IRF AUIRS2016S

January 26 2009
Automotive Grade
AUIRS2016S(TR)
Features
•
•
•
•
•
•
•
Leadfree, RoHS compliant
Automotive qualified*
One high side output and internal low side Vs
recharge.
CMOS Schmitt trigger inverted input with pull up
resistor
CMOS Schmitt trigger inverted reset with pull
down resistor
5V compatible logic level inputs
Immune to –Vs spike and tolerant to dVs/dt
Typical Applications
•
Common-rail magnetic valve application
High Side Driver with Internal Vs Recharge
Product Summary
Low side input, high side
driver with Vs recharge
Topology
VOFFSET
150 V
VOUT
4.4 V – 20 V
Io+ & I o- (typical)
0.25 A
tON & tOFF (typical)
150 ns
Deadtime DTON /
DTOFF (typical)
70ns / 6 us
Package Options
8 - Lead SOIC
AUIRS2016S
Typical Connection Diagram
* Qualification standards can be found on IR’s web site ww.irf.com
© 2008 International Rectifier
AUIRS2016S(TR)
Table of Contents
Page
Description
3
Qualification Information
4
Absolute Maximum Ratings
5
Recommended Operating Conditions
6
Electrical Characteristics
7
Functional Block Diagram
11
Input/Output Pin Equivalent Circuit Diagram
12
Lead Definitions
13
Lead Assignments
13
Application Information and Additional Details
14
Package Details
20
Tape and Reel Details
21
Part Marking Information
22
Ordering Information
23
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© 2008 International Rectifier
2
AUIRS2016S(TR)
Description
The AUIRS2016 is a high voltage power MOSFET and IGBT high side driver with internal VS-to-GND recharge
NMOS. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The logic input is compatible with standard 5V CMOS or LSTTL logic. The output driver features a 250mA high
pulse current buffer stage. The channel can be used to drive an N-channel power MOSFET or IGBT in the high
side configuration, which operates up to 150 volts above GND ground.
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© 2008 International Rectifier
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AUIRS2016S(TR)
Qualification Information†
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
IC Latch-Up Test
RoHS Compliant
Automotive
(per AEC-Q100††)
Comments: This family of ICs has passed an Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
MSL3††† 260°C
SOIC8
(per IPC/JEDEC J-STD-020)
Class M1
(per AEC-Q100-003)
Class H2
(per AEC-Q100-002)
Class C5
(per AEC-Q100-011)
Class II, Level A
(per AEC-Q100-004)
Yes
†
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
†† Exceptions to AEC-Q100 requirements are noted in the qualification report.
††† Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
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© 2008 International Rectifier
4
AUIRS2016S(TR)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to GND, all currents are defined positive into any lead.
An operation above the absolute maximum limit is not implied and could damage the part.
Symbol
VBS
VB
VS
VHO
VCC
VIN
IIN
VRES
VESD
VCDM
dV/dt
TJ
TS
Definition
Min.
Max.
Units
High Side Floating Supply Voltage
High Side Driver Output Stage Voltage,
Neg. transient: 0.5 ms, external MOSFET off
High Side Floating Supply Offset Voltage
Neg. transient 0.4 µs
Output Voltage Gate Connection
Supply Voltage
Input Voltage
Input Injection Current. Full function, no latch-up;
(guaranteed by design). Test at 5V and 7V on Eng. Samples.
Reset Input Voltage
Electrostatic Discharge Voltage(Human body model)
Charge Device Model CDM, EOS/ESD Ass. Std 5.3.
Number of discharges per pin: 6
Allowable Offset Voltage Slew Rate
Junction Temperature
Storage Temperature
-0.3
-5.0
20
166
V
V
-8.0
150
V
VS – 0.3
-0.3
-0.3
---
VB + 0.3
20
VCC + 0.3
+1
V
V
V
mA
-0.3
2k
2K
VCC + 0.3
V
V
V
-50
-55
-55
50
150
150
V/nsec
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ºC
© 2008 International Rectifier
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AUIRS2016S(TR)
Recommended Operating Conditions
For proper operations the device should be used within the recommended conditions.
Symbol
Definition
Min.
Max.
Units
VB 1)
High Side Driver Output Stage Voltage
VS+4.4
VS+20
V
VS
High Side Floating Supply Offset Voltage
-3
150
V
VHO
Output Voltage Gate
VS
VB
V
VCC
Supply Voltage
4.4
6.5
V
VIN
Input Voltage
0
VCC
V
VRES
Reset Input Voltage
0
VCC
V
-40
125
ºC
Ta
Ambient Temperature (VBS =14V¸load: 50 Ohm 2.5nF
into VS)
2)
fs
Switching frequency
--200
kHz
3)
tinlowmin
Minimum low input width
1000
--ns
3)
tinlhighin
Minimum high input width
60
--ns
1) Reset-logic functional for VBS > 2V
2) Duty cycle = 0.5, VBS = 7 V
3) Guaranteed by design. Pulse width below the specified values may be ignored. Output will either follow the
input or will ignore it. No false output state is guaranteed when minimum input width is smaller than tin.
