Bulletin I25152 rev. E 09/03 110/111RKI SERIES PHASE CONTROL THYRISTORS Stud Version Features 110A High current and high surge ratings Hermetic ceramic housing Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters 110/111RKI Units 110 A 90 °C 172 A @ 50Hz 2080 A @ 60Hz 2180 A @ 50Hz 21.7 KA2s @ 60Hz 19.8 KA2s 400 to 1200 V 110 µs - 40 to 140 °C IT(AV) @ TC IT(RMS) ITSM 2 I t V DRM /V RRM tq typical TJ www.irf.com case style TO-209AC (TO-94) 1 110/111RKI Series Bulletin I25152 rev. E 09/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code V DRM/V RRM, max. repetitive repetitive peak voltage V 400 500 40 110/111RKI VRSM , maximum non- peak and off-state voltage V 80 800 900 120 1200 1300 I DRM /I RRM max. @ TJ = TJ max. mA 20 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature 110/111RKI 110 A 90 °C I T(RMS) Max. RMS on-state current 172 I TSM Max. peak, one-cycle 2080 non-repetitive surge current 2180 I2 t Maximum I2t for fusing Units Conditions DC @ 83°C case temperature A V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 Low level value of on-state slope resistance r t2 High level value of on-state slope resistance No voltage t = 8.3ms reapplied 100% VRRM 1750 t = 10ms t = 8.3ms reapplied 21.7 t = 10ms No voltage 19.8 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2 s 14.0 Maximum I2√t for fusing t = 10ms 1830 15.3 I 2 √t 180° conduction, half sine wave 217 KA2 √s Sinusoidal half wave, Initial TJ = TJ max. t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.82 V (I > π x IT(AV)),TJ = TJ max. 1.02 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 2.16 mΩ (I > π x IT(AV)),TJ = TJ max. 1.70 V TM Max. on-state voltage 1.57 IH Maximum holding current 200 IL Typical latching current 400 V mA Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse T J = 25°C, anode supply 6V resistive load Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td Typical delay time tq Typical turn-off time 2 110/111RKI 300 Units Conditions A/µs TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g /dt = 1A/µs 1 µs 110 Gate drive 20V, 20Ω, tr ≤ 1µs Vd = 0.67% VDRM, TJ = 25°C ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 25Ω www.irf.com 110/111RKI Series Bulletin I25152 rev. E 09/03 Blocking Parameter 110/111RKI Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs TJ = TJ max. linear to 80% rated VDRM IRRM IDRM Max. peak reverse and off-state leakage current 20 mA TJ = TJ max, rated V DRM /V RRM applied Triggering Parameter PGM 110/111RKI Maximum peak gate power 12 PG(AV) Maximum average gate power 3.0 IGM Max. peak positive gate current 3.0 +VGM Maximum peak positive Maximum peak negative TYP. VGT TJ = TJ max, t p ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, t p ≤ 5ms V TJ = TJ max, tp ≤ 5ms 10 gate voltage IGT W 20 gate voltage -VGM Units Conditions MAX. DC gate current required 180 - to trigger 80 120 40 - DC gate voltage required 2.5 - to trigger 1.6 2 1 - TJ = - 40°C mA TJ = 25°C TJ = 140°C TJ = - 40°C V TJ = 25°C Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 140°C IGD DC gate current not to trigger 6.0 mA VGD DC gate voltage not to trigger 0.25 V TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter 110/111RKI TJ Max. operating temperature range -40 to 140 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% Units Conditions °C 0.27 DC operation K/W 0.1 Mounting surface, smooth, flat and greased 15.5 Non lubricated threads (137) 14 Nm (lbf-in) Lubricated threads (120) wt Approximate weight Case style www.irf.com 130 g TO - 209AC (TO-94) See Outline Table 3 110/111RKI Series Bulletin I25152 rev. E 09/03 ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.043 0.031 120° 0.052 0.053 90° 0.066 0.071 60° 0.096 0.101 30° 0.167 0.169 K/W Conditions T J = T J max. Ordering Information Table Device Code 11 1 1 2 RKI 120 3 4 1 - IT(AV) rated average output current (rounded/10) 2 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 3 - Thyristor 4 - Voltage code: Code x 10 = VRRM (See Voltage Rating Table) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 4 www.irf.com 110/111RKI Series Bulletin I25152 rev. E 09/03 Outline Table CERAMIC HOUSING N. 16.5 (0.65) MAX. 8.5 (0.33) DIA. MI 2.6 (0.10) MAX. C.S. 16mm 2 C.S. 0.4 mm . 