BF2030... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Drain G2 G1 AGC RF Input RG1 RF Output + DC GND VGG ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type Package Pin Configuration Marking BF2030 SOT143 1= S 2=D 3=G2 4=G1 - - NDs BF2030R SOT143R 1= D 2=S 3=G1 4=G2 - - NDs BF2030W SOT343 1= D 2=S 3=G1 4=G2 - - NDs Maximum Ratings Parameter Symbol Value Drain-source voltage VDS Continuous drain current ID 40 Gate 1/ gate 2-source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 6 Total power dissipation Ptot 8 V mA V mW TS ≤ 76 °C, BF2030, BF2030R 200 TS ≤ 94 °C, BF2030W 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 1Pb-containing Unit °C package may be available upon special request 1 2007-04-20 BF2030... Thermal Resistance Parameter Symbol Channel - soldering point 1) Rthchs Value Unit K/W BF2030/ BF2030R ≤370 BF2030W ≤280 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DS 10 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 +IG2SS - - 50 IDSS - - 50 µA IDSX - 12 - mA VG1S(p) 0.3 0.5 - V VG2S(p) 0.3 0.6 - DC Characteristics Drain-source breakdown voltage V ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current nA VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 2007-04-20 BF2030... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter AC Characteristics Unit min. typ. max. 27 31 - mS Cg1ss - 2.4 2.8 pF Cdss - 1.3 - 20 23 - dB - 1.5 2.2 dB 40 50 - (verified by random sampling) Forward transconductance gfs VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Output capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Power gain Gp VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure F VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz ∆G p Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz 3 2007-04-20 BF2030... Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BF2030, BF2030R BF2030W 220 220 mA 180 180 160 160 P tot P tot mW 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 75 90 105 120 °C TS 150 TS Drain current ID = ƒ(IG1) Output characteristics ID = ƒ(V DS) VG2S = 4V VG2S = 4V VG1S = Parameter 20 28 mA mA 1.4V 24 16 22 1.3V 14 18 ID ID 20 12 16 1.2V 10 14 12 8 1.1V 10 8 6 6 4 1V 4 0 0 0.8V 2 2 10 20 30 40 50 60 70 80 µA 0 0 100 IG1 1 2 3 4 5 6 7 8 V 10 VDS 4 2007-04-20 BF2030... Gate 1 current IG1 = ƒ(V G1S) Gate 1 forward transconductance VDS = 5V g fs = ƒ(ID) VDS = 5V, VG2S = Parameter VG2S = Parameter 40 210 µA 4V mS 4V 180 3.5V 165 3V 30 g fs I G1 150 135 3V 120 25 2.5V 20 105 90 2.5V 60 2V 15 75 2V 10 45 30 5 15 0 0 0.4 0.8 1.2 1.6 2 V 2.4 0 0 3 4 8 12 16 24 mA 20 VDS Drain current ID = ƒ(VG1S) VDS = 5V Drain current ID = ƒ(V GG) VDS = 5V, VG2S = 4V, RG1 = 100kΩ VG2S = Parameter (connected to VGG, V GG=gate1 supply voltage) 30 mA 30 ID 13 mA 4V 11 24 10 3V 22 9 ID ID 20 18 8 7 16 2V 14 6 12 5 10 4 1.5V 8 3 6 2 4 1 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 0 0 2 VG1S 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGG 5 2007-04-20 BF2030... Drain current ID = ƒ(VGG) Crossmodulation Vunw = (AGC) VG2S = 4V VDS = 5 V RG1 = Parameter in kΩ 120 28 mA dBµV 70 24 80 22 110 V unw 20 ID 100 18 105 120 16 100 14 12 95 10 8 90 6 4 85 2 0 0 1 2 3 4 5 6 V 80 0 8 VGG=VDS 10 20 30 40 dB 55 AGC 6 2007-04-20 BF2030... Cossmodulation test circuit VAGC VDS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased 7 2007-04-20 Package SOT143 BF2030... 2 0.1 MAX. 10˚ MAX. 1 1 ±0.1 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 A 5 0...8˚ 0.2 M A 0.25 M B 1.7 0.08...0.1 1.3 ±0.1 3 2.4 ±0.15 4 B 10˚ MAX. 2.9 ±0.1 1.9 0.15 MIN. Package Outline Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 1.2 0.8 0.8 Marking Layout (Example) RF s 56 Manufacturer Pin 1 2005, June Date code (YM) BFP181 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 8 2007-04-20 Package SOT143R BF2030... Package Outline 2 0.2 0.08...0.15 A +0.1 0.8 -0.05 0.4 +0.1 -0.05 0˚... 8˚ 1.7 0.25 10˚ MAX. 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1.9 4 1 ±0.1 0.15 MIN. 2.9 ±0.1 M 0.2 M A B Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 9 2007-04-20 Package SOT343 BF2030... Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 10 2007-04-20 BF2030... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2007-04-20