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© 2008 International Rectifier
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AUIRS2016S(TR)
Electrical Characteristics
Unless otherwise specified, VCC = 5V, VBS = 7V, VS = 0V, IN = 0V, RES = 5V, load R = 50Ω, C = 2.5nF.
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤
125°C.
Symbol
Definition
Min
Typ
Max
Units
Test Conditions
VCC Supply Characteristics
VCCUV+ VCC Supply Undervoltage
4.3
VCC rising from 0V
V
Positive Going Threshold
VCCUV- VCC Supply Undervoltage
2.8
Vcc dropping from 5V
Negative Going Threshold
VCCUVH VCC Supply Undervoltage
0.02
0.3
0.60
YS
Lockout Hysteresis
tdUVCC Undervoltage Lockout
0.5
20
VCC steps either from 6.5V to
μsec
Response Time
2.7V or from 2.7V to 6.5V
IQCC
VCC Supply Current
400
uA
VCC = 3.6V & 6.5V
VBS Supply Characteristics
VBSUV+ VBS Supply Undervoltage
Positive Going Threshold
VBSUV- VBS Supply Undervoltage
Negative Going Threshold
VBSUVH VBS Supply Undervoltage
YS
Lockout Hysteresis
tdUVBS Undervoltage Lockout
Response Time
IQBS1
VBS Supply Current
4.3
VBS rising from 0V
V
2.8
0.02
VBS dropping from 5V
0.3
0.5
0.60
20
μsec
130
μA
IQBS2
VBS Supply Current
200
μA
ΔVBS
VBS Drop Due to Output
Turn-On
210
mV
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VBS steps either from 6.5V to
2.7V or from 2.7V to 6.5V
static mode, VBS = 7V, IN = 0V
or 5V
static mode, VBS = 16V, IN =
0V or 5V
VBS = 7V, CBS = 1μF, tdIG-IN
= 3μsec, tTEST = 100μsec
© 2008 International Rectifier
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AUIRS2016S(TR)
Electrical Characteristics
Unless otherwise specified, VCC = 5V, VBS = 7V, VS = 0V, IN = 0V, RES = 5V, load R = 50Ω, C = 2.5nF.
Unless otherwise noted, these specifications apply for an operating junction temperature range of 40°C ≤ Tj ≤ 125°C.
Symbol
Definition
Gate Driver Characteristics
IPKSo1
Peak Output Source Current
Min
Typ
Max
Units
Test Conditions
120
250
mA
Tj = 25°C,
(Note 2)
IPKSo2
Peak Output Source Current
70
150
mA
(Note 2)
IPKSo3
Peak Output Source Current
250
500
mA
VBS = 16V, Tj = 25°C
IPKSo4
Peak Output Source Current
150
300
mA
VBS = 16V
tr1
HO off-state leakage current
(guaranteed by design)
Output Rise Time
tr2
IHO,off
††
††
1
uA
0.2
0.4
μsec
Output Rise Time
0.3
0.5
μsec
tr3
Output Rise Time
0.1
0.2
μsec
VBS = 16V, Tj = 25°C
tr4
Output Rise Time
0.15
0.3
μsec
VBS = 16V
IPKSi1
Peak Output Sink Current
120
250
mA
IN = 5V, Tj = 25°C
IPKSi2
Peak Output Sink Current
70
150
mA
IN = 5V,
IPKSi3
Peak Output Sink Current
250
500
mA
VBS = 16V, IN = 5V, Tj = 25°C,
IPKSi4
Peak Output Sink Current
150
300
mA
VBS = 16V, IN = 5V
tf1
Output Fall Time
0.2
0.4
μsec
IN = 5V, Tj = 25°C
tf2
Output Fall Time
0.3
0.5
μsec
IN = 5V
tf3
Output Fall Time
0.1
0.2
μsec
VBS = 16V, IN = 5V, Tj = 25°C
tf4
Output Fall Time
†† PW<10us
0.15
0.3
μsec
VBS = 16V, IN = 5V
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Tj = 25°C
††
(Note 2)
(Note 2)
††
© 2008 International Rectifier
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AUIRS2016S(TR)
Electrical Characteristics
Unless otherwise specified, VCC = 5V, VBS = 7V, VS = 0V, IN = 0V, RES = 5V, load R = 50Ω, C = 2.5nF.
