PD- 91873 IRFC240 HEXFET® Power MOSFET Die in Wafer Form D 200 V Size 4.0 Rds(on)=0.18Ω 5" Wafer G S Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 200V Min. 0.180Ω Max. 2.3V Min., 4.0V Max. 25µA Max. ± 10µA Max. 125°C Max. Test Conditions VGS = 0V, ID = 100µA VGS = 10V, ID = 10A VDS = VGS, ID = 250µA VDS = 200V, VGS = 0V, TJ = 25°C VGS = ±20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Recommended Die Attach Conditions Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° ) 99% Al, 1% Si (0.004 mm) 0.147" x 0.201" ( 3.73mm x 5.11 mm) 125mm with 100 flat 0.375mm + / -0.020mm 01-5331 0.084 mm 0.51mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Reference Standard IR packaged part ( for design ) : IRF640 Die Outline 3/23/99