IPD14N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS • Logic Level RDS(on) • Low On-Resistance RDS(on) ID 30 V 13.5 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converter Type Package Ordering Code IPD14N03L P- TO252 -3-11 Q67042-S4111 Marking 14N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A 30 TC=25°C 30 I D puls 120 EAS 20 Repetitive avalanche energy, limited by Tjmax2) EAR 7 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 75 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=20A, VDD=25V, RGS=25Ω kV/µs IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-01-17 IPD14N03L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1.3 2 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 3) - - 50 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, I D=1mA Gate threshold voltage, VGS = VDS ID = 30 µA Zero gate voltage drain current µA I DSS V DS=30V, V GS=0V, Tj=25°C - 0.01 1 V DS=30V, V GS=0V, Tj=125°C - 10 100 I GSS - 1 100 nA RDS(on) - 16.1 20 mΩ RDS(on) - 10.8 13.5 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, ID=20A Drain-source on-state resistance V GS=10V, ID=20A 1Current limited by bondwire ; with an R thJC = 2K/W the chip is able to carry ID= 59A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-01-17 IPD14N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 24 48 - S pF Dynamic Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=20A Input capacitance Ciss V GS=0V, V DS=25V, - 740 990 Output capacitance Coss f=1MHz - 290 385 Reverse transfer capacitance Crss - 80 120 Gate resistance RG - 1.5 - Ω Turn-on delay time t d(on) V DD=15V, VGS=10V, - 5.9 8.9 ns Rise time tr ID=15A, - 30.4 45.6 Turn-off delay time t d(off) RG=8.5Ω - 26.6 39.9 Fall time tf - 11 21 - 2.5 3.1 - 6.2 9.3 - 10.6 13.3 - 10.24 12.8 V(plateau) V DD=15V, ID=15A - 3.4 - V IS - - 30 A - - 120 Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=15V, ID=15A V DD=15V, ID=15A, nC V GS=0 to 5V Output charge Q oss V DS=15V, ID=15A, nC V GS=0V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, I F=30A - 0.9 1.2 Reverse recovery time trr VR =-V, IF=lS, - 21.7 27.1 ns Reverse recovery charge Qrr diF /dt=100A/µs - 13.7 17.2 nC Page 3 V 2003-01-17 IPD14N03L 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC) parameter: V GS≥ 10 V IPD14N03L IPD14N03L 80 32 W A 24 ID P tot 60 50 20 40 16 30 12 20 8 10 4 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( V DS ) ZthJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 10 1 3 IPD14N03L IPD14N03L K/W A 10 0 D ZthJC tp = 5.7µs /I 10 2 DS (on ) = V ID DS 10 µs R 10 -1 100 µs D = 0.50 0.20 10 1 0.10 1 ms 10 -2 0.05 single pulse 0.02 0.01 10 ms DC 10 0 -1 10 10 0 10 1 V 10 2 VDS 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2003-01-17 IPD14N03L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS 75 IPD14N03L Ptot = 75W 50 A mΩ k j ID 55 50 45 i 40 35 h 30 g 25 f 2.6 b 2.8 c 3.0 d 3.2 e 3.4 f 3.6 g 3.8 h 4.0 i 4.2 j 4.5 k 10.0 h i j 35 30 25 20 15 f 20 g 40 RDS(on) VGS [V] a 60 k 15 10 e 10 VGS [V] = d 5 c 5 0 0 IPD14N03L a 1 2 3 V 4 f 3.6 g 3.8 h i 4.0 4.2 10 20 j 4.5 k 10.0 b 0 0 6 30 40 A 50 VDS 65 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max g fs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 100 70 S A 60 80 55 50 ID gfs 70 45 60 40 50 35 30 40 25 30 20 20 15 10 10 0 0 5 1 2 3 4 5.5 V VGS Page 5 0 0 20 40 60 80 120 A ID 2003-01-17 IPD14N03L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 20 A, VGS = 10 V parameter: V GS = VDS IPD14N03L 2.5 32 mΩ V V GS(th) RDS(on) 300µA 24 20 1.5 98% 16 30µA 12 1 typ 8 0.5 4 0 -60 -20 20 60 100 140 °C 0 -60 200 -20 20 60 100 180 °C Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 pF IPD14N03L A Ciss 10 2 C IF 10 3 Coss Crss 10 2 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 30 V VDS 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-01-17 IPD14N03L 13 Typ. avalanche energy 15 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj ) par.: ID = 20 A, VDD = 25 V, RGS = 25 Ω parameter: ID=10 mA IPD14N03L 20 36 mJ V V(BR)DSS E AS 16 14 12 34 33 32 10 31 8 30 6 29 4 28 2 0 25 45 65 85 105 125 145 °C 185 Tj 27 -60 -20 20 60 100 140 °C 200 Tj 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 15 A pulsed IPD14N03L 16 V VGS 12 10 0.2 VDS max 8 0.5 V DS max 0.8 VDS max 6 4 2 0 0 4 8 12 16 20 24 nC 30 Q Gate Page 7 2003-01-17 IPD14N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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