INFINEON BF999_07

BF999
Silicon N-Channel MOSFET Triode
• For high-frequency stages up to 300 MHz
2
3
preferably in FM applications
1
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
BF999
LBs
Pin Configuration
1=G
2=D
3=S
-
-
Package
-
SOT23
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
20
V
Continuous drain current
ID
30
mA
Gate-source peak current
± IGSM
10
mA
Total power dissipation
Ptot
200
mW
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
Value
Unit
TS ≤ 76 °C
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Channel - soldering point2)
Rthchs
≤ 370
K/W
1Pb-containing
2For
package may be available upon special request
calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-04-20
BF999
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
V(BR)DS
20
-
-
±V(BR)GSS
6.5
-
12
± IGSS
-
-
50
nA
IDSS
5
10
16
mA
-VGS(p)
-
0.8
1.5
V
DC Characteristics
Drain-source breakdown voltage
V
ID = 10 µA, -VGS = 4 V
Gate-source breakdown voltage
± IGS = 10 mA, VDS = 0
Gate-source leakage current
± V GS = 5 V, V DS = 0
Drain current
VDS = 10 V, VGS = 0
Gate-source pinch-off voltage
VDS = 10 V, I D = 20 µA
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
14
20
-
mS
Cgss
-
2.5
-
pF
Cdss
-
0.9
-
pF
Gp
-
27
-
dB
F
-
2.1
-
dB
AC Characteristics
Forward transconductance
gfs
VDS = 10 V, I D = 10 mA
Gate input capacitance
VDS = 10 V, I D = 10 mA, f = 10 MHz
Output capacitance
VDS = 10 V, I D = 10 mA, f = 10 MHz
Power gain
VDS = 10 V, I D = 10 mA, f = 45 MHz
Noise figure
VDS = 10 V, I D = 10 mA, f = 45 MHz
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BF999
Total power dissipation Ptot = ƒ(TS)
Output characteristics ID = ƒ(V DS)
250
18
mA
0.3V
14
0.2V
12
0.1V
10
0V
ID
P tot
mW
150
-0.1V
8
100
-0.2V
6
-0.3V
4
50
-0.4V
2
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
5
10
TS
20
VDS
Gate transconductance gfs = ƒ(V GS)
Drain current ID = (V GS)
30
30
mS
mA
20
20
ID
Gfs
V
15
15
10
10
5
5
0
-1
-0.5
0
0.5
V
0
-1
1.5
VGS
V
1
VGS
3
2007-04-20
BF999
Gate input capacitance Cgss = ƒ(VGS)
Output capacitance C dss = ƒ(VDS)
3
pF
CdSS
CgSS
3
1
0
-2
pF
1
-1
V
0
0
1
VGS
5
V
15
VDS
4
2007-04-20
Package SOT23
BF999
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
5
2007-04-20
BF999
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
6
2007-04-20