Bulletin I25167 rev. C 03/03 ST110S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center gate Hermetic metal case with ceramic insulator (Glass-metal seal over 1200V) 110A International standard case TO-209AC (TO-94) Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters ST110S Units 110 A 90 °C 175 A @ 50Hz 2700 A @ 60Hz 2830 A @ 50Hz 36.4 KA2s @ 60Hz 33.2 KA2s 400 to 1600 V 100 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM 2 I t V DRM /V RRM tq typical TJ www.irf.com case style TO-209AC (TO-94) 1 ST110S Series Bulletin I25167 rev. C 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code V DRM/V RRM, max. repetitive peak and off-state voltage V VRSM , maximum nonrepetitive peak voltage V 04 400 500 ST110S 08 800 900 12 1200 1300 16 1600 1700 I DRM/I RRM max. @ TJ = TJ max mA 20 On-state Conduction Parameter I T(AV) ST110S Units Conditions Max. average on-state current 110 A @ Case temperature 90 °C I T(RMS) Max. RMS on-state current 175 A I TSM Max. peak, one-cycle 2700 t = 10ms non-repetitive surge current 2830 t = 8.3ms reapplied t = 10ms 100% VRRM 2270 I2t Maximum I2t for fusing A V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 Low level value of on-state t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 33.2 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 364 KA2 s High level value of on-state slope resistance KA2√s t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.90 V (I > π x IT(AV)),TJ = TJ max. 0.92 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.79 slope resistance r t2 No voltage 36.4 23.5 Maximum I2√t for fusing DC @ 85°C case temperature 2380 25.8 I 2√t 180° conduction, half sine wave mΩ (I > π x IT(AV)),TJ = TJ max. 1.81 V TM Max. on-state voltage IH Maximum holding current 600 IL Typical latching current 1000 1.52 V Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse mA T J = 25°C, anode supply 12V resistive load Switching Parameter di/dt Units Conditions Max. non-repetitive rate of rise of turned-on current td ST110S Typical delay time 500 A/µs 2 Typical turn-off time 100 TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g/dt = 1A/µs 2.0 µs tq Gate drive 20V, 20Ω, tr ≤ 1µs Vd = 0.67% VDRM, TJ = 25°C ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs www.irf.com ST110S Series Bulletin I25167 rev. C 03/03 Blocking Parameter ST110S Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs TJ = TJ max. linear to 80% rated VDRM IRRM IDRM Max. peak reverse and off-state leakage current 20 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST110S Maximum peak gate power 5 PG(AV) Maximum average gate power IGM Max. peak positive gate current +VGM Maximum peak positive 2.0 Maximum peak negative IGD VGD TJ = TJ max, t p ≤ 5ms V TJ = TJ max, tp ≤ 5ms MAX. DC gate current required 180 - to trigger 90 150 40 - DC gate voltage required 2.9 - to trigger 1.8 3.0 1.2 - DC gate current not to trigger DC gate voltage not to trigger TJ = TJ max, f = 50Hz, d% = 50 A 5.0 TYP. VGT TJ = TJ max, t p ≤ 5ms 20 gate voltage IGT W 1 gate voltage -VGM Units Conditions 10 0.25 TJ = - 40°C mA TJ = 25°C TJ = 125°C TJ = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C mA V TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST110S TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% Units Conditions °C 0.195 DC operation K/W 0.08 Mounting surface, smooth, flat and greased 15.5 Non lubricated threads (137) 14 Nm (lbf-in) Lubricated threads (120) wt Approximate weight Case style www.irf.com 130 g TO - 209AC (TO-94) See Outline Table 3 ST110S Series Bulletin I25167 rev. C 03/03 ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.035 Conditions 0.025 120° 0.041 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 K/W T J = T J max. Ordering Information Table Device Code ST 11 0 S 16 P 0 V 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - P = Stud base 1/2"-20UNF-2A threads 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 8 - 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) 4 www.irf.com ST110S Series Bulletin I25167 rev. C 03/03 Outline Table GLASS METAL SEAL . 