50 A,
-
7.6
9.1
mΩ
V GS=10 V, I D=50 A,
SMD version
-
7.3
8.8
Rev. 1.0
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2006-03-13
IPB80N06S2-09
IPP80N06S2-09
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
2360
-
-
610
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
150
-
Turn-on delay time
t d(on)
-
14
-
Rise time
tr
-
29
-
Turn-off delay time
t d(off)
-
39
-
Fall time
tf
-
28
-
Gate to source charge
Q gs
-
12
16
Gate to drain charge
Q gd
-
24
37
Gate charge total
Qg
-
60
80
Gate plateau voltage
V plateau
-
5.5
-
V
-
-
80
A
-
-
320
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=80 A, R G=4.7 Ω
pF
ns
Gate Charge Characteristics2)
V DD=44 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
-
0.9
1.3
V
Reverse recovery time2)
t rr
V R=30 V, I F=I S,
di F/dt =100 A/µs
-
50
63
ns
Reverse recovery charge2)
Q rr
-
76
95
nC
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 0.8 K/W the chip is able to carry 99 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
See diagram 13.
4)
Qualified at -20V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
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IPB80N06S2-09
IPP80N06S2-09
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 10 V
100
200
180
80
160
140
60
I D [A]
P tot [W]
120
100
80
40
60
40
20
20
0
0
0
50
100
150
0
200
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
100
0.5
1 µs
10 µs
100
10-1
I D [A]
1 ms
0.1
0.05
Z thJC [K/W]
100 µs
0.01
10-2
10
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-7
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IPB80N06S2-09
IPP80N06S2-09
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
300
18
10 V
5.5 V
5V
16
7V
250
6V
14
R DS(on) [mΩ]
I D [A]
200
150
6V
12
10
100
8V
8
5.5 V
10 V
50
6
5V
4.5 V
0
4
0
2
4
6
8
10
0
20
40
60
80
100
120
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. Forward transconductance
I D = f(V GS); V DS = 6V
g fs = f(I D); T j = 25°C
parameter: T j
parameter: g fs
160
150
140
125
120
100
g fs [S]
I D [A]
100
80
75
60
50
40
25
175 °C
20
25 °C
-55 °C
0
0
2
3
4
5
6
Rev. 1.0
0
50
100
150
200
I D [A]
V GS [V]
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IPB80N06S2-09
IPP80N06S2-09
10 Typ. gate threshold voltage
R DS(ON) = f(T j)
V GS(th) = f(T j); V GS = V DS
parameter: I D = 80 A; VGS = 10 V
parameter: I D
16
4
14
3.5
12
3
625 µA
V GS(th) [V]
R DS(on) [mΩ]
9 Typ. Drain-source on-state resistance
10
125 µA
2.5
8
2
6
1.5
4
1
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(V DS); V GS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
104
103
Ciss
I F [A]
C [pF]
102
103
Coss
175 °C
101
25 °C
Crss
102
100
0
5
10
15
20
25
30
V DS [V]
Rev. 1.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
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IPB80N06S2-09
IPP80N06S2-09
13 Typical avalanche energy
14 Typ. gate charge
E AS = f(T j)
V GS = f(Q gate); I D = 80 A pulsed
parameter: I D
12
700
50 A
600
11 V
10
44 V
60 A
500
8
E AS [mJ]
400
V GS [V]
80 A
300
6
4
200
2
100
0
0
0
50
100
150
0
200
20
40
T j [°C]
60
80
Q gate [nC]
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS) = f(T j); I D = 1 mA
66
64
V GS
Qg
62
V BR(DSS) [V]
60
58
56
54
52
50
Q gate
48
Q gs
Q gd
46
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
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2006-03-13
IPB80N06S2-09
IPP80N06S2-09
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-13