20 FLEXIBLE L EAD RED SILICON RUBBER MI N ( 0. 79 ) 9. 5 (0 . 37 ) 4.3 (0.17) DIA. (.025 s.i.) 2 170 (6.69) 157 (6.18) (.0006 s.i.) RED CATHO DE WHITE GATE Fast-on Terminals AMP. 280000-1 REF-250 10 (0.39) RED SHRINK MAX. 22.5 (0.88) MAX. DIA. 21 (0.83) 10 (0.39) MAX. WHITE SHRINK 24 (0.94) MAX. 55 (2.16) MIN. 215 (8.46) SW 27 Case Style TO-209AC (TO-94) 1/2"-20UNF-2A All dimensions in millimeters (inches) 29.5 (1.16) MAX. 140 110/111RKI 111RKI SeriesSeries R thJC (DC) = 0.27 K/W 130 120 Conduction Angle 110 100 90° 90 30° 60° 120° 180° 80 0 20 40 60 80 100 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com 120 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) * FOR METRIC DEVICE: M12 X 1.75 CONTACT FACTORY 140 110/111RKI 111RKI SeriesSeries R thJC (DC) = 0.27 K/W 130 120 Conduction Period 110 100 30° 90 60° 90° 80 120° 180° DC 70 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 110/111RKI Series 160 K/ W W K/ K/ W -D 1K /W RMS Limit a elt 100 0. 8 0.3 120 0. 6 = 180° 120° 90° 60° 30° 140 A hS R t R Maximum Average On-state Power Loss (W) Bulletin I25152 rev. E 09/03 1.5 80 Conduction Angle 60 40 110/111RKI Series 111RKI Series /W 4 K/ W T J = 140°C 20 K/W 2K 5 K/W 0 0 20 40 60 80 100 120 0 Average On-state Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) 220 DC 180° 120° 90° 60° 30° W K/ 120 1K 100 RMS Limit 80 Conduction Period 60 110/111RKI Series 111RKI Series 40 T J = 140°C 20 K/ W R 0 .8 ta el 0. 6 -D 140 3 0. 160 = 180 SA th 200 R Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics K/ W /W 1.5 K/ W 2 K/ W 4 K/W 5 K/ W 0 0 20 40 60 80 100 120 140 160 180 0 Average On-state Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) 2000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 140°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1800 1600 1400 1200 1000 110/111RKI 111RKI SeriesSeries 800 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 6 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Fig. 4 - On-state Power Loss Characteristics 2500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 140°C 2000 No Voltage Reapplied Rated VRRMReapplied 1500 1000 110/111RKI Series 111RKI Series 500 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 110/111RKI Series Bulletin I25152 rev. E 09/03 Instantaneous On-state Current (A) 10000 TJ = 25°C 1000 TJ = 140°C 100 10 110/111RKI Series 111RKI Series 1 0 1 2 3 5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC(K/W) Fig. 7 - On-state Voltage Drop Characteristics 1 Steady State Value R thJC = 0.27 K/W (DC Operation) 0.1 0.01 110/111RKI Series 111RKI Series 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic 100 VGD IGD 0.1 0.001 0.01 (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300µs Tj=-40 °C Tj=140 °C 1 Tj=25 °C Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30ohms; tr<=0.5 µs, tp=>6µs b) Recommended load line for 10 <=30% rated di/dt: 15V, 40ohms (a) tr<=1 µs, tp=>6µs (b) (1) Device: 110/111RKI Series Device: 111RKI Series 0.1 1 (2) (3) (4) Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 7 110/111RKI Series Bulletin I25152 rev. E 09/03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03 8 www.irf.com