isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 18 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ -55~150 ℃ ID Ptot Tj Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF640 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 10A IGSS Gate Source Leakage Current IDSS VSD MIN MAX 200 V 4 V 0.18 Ω VGS= ±20V;VDS= 0 ±100 nA Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 200 uA Diode Forward Voltage IF= 18A; VGS=0 2.0 V isc Website：www.iscsemi.cn 2 UNIT