Rev. 1.5 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type Package Tape and Reel Information Marking Packaging BSP123 PG-SOT223 L6433: 4000 pcs/reel BSP123 Non dry BSP123 PG-SOT223 L6327: 1000 pcs/reel BSP123 Non dry Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value A ID TA=25°C 0.37 TA=70°C 0.3 Pulsed drain current Unit ID puls 1.48 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.37A, VDS =80V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Class JESD22-A114-HBM V 0 (<250V) Power dissipation Ptot 1.79 W -55... +150 °C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2010-06-22 Rev. 1.5 BSP123 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 @ min. footprint - 100 115 @ 6 cm2 cooling area 1) - 51 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=250µA Gate threshold voltage, VGS = VDS ID=50µA Zero gate voltage drain current µA IDSS VDS=100V, VGS=0, T j=25°C - - 0.01 VDS=100V, VGS=0, T j=150°C - - 5 IGSS - - 10 nA RDS(on) - 14 30 Ω RDS(on) - 4.8 10 RDS(on) - 3.5 6 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=2.8V, ID=15mA Drain-source on-state resistance VGS=4.5V, ID=0.3A Drain-source on-state resistance VGS=10V, ID=0.37A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2010-06-22 Rev. 1.5 BSP123 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.13 0.27 - S pF Dynamic Characteristics Transconductance g fs VDS≥2*ID*RDS(on)max, ID=0.3A Input capacitance C iss VGS=0, VDS=25V, - 56 70 Output capacitance C oss f=1MHz - 9 11.3 Reverse transfer capacitance C rss - 3.5 4.4 Turn-on delay time td(on) VDD=50V, VGS=10V, - 3.3 5 Rise time tr ID=0.37A, RG =6Ω - 3.2 4.8 Turn-off delay time td(off) - 8.7 13 Fall time tf - 9.4 14 - 0.09 0.13 - 0.8 1.2 - 1.6 2.4 - 3.61 - V - - 0.37 A - - 1.48 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =0.37A VDD =80V, ID =0.37A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =80V, ID = 0.37 A Reverse Diode Inverse diode continuous IS TA=25°C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF = IS - 0.9 1.2 V Reverse recovery time trr VR=50V, IF =lS , - 52.7 79 ns Reverse recovery charge Qrr diF/dt=100A/µs - 17.8 27 nC Page 3 2010-06-22 Rev. 1.5 BSP123 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ≥ 10 V 1.9 BSP123 0.4 W A 1.6 0.32 1.4 0.28 1.2 ID Ptot BSP123 1 0.24 0.2 0.8 0.16 0.6 0.12 0.4 0.08 0.2 0.04 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 °C 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 1 BSP123 10 160 TA 10 3 BSP123 K/W A 10 2 10 1 DS (on ) = V DS ID /I D 10 0 Z thJA tp = 21.0ms R 10 0 D = 0.50 0.20 10 -1 10 0.10 -1 0.05 0.02 10 -2 single pulse DC 10 -2 0 10 10 1 0.01 10 2 V 10 3 VDS 10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 tp Page 4 2010-06-2 3 Rev. 1.5 BSP123 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS A 0.6 0.55 ID 0.5 0.45 0.4 20 10V 5V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V Ω 16 RDS(on) 0.7 14 12 10 0.35 0.3 8 0.25 0.2 6 0.15 4 0.1 2 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 0.1 0.2 0.3 0.4 0.5 A VDS 0.7 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.7 0.4 A S 0.3 ID gfs 0.5 0.25 0.4 0.2 0.3 0.15 0.2 0.1 0.1 0 0 0.05 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 ID Page 5 2010-06-22 Rev. 1.5 BSP123 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.37 A, VGS = 10 V 24 parameter: VGS = VDS ; ID =50µA BSP123 2.2 Ω V 98% 1.8 18 VGS(th) RDS(on) 20 16 14 1.6 1.4 typ. 1.2 12 1 10 2% 0.8 8 98% 0.6 6 4 0.4 typ 0.2 2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C Tj 160 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 1 pF BSP123 A 10 2 10 0 C IF Ciss Coss 10 1 10 -1 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 VDS 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2010-06-22 Rev. 1.5 BSP123 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG); parameter: V DS , ID = 0.37 A pulsed, Tj = 25 °C V(BR)DSS = f (Tj ) 16 BSP123 120 BSP123 V V(BR)DSS V VGS 12 10 112 110 108 106 8 0.2 VDS max 104 0.5 VDS max 6 114 102 0.8 VDS max 100 98 4 96 94 2 92 0 0 0.4 0.8 1.2 1.6 2 nC 2.8 QG 90 -60 -20 20 60 100 °C 180 Tj Page 7 2010-06-22 Rev. 1.5 BSP123 Package Oultline: PG-SOT223 Footprint: Dimensions in mm Page 8 2010-06-22 Rev. 1.5 BSP123 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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