SPB10N10L SIPMOSī Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS 100 V RDS(on) 154 m ID 10.3 A P-TO263-3-2 Type Package Ordering Code Marking SPB10N10L P-TO263-3-2 Q67042-S4164 10N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC=25°C 10.3 TC=100°C 8.1 Pulsed drain current ID puls Unit 42.2 TC=25°C EAS 60 mJ dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 50 W -55... +175 °C Avalanche energy, single pulse ID =10.3 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.3A, VDS =80V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2005-02-14 SPB10N10L Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID = 21 µA Zero gate voltage drain current µA IDSS VDS =100V, VGS =0V, Tj =25°C - 0.01 1 VDS =100V, VGS =0V, Tj =125°C - 1 100 IGSS - 1 100 nA RDS(on) - 169 210 m RDS(on) - 124 154 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=8.1A Drain-source on-state resistance VGS =10V, ID =8.1A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2005-02-14 SPB10N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 4.7 9.4 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =8.1A Input capacitance Ciss VGS =0V, VDS =25V, - 355 444 Output capacitance Coss f=1MHz - 72 90 Reverse transfer capacitance Crss - 42 63 Turn-on delay time td(on) - 4.6 6.9 Rise time tr - 19.1 28.7 Turn-off delay time td(off) - 27.8 41.7 Fall time tf - 17.8 26.7 - 1.1 1.4 - 7.3 11 - 17.7 22 V(plateau) VDD =80V, ID=10.3A - 3.8 - V IS - - 10.3 A - - 42.2 VDD =50V, VGS=10V, ID =10.3A, RG =13 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =10.3A VDD =80V, ID =10.3A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =10.3A - 0.93 1.25 V Reverse recovery time trr VR =50V, IF =lS , - 57 71 ns Reverse recovery charge Qrr diF /dt=100A/µs - 126 158 nC Page 3 2005-02-14 SPB10N10L 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 55 parameter: VGS 10 V SPP10N10L 12 A W 10 45 9 40 8 35 ID Ptot SPP10N10L 7 30 6 25 5 20 4 15 3 10 2 5 1 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 2 SPP10N10L K/W tp = 4.8µs /I D A SPP10N10L 10 0 Z thJC DS ( R ID 10 1 on ) = V DS 10 µs 10 -1 100 µs D = 0.50 10 10 -2 0.20 1 ms 0 0.10 0.05 single pulse 10 ms DC 0.02 10 -3 0.01 10 -1 0 10 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2005-02-14 SPB10N10L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 25 500 m 5.5V 400 4.7V RDS(on) A 5V 6V 7V 10V ID 4.5V 15 350 4.5V 300 4.7V 5V 250 10 200 150 5 5.5V 6V 7V 10V 100 50 0 0 2 4 6 8 V 10 0 0 14 2.5 5 7.5 A 10 12.5 15 17.5 20 25 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 10 16 S A 8 12 g fs ID 7 10 6 5 8 4 6 3 4 2 2 0 0 1 1 2 3 V 5 0 0 2 4 6 8 A 11 ID VGS Page 5 2005-02-14 SPB10N10L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 8.1 A, VGS = 10 V parameter: VGS = VDS 700 SPP10N10L 2.4 V 600 ID=1mA VGS(th) RDS(on) 550 500 450 2 1.8 400 1.6 350 300 1.4 250 98% 200 1.2 150 ID=21µA typ 100 1 50 0 -60 -20 20 60 100 °C 140 0.8 -60 200 -20 20 60 100 Tj °C 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 Ciss pF SPP10N10L A Coss 10 1 C IF 10 2 Crss 10 1 10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 0 0 5 10 15 20 30 V 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2005-02-14 SPB10N10L 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 10.3 A , VDD = 25 V, RGS = 25 parameter: ID = 10.3 A pulsed 60 16 SPP10N10L mJ V 50 12 40 VGS EAS 45 35 10 20V 30 8 50V 80V 25 6 20 15 4 10 2 5 0 25 45 65 85 105 125 145 °C 185 0 0 4 8 12 16 20 nC 28 QGate Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 120 SPP10N10L V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2005-02-14 SPB10N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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