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤
125°C.
Symbol
Definition
Min
Typ
Max
Units
Test Conditions
tplh
Input-to-Output Turn-On
0.15
0.35
μsec
Propagation Delay (50% input
level to 10% output level)
tphl
Input-to-Output Turn-Off
0.15
0.35
μsec
Propagation Delay (50% input
level to 90% output level)
0.15
0.35
tphl_res
RES-to-Output Turn-Off
μsec
Propagation Delay (50%
input level to 90% [tphl]
output levels)
tplh_res
RES-to-Output Turn-On
0.15
0.35
μsec
Propagation Delay (50%
input level to 10% [tplh]
output levels)
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© 2008 International Rectifier
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AUIRS2016S(TR)
Electrical Characteristics
Unless otherwise specified, VCC = 5V, VBS = 7V, VS = 0V, IN = 0V, RES = 5V, load R = 50Ω, C = 2.5nF.
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤
125°C.
Symbol
Definition
Min
Typ
Max
Units
Test Conditions
Input Characteristics
VINH
High Logic Level Input
0.6*
V
VCC=5V
Threshold
Vcc
VINL
Low Logic Level Input
0.28*
V
VCC=5V
Threshold
Vcc
RIN
High Logic Level Input
60
100
220
kΩ
Resistance
IIN
High Logic Level Input
5
VIN=VCC
μA
Current
VH_RES High Logic Level RES Input
3
V
VCC=5V
Threshold
VL_RES Low Logic Level RES Input
1.4
V
VCC=5V
Threshold
RRES
High Logic Level RES Input
60
100
220
kΩ
Resistance
IRES
Low Logic Level Input
5
VRES=0
μA
Current
Recharge Characteristics
ton_rech Recharge Transistor Turn3
6
9
VS = 5V
μsec
On Propagation Delay
toff_rech Recharge Transistor Turn0.08
0.2
μsec
Off Propagation Delay
VRECH
Recharge Output Transistor
1.2
V
IS = 1mA, IN = 5V.
On-State Voltage Drop
Deadtime Characteristics
DTHOFF High Side Turn-Off to
3
6
9
VCC = 5V, VBS = 7V
μsec
Recharge gate Turn-On
DTHON Recharge gate Turn-Off to
0.01
0.07
0.4
VCC = 5V, VBS = 7V
μsec
High Side Turn-On
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AUIRS2016S(TR)
Functional Block Diagram
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AUIRS2016S(TR)
Input/Output Pin Equivalent Circuit Diagrams
VB
ESD
Diode
HO
RESD
ESD
Diode
VS
GND
VB
VCC
VB
20V
20V
166V
GND
VS
GND
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© 2008 International Rectifier
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AUIRS2016S(TR)
Lead Definitions
Pin Number
Symbol
Pin description
1
VCC
2
IN-
3
GND
4
RESET-
5
VS
MOSFET Source Connection
6
NC
No Connection (no Bondwire)
7
HO
MOSFET Gate Connection
8
VB
Driver Output Stage Supply
Driver Supply, typically 5.0V
Driver Control Signal Input (negative logic)
Ground
Driver Enable Signal Input (negative logic)
Lead Assignments
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© 2008 International Rectifier
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AUIRS2016S(TR)
Application Information and Additional Details
A Truth table for Vcc, VBS, RESET, IN, HO and RechFET is shown as follows. This truth table is for ACTIVE
LOW IN.
supply voltages and
thresholds
Signals
Output
Ho
Recharge Path
Vcc
VBS
RESET-
IN-
< VCCUV-
X
X
X
OFF
ON
X
X
LOW
X
OFF
ON
X
X
X
HIGH
OFF
ON
> VCCUV+
> VBSUV+
HIGH
LOW
ON
OFF
> VCCUV+
< VBSUV-
HIGH
LOW
OFF
OFF
X means independent from signal
RESET = HIGH indicates that high side NMOS is allowed to be turned on.
RESET = LOW indicates that high side NMOS is OFF.
IN = LOW indicates that high side NMOS is on.
IN = HIGH indicates that high side NMOS is off.
RechFET = ON indicates that the recharge MOSFET is on.
RechFET = OFF indicates that the recharge MOSFET is off.
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AUIRS2016S(TR)
Timing Diagrams
Input / Output
Figure 3: Input/Output Timing Diagram
Reset
Figure 4: Reset Timing Diagram
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© 2008 International Rectifier
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AUIRS2016S(TR)
Performance Graphs
RESET Functionality Graph:
VBS (V)
RESET Functionality Graph
25
23
21
19
17
15
13
11
9
7
5
3.2
3.4
3.6
3.8
4.0
4.2 4.4
4.6
4.8
5.0
5.2
VCC (V)
25C
-40C
125C
Figure 6. RESET Functionality:
This graph explains the functionality limitation as a function of VCC, VBS and temperature.
