Bulletin I25163 rev. B 01/94 ST230S SERIES PHASE CONTROL THYRISTORS Stud Version Features 230A Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AB (TO-93) Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters ST230S Units 230 A 85 °C 360 A @ 50Hz 5700 A @ 60Hz 5970 A @ 50Hz 163 KA2s @ 60Hz 149 KA2s 400 to 1600 V 100 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I 2t V DRM/V RRM tq typical TJ www.irf.com case style TO-209AB (TO-93) 1 ST230S Series Bulletin I25163 rev. B 01/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code V DRM /VRRM , max. repetitive peak and off-state voltage V VRSM , maximum nonrepetitive peak voltage V 04 400 500 ST230S 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 IDRM /I RRM max. @ T J = TJ max mA 30 On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM ST230S 230 A 85 °C 360 A t = 10ms non-repetitive surge current 5970 t = 8.3ms reapplied t = 10ms 100% VRRM Maximum I2 t for fusing A Maximum I2 √t for fusing V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage t = 8.3ms reapplied Sinusoidal half wave, 163 t = 10ms No voltage Initial TJ = TJ max. 148 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2 s rt 2 1630 KA2 √s High level value of on-state slope resistance t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.92 V (I > π x IT(AV)),TJ = TJ max. 0.98 Low level value of on-state slope resistance No voltage 5000 105 rt 1 DC @ 78°C case temperature 5700 115 I2 √ t 180° conduction, half sine wave Max. peak, one-cycle 4800 I 2t Units Conditions (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.88 mΩ (I > π x IT(AV)),TJ = TJ max. 0.81 VTM Max. on-state voltage 1.55 IH Maximum holding current 600 IL Max. (typical) latching current 1000 (300) V Ipk= 720A, TJ = TJ max, tp = 10ms sine pulse mA T J = 25°C, anode supply 12V resistive load Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current ST230S 1000 Units Conditions A/µs Gate drive 20V, 20Ω, tr ≤ 1µs T J = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di /dt = 1A/µs td Typical delay time g 1.0 µs t q Typical turn-off time 100 V = 0.67% VDRM, TJ = 25°C d ITM = 300A, T J = TJ max, di/dt = 20A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs p 2 www.irf.com ST230S Series Bulletin I25163 rev. B 01/94 Blocking Parameter ST230S Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs TJ = TJ max. linear to 80% rated VDRM IDRM IRRM Max. peak reverse and off-state leakage current 30 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST230S Maximum peak gate power 10.0 PG(AV) Maximum average gate power IGM Max. peak positive gate current +VGM Maximum peak positive 3.0 Maximum peak negative DC gate current required to trigger VGT DC gate voltage required to trigger VGD TYP. MAX. 180 - 90 150 40 - 2.9 - 1.8 3.0 A T J = TJ max, t ≤ 5ms V TJ = TJ max, t ≤ 5ms p p T J = - 40°C mA 10 0.25 T J = 25°C T J = 125°C T J = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied T J = 25°C T J = 125°C - DC gate current not to trigger DC gate voltage not to trigger p 5.0 1.2 IGD T J = TJ max, t ≤ 5ms T J = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 2.0 gate voltage -V GM Units Conditions mA V TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST230S TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% Units Conditions °C 0.10 DC operation K/W 0.04 Mounting surface, smooth, flat and greased 31 (275) 24.5 Non lubricated threads Nm (lbf-in) Lubricated threads (210) wt Approximate weight Case style www.irf.com 280 g TO - 209AB (TO-93) See Outline Table 3 ST230S Series Bulletin I25163 rev. B 01/94 ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 23 0 S 16 P 0 1 2 3 4 5 6 7 1 - 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - P = Stud base 16UNF threads 7 - 8 9 Thyristor M = Stud base metric threads (M16 x 1.5) 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 8 - 9 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST230S Series Bulletin I25163 rev. B 01/94 Outline Table GLASS METAL SEAL 19 (0.75) MAX. 37 )M IN . 