Si1901DL New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET VDS (V) –20 rDS(on) () ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability and Date Code Part # Code Top View Parameter Symbol Limit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150C) 150 C)a TA = 25C TA = 70C Pulsed Drain Current ID IDM TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range PD Unit V –180 –140 mA A –500 0.20 0.13 W TJ, Tstg –55 to 150 C Symbol Limit Unit RthJA 625 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 71304 S-01886—Rev. A, 28-Aug-00 www.vishay.com 1 Si1901DL New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = –10 mA –20 –24 VGS(th) VDS = VGS, ID = –50 mA –0.4 –0.9 –1.5 IGSS VDS = 0 V, VGS = 8 V 2 100 VDS = –20 V, VGS = 0 V –0.001 –100 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS V VDS = –20 V, VGS = 0 V, TJ = 55C ID(on) –1 VGS –4.5 V, VDS = –8.0 V –400 VGS –2.5 V, VDS = –5.0 V –120 2.6 3.8 –75 mA 4.0 5.0 gfs VDS = –2.5 V, ID = –50 mA 200 VSD IS = –50 mA, VGS = 0 V –0.7 –1.2 350 450 VGS = –2.5 V, ID = mA mA VGS = –4.5 V, ID = –180 mA rDS(on) DS( ) nA W mS V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –5.0 5 0 V, V VGS = –4.5 45V V, ID = –100 100 mA A pC C 25 125 20 VDS = –5.0 MHz 5 0 V, V VGS = 0 V, V f = 1 MH pF F 14 5 Switchingb, c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) 7 12 tr 25 35 19 30 9 15 td(off) VDD = –3.0 30V V,, RL = 100 W ID = –0.25 0 25 A, A VGEN = –4.5 45V V, RG = 10 W tf ns Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 71304 S-01886—Rev. A, 28-Aug-00 Si1901DL New Product Vishay Siliconix Output Characteristics Transfer Characteristics 0.5 1.2 0.4 I D – Drain Current (A) I D – Drain Current (A) TC = –55C 5V 1.0 4.5 V 0.8 4V 0.6 3.5 V 3V 0.4 2.5 V 0.2 25C 0.3 125C 0.2 0.1 2V 0 0 0 1 2 3 0 4 0.5 VDS – Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.5 3.0 Capacitance 45 36 6 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 2.0 VGS – Gate-to-Source Voltage (V) 8 VGS = 2.5 V 4 VGS = 4.5 V 27 Ciss 18 Coss 2 9 0 Crss 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 3 Gate Charge 10 1.6 r DS(on) – On-Resistance () (Normalized) VDS = 6 V ID = 80 mA 8 6 4 2 0 0 100 200 300 400 Qg – Total Gate Charge (pC) Document Number: 71304 S-01886—Rev. A, 28-Aug-00 6 9 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) V GS – Gate-to-Source Voltage (V) 1.5 500 600 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 180 m A 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com 3 Si1901DL New Product Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 6 1 5 r DS(on) – On-Resistance ( W ) I S – Source Current (A) TJ = 150C 0.1 TJ = 25C 0.01 4 ID = 180 mA 3 2 1 0 0.001 0.00 0.5 01 1 1.5 1.5 VSD – Source-to-Drain Voltage (V) 2.0 2.5 3.0 3.5 4.0 4.5 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = 50 mA V GS(th) Variance (V) 0.2 0.1 0.0 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 TJ – Temperature (C) www.vishay.com 4 Document Number: 71304 S-01886—Rev. A, 28-Aug-00