SMBT3906...MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMBT3904S / U: for orientation in reel see package information below • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 SMBT3906S/U C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking SMBT3906/ MMBT3906 s2A 1=B SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1Pb-containing Pin Configuration 2=E 3=C - - Package - SOT23 package may be available upon special request 1 2008-02-29 SMBT3906...MMBT3906 Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC Total power dissipation- Ptot 200 330 TS ≤ tbd °C 250 TS ≤ 115 °C 250 TS ≤ 105 °C 330 Tj Storage temperature T stg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS 150 mA °C -65 ... 150 Value SMBT3906/ MMBT3906 ≤ 240 SMBT3906S ≤ 140 SMBT3906U ≤ 135 1For V mW TS ≤ 71 °C Junction temperature Unit Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-02-29 SMBT3906...MMBT3906 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 - - V(BR)EBO 6 - - I CBO - - 50 IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current nA VCB = 30 V, IE = 0 DC current gain1) - h FE IC = 100 µA, VCE = 1 V 60 - - IC = 1 mA, VCE = 1 V 80 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, V CE = 1 V 30 - - Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 Base emitter saturation voltage1) 1Pulse VBEsat test: t < 300µs; D < 2% 3 2008-02-29 SMBT3906...MMBT3906 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 250 - - Ccb - - 3.5 Ceb - - 10 td - - 35 tr - - 35 tstg - - 225 tf - - 75 F - - 4 AC Characteristics Transition frequency fT MHz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure dB IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ 4 2008-02-29 SMBT3906...MMBT3906 Test circuit Delay and rise time -3.0 V 275 Ω <1.0 ns +0.5 V 10 kΩ 0 C <4.0 pF -10.6 V D = 2% 300 ns EHN00059 Storage and fall time -3.0 V <1.0 ns 275 Ω +9.1 V 0 t1 -10.9 V 10 < t 1< 500 µs D = 2% 10 kΩ C 1N916 <4.0 pF EHN00060 5 2008-02-29 SMBT3906...MMBT3906 DC current gain hFE = ƒ(IC) Saturation voltage IC = ƒ(VBEsat; V CEsat) VCE = 1 V h FE = 10 EHP00774 10 1 EHP00767 2 mA h FE ΙC 5 10 2 5 125 C V BE V CE 25 C 10 0 10 1 -55 C 5 5 10 0 10 -1 -1 10 5 10 0 5 10 1 mA 10 0 2 0.2 0.4 0.6 ΙC 1.0 V 1.2 V BE sat , V CE sat Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) Total power dissipation Ptot = ƒ(TS) SMBT3906/ MMBT3906 360 8 mW pF 7 300 6.5 270 6 Ptot VCB /VEB 0.8 5.5 240 5 210 4.5 180 4 150 3.5 120 3 90 CEB 2.5 60 2 1.5 1 0 30 CCB 4 8 12 16 V 0 0 22 CCB/C EB 6 15 30 45 60 75 90 105 120 °C 150 TS 2008-02-29 SMBT3906...MMBT3906 Total power dissipation Ptot = ƒ(TS) SMBT3906S Total power dissipation Ptot = ƒ(TS) SMBT3906U 300 360 mW 250 300 225 270 200 240 P tot P tot mW 175 210 150 180 125 150 100 120 75 90 50 60 25 30 0 0 15 30 45 60 90 105 120 °C 75 0 0 150 15 30 45 60 90 105 120 °C 75 TS Permissible Puls Load R thJS = ƒ (tp) SMBT3906S Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 EHP00936 10 3 Ptot max 5 Ptot DC K/W tp tp D= T T 10 2 RthJS 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 5 10 0 10 -6 10 -5 10 -4 10 150 TS -3 10 -2 s 10 10 -1 -6 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 2008-02-29 SMBT3906...MMBT3906 Permissible Puls Load R thJS = ƒ (tp) SMBT3906U Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SMBT3906S 10 3 - K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS P totmax/P totDC 10 3 10 1 10 0 -6 10 10 2 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tp 10 0 tp Delay time t d = ƒ(I C) Rise time tr = ƒ(IC) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SMBT3906U 10 2 EHP00772 10 3 Ptotmax /PtotDC ns D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 tr td t r ,t d 10 2 h FE = 10 VCC = 3 V 15 V 40 V 10 1 V BE = 2 V 0V 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 0 10 0 tp 5 10 1 5 10 2 mA 5 10 3 ΙC 8 2008-02-29 SMBT3906...MMBT3906 Storage time t stg = ƒ(IC) Fall time t f = ƒ(IC) EHP00762 10 3 ns 25 C 125 C ns ts 25 C 125 C 10 EHP00773 10 3 tf h FE = 20 10 VCC = 40 V 2 10 2 h FE = 20 h FE = 20 10 10 1 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 10 0 0 10 3 ΙC h FE = 10 5 10 1 5 10 2 mA 5 10 3 ΙC Rise time tr = ƒ(I C) EHP00764 10 3 ns tr 25 C 10 2 VCC = 40 V h FE = 10 125 C 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC 9 2008-02-29 Package SC74 SMBT3906...MMBT3906 Package Outline B 1.1 MAX. 1 2 3 0.35 +0.1 -0.05 Pin 1 marking 0.2 B 6x M A 0.1 MAX. 0.95 0.2 1.9 1.6 ±0.1 4 10˚ MAX. 5 2.5 ±0.1 6 0.25 ±0.1 0.15 +0.1 -0.06 (0.35) 10˚ MAX. 2.9 ±0.2 (2.25) M A Foot Print 2.9 1.9 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.7 8 4 Pin 1 marking 3.15 1.15 10 2008-02-29 Package SOT23 SMBT3906...MMBT3906 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 11 2008-02-29 Package SOT363 SMBT3906...MMBT3906 Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 12 2008-02-29 SMBT3906...MMBT3906 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 2008-02-29