16.5 (0.65) MAX. 37 ) MI N 2.6 (0.10) MAX. 8.5 (0.33) DIA. )M IN . 9.5 ( 0. 4.3 (0.17) DIA ( 0. 79 FLEXIBLE LEAD 20 C.S. 16mm 2 (.025 s.i.) C.S. 0.4 mm 2 Fast-on Terminals (.0006 s.i.) 170 (6.69) AMP. 280000-1 REF-250 RED CATHODE WHITE GATE 215 (8.46) 10 (0.39) RED SHRINK 23.5 (0.93) MAX. DIA. MAX. 12.5 (0.49) MAX. WHITE SHRINK 21 (0.83) 29 (1.14) MAX. 70 (2.75) MIN. 157 (6.18) RED SILICON RUBBER SW 27 1/2"-20UNF-2A Case Style TO-209AC (TO-94) 29.5 (1.16) MAX. All dimensions in millimeters (inches) CERAMIC HOUSING 16.5 (0.65) MAX. 8.5 (0.33) DIA. 37 )M IN . 2.6 (0.10) MAX. C.S. 0.4 mm 2 RED SILICON RUBBER C.S. 16mm 2 (.025 s.i.) . IN )M ( 0. 20 FLEXIBLE LEAD 79 9 .5 (0 . 4.3 (0.17) DIA 170 (6.69) 157 (6.18) (.0006 s.i.) RED CATHODE WHITE GATE 10 (0.39) WHITE SHRINK MAX. 12.5 (0.49) MAX. 22.5 (0.88) MAX. DIA. 21 (0.83) 29 (1.14) MAX. 70 (2.75) MIN. 215 (8.46) RED SHRINK SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. www.irf.com 5 ST110S Series 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Bulletin I25167 rev. C 03/03 ST110S Series RthJC (DC) = 0.195 K/ W 120 110 Conduction Angle 100 90 30° 60° 90° 120° 180° 80 0 20 40 60 80 100 120 130 ST110SSeries RthJC (DC) = 1.95 K/ W 120 110 Conduction Period 30° 100 60° 90 90° 120° 180° 80 0 20 Average On-state Current (A) A W K/ .1 =0 W K/ e lt -D RMSLimit S R th 2 0. 100 0. 4 K/ W 0. 5 K/ W 0. 6 K/ W W K/ 120 3 0. 0.8 K/ W 1K /W 60 Conduction Angle R 80 a Maximum Average On-state Power Loss (W) Fig. 2 - Current Ratings Characteristics 180° 120° 90° 60° 30° 140 40 60 80 100 120 140 160 180 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 160 DC 1.2 K/ W 40 ST110SSeries TJ = 125°C 20 0 0 20 40 60 80 100 Average On-state Current (A) 120 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 220 1 0. K/ W W K/ 0.4 ta el -D 140 0. 3 = 160 W K/ 180 A hS R t DC 180° 120° 90° 60° 30° 200 2 0. K/ W 0.5 K/ W 0.6 K/ W 0.8 K/ W 120 100 RMSLimit 80 Conduction Period 60 R Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 1K /W 1.2 K/ W 40 ST110SSeries TJ = 125°C 20 0 0 20 40 60 80 100 120 140 160 180 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics 6 www.irf.com ST110S Series 2400 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Bulletin I25167 rev. C 03/03 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 2200 2000 1800 1600 1400 1200 ST110S Series 1000 1 10 100 2800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 2400 Initial TJ = 125°C No Voltage Reapplied 2200 Rated VRRMReapplied 2600 2000 1800 1600 1400 1200 ST110S Series 1000 0.01 0.1 1 10 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 Tj = 25˚C 100 Tj = 125˚C ST110S Series 10 0.5 1.5 2.5 3.5 4.5 Instantaneous On-state Voltage (V) Transient Thermal Impedanc e Z thJC (K/ W) Fig. 7 - On-state Voltage Drop Characteristics 1 Steady State Value R thJC = 0.195 K/ W (DC Operation) 0.1 0.01 ST110SSeries 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic www.irf.com 7 ST110S Series Bulletin I25167 rev. C 03/03 Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (b) VGD IGD 0.1 0.001 0.01 (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, = 4ms = 2ms = 1ms = 0.66ms (a) (1) (2) (3) (4) Frequenc y Limited by PG(AV) Device: ST110SSeries 0.1 tp tp tp tp Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/03 8 www.irf.com