Bulletin I25165 rev. C 03/03 ST180S SERIES Stud Version PHASE CONTROL THYRISTORS Features Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) 200A International standard case TO-209AB (TO-93) Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters ST180S Units 200 A 85 °C 314 A @ 50Hz 5000 A @ 60Hz 5230 A @ 50Hz 125 KA2s @ 60Hz 114 KA2s 400 to 2000 V 100 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I 2t V DRM /V RRM tq typical TJ www.irf.com case style TO-209AB (TO-93) 1 ST180S Series Bulletin I25165 rev. C 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage V DRM/V RRM , max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage V repetitive peak voltage V @ TJ = TJ max 04 400 500 ST180S 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 mA 30 On-state Conduction Parameter I T(AV) ST180S Units Conditions Max. average on-state current 200 A @ Case temperature 85 °C I T(RMS) Max. RMS on-state current 314 A I TSM 5000 Max. peak, one-cycle non-repetitive surge current I 2t I 2√t Maximum I2t for fusing Maximum I2√t for fusing V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 Low level value of on-state High level value of on-state slope resistance A No voltage t = 8.3ms reapplied t = 10ms 100% VRRM 4400 t = 8.3ms reapplied Sinusoidal half wave, 125 t = 10ms No voltage Initial TJ = TJ max. 114 t = 8.3ms reapplied 88 t = 10ms 100% VRRM 81 t = 8.3ms reapplied 1250 KA2 s KA2 √s t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.08 V (I > π x IT(AV)),TJ = TJ max. 1.14 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.18 slope resistance r t2 DC @ 76°C case temperature t = 10ms 5230 4200 180° conduction, half sine wave mΩ (I > π x IT(AV)),TJ = TJ max. 1.14 V TM Max. on-state voltage 1.75 IH Maximum holding current 600 IL Max. (typical) latching current V Ipk= 570A, TJ = 125°C, tp = 10ms sine pulse mA TJ = TJ max, anode supply 12V resistive load 1000 (300) Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td Typical delay time ST180S 1000 Units Conditions A/µs 2 Typical turn-off time 100 TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g /dt = 1A/µs 1.0 µs tq Gate drive 20V, 20Ω, tr ≤ 1µs Vd = 0.67% VDRM, TJ = 25°C ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs www.irf.com ST180S Series Bulletin I25165 rev. C 03/03 Blocking Parameter ST180S Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs TJ = TJ max linear to 80% rated VDRM IDRM IRRM Max. peak reverse and off-state leakage current 30 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST180S Maximum peak gate power PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 3.0 +VGM Maximum peak positive Maximum peak negative TYP. VGT TJ = TJ max, t p ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, t p ≤ 5ms V TJ = TJ max, tp ≤ 5ms 5.0 gate voltage IGT W 20 gate voltage -VGM Units Conditions 10 MAX. DC gate current required 180 - to trigger 90 150 TJ = - 40°C 40 - TJ = 125°C DC gate voltage required 2.9 - TJ = - 40°C to trigger 1.8 3.0 1.2 - mA V TJ = 25°C Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA VGD DC gate voltage not to trigger 0.25 V TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST180S TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% Units Conditions °C 0.105 DC operation K/W 0.04 Mounting surface, smooth, flat and greased 31 (275) 24.5 Non lubricated threads Nm (lbf-in) Lubricated threads (210) wt Approximate weight Case style www.irf.com 280 g TO - 209AB (TO-93) See Outline Table 3 ST180S Series Bulletin I25165 rev. C 03/03 ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.015 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 18 0 S 20 P 0 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - P = Stud base 3/4"-16UNF2A threads 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) NOTE: For Metric device M16 x 1.5 Contact factory 4 www.irf.com ST180S Series Bulletin I25165 rev. C 03/03 Outline Table GLASS METAL SEAL 19 (0.75) MAX. 37 )M IN . 4 (0.16) MAX. 8.5 (0.33) DIA. 9 .5 (0 . 86 ) MI N. ( 0. 4.3 (0.17) DIA. FLEXIBLE LEAD 22 C.S. 25mm 2 (0.039 s.i.) 10 (0.39) RED SILICON RUBBER C.S. 0.4mm (0.0006 s.i.) RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 220 (8.66) +- 10 (0.39) RED SHRINK MAX. 28.5 (1.12) MAX. DIA. 27.5 (1.08) MAX. 16 (0.63) MAX. WHITE SHRINK 38.5 (1.52) 90 (3.54) MIN. +I 210 (8.26) Fast-on Terminals 2 SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) * FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY CERAMIC HOUSING 19 (0.75) MAX. 4 (0.16) MAX. (0.039 s.i.) RED SILICON RUBBER 10 (0.39) C.S. 0.4mm RED CATHODE 2 (0.0006 s.i.) WHITE GATE MAX. 16 (0.63) MAX. 220 (8.66) +- 10 (0.39) WHITE SHRINK 27.5 (1.08) MAX. DIA. 27.5 (1.08) MAX. RED SHRINK 38.5 (1.52) 90 (3.54) MIN. +I 210 (8.26) 22 FLEXIBLE LEAD C.S. 25mm 2 (0 .86 ) 9 .5 4.3 (0.17) DIA. MI N. (0 . 37 ) MI N. 8.5 (0.33) DIA. SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. * FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY www.irf.com 5 ST180S Series Maximum Allowable Case Temperature (°C) 130 ST180S Series RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Angle 100 30° 60° 90° 120° 90 180° 80 0 40 80 120 160 200 240 130 ST180S Series RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Period 100 90 30° 80 60° 90° 120° 180° DC 70 0 50 100 150 200 250 300 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 350 08 0. K/ W = W K/ K/ W 0.3 K/ W ta el -D 0.4 K/ W 150 Conduc tion Angle 0.5 K/ W 0.8 K/ W 1.2 K /W 100 ST180SSeries TJ = 125°C 50 R RMS Limit 0. 2 W K/ 200 0. 16 A hS Rt 250 180° 120° 90° 60° 30° 300 1 0. Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperat ure (°C) Bulletin I25165 rev. C 03/03 0 0 40 80 120 160 200 25 240 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 500 DC 180° 120° 90° 60° 30° 450 400 350 300 R 0. 1 0. 16 0.2 250 RMSLimit 200 Conduction Period 150 100 ST180SSeries TJ = 125°C 50 th SA K/ W = 0. 08 K/ W K/ W K/ W -D e lt a R 0.3 K/ W 0.4 K/ W 0.5 K/ W 0.8 K /W 1.2 K/ W 0 0 40 80 120 160 200 240 280 320 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics 6 www.irf.com ST180S Series 4800 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Bulletin I25165 rev. C 03/03 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. 4400 Initial TJ = 125°C @60 Hz 0.0083 s 4000 @50 Hz 0.0100 s 3600 3200 2800 2400 ST180SSeries 2000 1 10 100 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 5000 Of Conduc tion May Not Be Maintained. Initial TJ = 125°C 4500 No Voltage Reapplied Rated VRRM Reapplied 4000 3500 3000 2500 ST180SSeries 2000 0.01 Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 125°C 1000 ST180SSeries 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-state Voltage Drop Characteristics 1 Steady State Value RthJC = 0.105 K/ W (DC Operation) 0.1 0.01 ST180S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thJC Characteristic www.irf.com 7 ST180S Series Bulletin I25165 rev. C 03/03 Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (b) VGD IGD 0.1 0.001 0.01 (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) (1) Device: ST180SSeries 0.1 tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (2) (3) (4) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/03 8 www.irf.com