For each particular temperature and VCC, the output is non-functional for any value of VBS above the drawn
curve. But for any value of VBS below the curve the functionality is fine.
RESET Functional Diagram:
The diagram is guaranteed for the following condition:
VCC=4.28V to 20V; VBS= 2V to 20V @ Tj= -40°C to +125°C (TBD)
IN-
RESET -
HO-VS: -40C
HO-VS: 25C
HO-VS: 125C
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© 2008 International Rectifier
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AUIRS2016S(TR)
Input and Reset Thresholds:
Vinth+ vs VCC supply
Vinth+ (V)
4
3.5
3
2.5
2
4
4.5
5
5.5
6
6.5
7
VCC (V)
25C
-40C
125C
Figure 7-1: Positive Input and Reset Threshold Voltage Distribution Curves
Vinth(-) vs VCC supply
3
Vinth(-) (Volt)
2.8
2.6
2.4
2.2
2
1.8
1.6
4
4.5
5
5.5
6
6.5
7
VCC (Volt)
25C
-40C
125C
Figure 7-2: Negative Input and Reset Threshold Voltage Distribution Curves
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AUIRS2016S(TR)
VBUV Undervoltage Shutdown Threshold VB: TBD
IRS2016: UVBS+ vs Temp
4.0
UVBS Threshold
3.8
3.6
3.4
3.2
3.0
2.8
-50
-25
0
25
50
75
100
125
150
Tem p
Figure 8-1: Positive going VBUV value vs. Temperature: TBD
IRS2016: UVBS- vs Temp
UVBS Threshold
4.0
3.8
3.6
3.4
3.2
3.0
2.8
-50
-25
0
25
50
75
100
125
150
Temp
Figure 8-2: Negative going VBUV Value vs. Temperature
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AUIRS2016S(TR)
Input and Reset Impedance
Input and Reset Impedance
RIN (Kohm)
250
200
150
100
50
0
-50
-30
Example
-10
10
30
50
70
90
110
130
T(C)
RIN MAX
RIN
RIN MIN
Figure 9: Input and Reset Impedance Distribution Curves
Recharge FET I-V Curve at -40C, 25C and 125C
I_current (mA)
V_Recharge FET IV-Curve
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V_RECH (V)
25C
-40C
125C
Figure 10: Recharge FET IV-Curve
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AUIRS2016S(TR)
Package Details: SOIC8
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© 2008 International Rectifier
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AUIRS2016S(TR)
Tape and Reel Details: SOIC8
LOADED TAPE FEED DIRECTION
A
B
H
D
F
C
NOTE : CONTROLLING
DIMENSION IN MM
E
G
CARRIER TAPE DIMENSION FOR 8SOICN
Metric
Imperial
Code
Min
Max
Min
Max
A
7.90
8.10
0.311
0.318
B
3.90
4.10
0.153
0.161
C
11.70
12.30
0.46
0.484
D
5.45
5.55
0.214
0.218
E
6.30
6.50
0.248
0.255
F
5.10
5.30
0.200
0.208
G
1.50
n/a
0.059
n/a
H
1.50
1.60
0.059
0.062
F
D
C
B
A
E
G
H
REEL DIMENSIONS FOR 8SOICN
Metric
Code
Min
Max
A
329.60
330.25
B
20.95
21.45
C
12.80
13.20
D
1.95
2.45
E
98.00
102.00
F
n/a
18.40
G
14.50
17.10
H
12.40
14.40
Imperial
Min
Max
12.976
13.001
0.824
0.844
0.503
0.519
0.767
0.096
3.858
4.015
n/a
0.724
0.570
0.673
0.488
0.566
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© 2008 International Rectifier
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AUIRS2016S(TR)
Part Marking Information
Part number
ASxxxxx
Date code
AYWW ?
IR logo
Pin 1
Identifier
?
MARKING CODE
P
Lead Free Released
? XXXX
Lot Code
(Prod mode –
4 digit SPN code)
Assembly site code
Per SCOP 200-002
Non-Lead Free Released
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© 2008 International Rectifier
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AUIRS2016S(TR)
Ordering Information
Standard Pack
Base Part Number
AUIRS2016S(TR)
Package Type
SOIC8
Complete Part Number
Form
Quantity
Tube/Bulk
95
AUIRS2016S
Tape and Reel
2500
AUIRS2016STR
The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no
responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any infringement
of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or
otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are subject to
change without notice. This document supersedes and replaces all information previously supplied.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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© 2008 International Rectifier
23