4 (0.16) MAX. 8.5 (0.33) DIA. .86 ) MI N. 9 .5 ( 0. 4.3 (0.17) DIA. (0 FLEXIBLE LEAD 22 C.S. 25mm 2 (0.039 s.i.) 10 (0.39) RED SILICON RUBBER C.S. 0.4mm (0.0006 s.i.) RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 220 (8.66) +- 10 (0.39) RED SHRINK MAX. 28.5 (1.12) MAX. DIA. 27.5 (1 .08) MAX. 16 (0.63) MAX . WHITE SHRINK 38.5 (1.52) 90 (3.54) MIN. +I 210 (8.26) Fast-on Terminals 2 SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) * FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX. CERAMIC HOUSING 19 (0.75) MAX. N. 4 (0.16) MAX. 7) MI 8.5 (0.33) DIA. (0.8 6) (0.039 s.i.) RED SILICON RUBBER 10 (0.39) C.S. 0.4mm 2 RED CATHODE (0.0006 s.i.) WHITE GATE 220 (8.66) +- 10 (0.39) WHITE SHRINK MAX. 27.5 (1.08) MAX. DIA. 27.5 (1.08) MAX. 16 (0.63) MAX. RED SHRINK 38.5 (1 .52) 90 (3.54) MIN. +I 210 (8. 26) 22 FLEXIBLE LEAD C.S. 25mm 2 MI N. 9.5 (0 .3 4.3 (0.17) DIA. SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. * FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX. www.irf.com 5 ST230S Series Bulletin I25163 rev. B 01/94 Outline Table GLASS-METAL SEAL 22 (0.89) FLAG TERMINALS 14 (0.55) DIA. 28.5 (1.12) MAX. 1 6 (0.63 ) MAX . 3 8.5 (1.5 2) MAX . 1.5 (0.06) DIA. 2 7.5 (1 .08 ) MAX . 80 (3 .1 5) MAX . 1 3 (0 .51 ) DIA. 6.5 (0.25) SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) 3 (0.12) CERAMIC HOUSING 22 (0.89) FLAG TERMINALS DIA. 6.5 (0.25) DIA. 27.5 (1.08) MAX. 16 (0.63) MAX. 38.5 (1.52) MAX. 1.5 (0.06) DIA. 27.5 (1.08) MAX. 80 (3.15) M AX. 13 (0.51) 14 (0.55) SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3 (0.12) 6 www.irf.com ST230S Series Maximum Allowable Case Tem perature (°C) 130 ST230S Series R thJC (DC) = 0.1 K/W 120 110 Conduction Angle 100 90 60° 90° 120° 30° 180° 80 0 50 100 150 200 250 130 ST230S Series R thJC (DC) = 0.1 K/W 120 110 Conduction Period 100 90 30° 80 60° 90° 120° DC 180° 70 0 100 200 300 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 400 350 = 8 0 .0 K/ W A 0. 2 W K/ K/ 0. 3 W K/ W 0 .4 K/W 0. 5 K /W R 150 ta el -D RMS Limit hS R t 200 0. 16 W K/ 250 180° 120° 90° 60° 30° 300 1 0. Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I25163 rev. B 01/94 Conduction Angle 0 .8 K/ W 1.2 K / W 100 ST230S Series T J = 125°C 50 0 50 0 100 150 200 250 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 450 DC 180° 120° 90° 60° 30° 400 200 RMS Limit Conduction Period 150 100 ST230S Series TJ = 125°C 50 K/ W R 250 K/ W ta el -D 0.2 W K/ 0. 16 th SA K/ W 08 0. 300 0. 1 = 350 R Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 0.3 K/W 0.4 K/ W 0 .5 K/ W 0.8 K/W 1.2 K/W 0 0 50 100 150 200 250 300 350 400 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics www.irf.com 7 ST230S Series 5500 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Bulletin I25163 rev. B 01/94 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 5000 4500 4000 3500 3000 2500 ST230S Series 2000 1 10 100 6000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C 5000 No Voltage Reapplied Rated VRRMReapplied 4500 5500 4000 3500 3000 ST230S Series 2500 2000 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 125°C 1000 ST230S Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 7 - On-state Voltage Drop Characteristics 1 Steady State Value R thJC = 0.1 K/W (DC Operation) 0.1 0.01 ST230S Series 0.001 0.001 0.01 0. 1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic 8 www.irf.com ST230S Series Bulletin I25163 rev. B 01/94 100 VGD IGD 0.1 0.001 0.01 (1) PGM (2) PGM (3) PGM (4) PGM tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (1) Device: ST230S Series 0.1 = 10W, = 20W, = 40W, = 60W, Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 µs (b) (2) (3) (4) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 9