IPD70N04S3-07 OptiMOS®-T Power-Transistor Product Summary V DS 40 V R DS(on),max 6.0 mΩ ID 82 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N04S3-07 PG-TO252-3-11 QN0407 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Value 82 Unit A 58 Pulsed drain current1) I D,pulse T C=25 °C 280 Avalanche energy, single pulse E AS I D=50 A 145 mJ Gate source voltage V GS ±20 V Power dissipation P tot 79 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2007-05-03 IPD70N04S3-07 Parameter Symbol Values Conditions Unit min. typ. max. - - 1.9 minimal footprint - - 62 6 cm2 cooling area2) - - 40 Thermal characteristics1) Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=50 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - - 1 - - 100 V DS=40 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=70 A - 4.9 6.0 mΩ Rev. 1.0 page 2 2007-05-03 IPD70N04S3-07 Parameter Symbol Values Conditions Unit min. typ. max. - 2050 2700 - 610 800 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 90 130 Turn-on delay time t d(on) - 13 - Rise time tr - 8 - Turn-off delay time t d(off) - 17 - Fall time tf - 7 - Gate to source charge Q gs - 12 16 Gate to drain charge Q gd - 8 14 Gate charge total Qg - 30 40 Gate plateau voltage V plateau - 6.0 - V - - 70 A - - 280 - 1 1.3 V - 34 - ns - 36 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=70 A, R G=3.5 Ω pF ns Gate Charge Characteristics1) V DD=32 V, I D=70 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD Reverse recovery time1) t rr Reverse recovery charge1) Q rr 1) T C=25 °C V GS=0 V, I F=70 A, T j=25 °C V R=20 V, I F=I S, di F/dt =100 A/µs Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2007-05-03 IPD70N04S3-07 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 90 100 80 80 70 60 60 I D [A] P tot [W] 50 40 40 30 20 20 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 10 µs 100 0.5 100 µs Z thJC [K/W] I D [A] 0.1 1 ms 0.05 10-1 0.01 10 10-2 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 single pulse page 4 2007-05-03 IPD70N04S3-07 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 20 200 6V 5.5 V 10 V 6.5 V 18 160 16 7V 14 R DS(on) [mΩ] I D [A] 120 6.5 V 80 12 10 7V 8 6V 6 40 5.5 V 10 V 4 5V 2 0 0 2 4 6 0 8 20 40 60 80 100 120 140 180 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 70 A; V GS = 10 V parameter: T j 320 9 -55 °C 280 8 240 200 I D [A] 25 °C 160 175 °C 120 R DS(on) [mΩ] 7 6 5 80 4 40 3 0 2 3 4 5 6 7 8 V GS [V] Rev. 1.0 2 -60 -20 20 60 100 T j [°C] page 5 2007-05-03 IPD70N04S3-07 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 Ciss V GS(th) [V] C [pF] 500 µA 3 103 Coss 50 µA 2.5 102 2 Crss 1.5 101 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 100 103 25 °C 100 °C 150 °C I F [A] I AV [A] 102 101 175 °C 25 °C 0.6 0.8 100 1 0 0.2 0.4 1 1.2 1.4 V SD [V] Rev. 1.0 10 1 10 100 1000 t AV [µs] page 6 2007-05-03 IPD70N04S3-07 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 55 700 600 50 12.5 A V BR(DSS) [V] E AS [mJ] 500 400 300 45 40 25 A 200 35 50 A 100 30 0 25 75 125 -60 175 -20 T j [°C] 20 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 70 A pulsed parameter: V DD 12 V GS 8V Qg 32 V 10 V GS [V] 8 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 10 20 30 Q gate Q gd 40 Q gate [nC] Rev. 1.0 page 7 2007-05-03 IPD70N04S3-07 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2007-05-03 IPD70N04S3-07 Revision History Version Rev. 1.0 Date Changes page 9 2007-05-03