INFINEON Q67042

SPP15P10P
SIPMOS Small-Signal-Transistor
Feature
Product Summary
• P-Channel
VDS
-100
V
• Enhancement mode
RDS(on)
0.24
Ω
• Avalanche rated
ID
-15
A
• dv/dt rated
PG-TO220-3-1
Drain
pin 2
Type
Package
Ordering Code
SPP15P10P
PG-TO220-3-1
Q67042-S4166
Gate
pin1
Source
pin 3
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC=25°C
-15
TC=100°C
-10.6
ID puls
-60
EAS
230
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
128
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
mJ
ID =-15 A , VDD =-25V, RGS=25Ω
Reverse diode dv/dt
kV/µs
IS =-15A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C
TC=25°C
Operating and storage temperature
Tj , Tstg
55/175/56
IEC climatic category; DIN IEC 68-1
Rev 1.2
Page 1
2005-02-11
SPP15P10P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
1.17
-
-
75
-
-
45
Characteristics
Thermal resistance, junction - case
RthJC
SMD version, device on PCB:
RthJA
@ min. footprint
@ 6 cm 2 cooling area
1)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
-100
-
-
-4
-3
-2.1
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
V
VGS =0, ID=-250µA
Gate threshold voltage, VGS = VDS
VGS(th)
ID =-1.54mA
Zero gate voltage drain current
µA
IDSS
VDS =-100V, VGS =0, Tj =25°C
-
-0.1
-1
VDS =-100V, VGS =0, Tj =150°C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
0.18
0.24
Ω
Gate-source leakage current
VGS =-20V, VDS =0
Drain-source on-state resistance
VGS =-10V, ID =-10.6A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 1.2
Page 2
2005-02-11
SPP15P10P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
4.7
9.3
-
S
pF
Dynamic Characteristics
Transconductance
gfs
|VDS|≥ 2*|ID |*RDS(on)max
ID =-10.7A
Input capacitance
Ciss
VGS =0, VDS =-25V,
-
944
1180
Output capacitance
Coss
f=1MHz
-
226
283
Reverse transfer capacitance
Crss
-
91
114
Turn-on delay time
td(on)
VDD =-50V, VGS =-10V,
-
8.9
13.4
Rise time
tr
ID =-15A, RG =6Ω
-
30
45
Turn-off delay time
td(off)
-
35
53
Fall time
tf
-
22
33
-
-4.5
-6.7
-
-15.3
-23
-
-33.4
-50
V(plateau) VDD =-80V, ID =-15A
-
-5.7
-
V
IS
-
-
-15
A
-
-
-60
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =-80V, ID =-15A
VDD =-80V, ID =-15A,
nC
VGS =0 to -10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage
VSD
VGS =0, |IF | = |IS |
-
-0.94
Reverse recovery time
trr
VR =-50V, |IF | = |IS |,
-
100
150
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
419
628
nC
Rev 1.2
Page 3
-1.35 V
2005-02-11
SPP15P10P
1 Power dissipation
2 Drain current
Ptot = f (TC )
ID = f (TC )
parameter: |VGS | ≥ 10V
SPP15P10P
3.6
-16
W
A
-12
2.4
ID
Ptot
2.8
SPP15P10P
-10
2
-8
1.6
-6
1.2
-4
0.8
-2
0.4
0
0
20
40
60
80
0
0
100 120 140 160 °C 190
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Max. transient thermal impedance
ID = f ( VDS )
ZthJC = f (tp )
parameter : D = 0 , TC = 25 °C
parameter : D = tp /T
-10
2 SPP15P10P
10 1
SPP15P10P
K/W
tp = 18.0µs
10 0
Z thJC
ID
A
100 µs
10 -1
-10 1
D = 0.50
10
-2
0.20
/ ID
0.10
0.05
DS
1 ms
=V
n)
S(o
DC
-10
0
-10
1
-10
2
V
-10
3
VDS
Rev 1.2
0.01
single pulse
10 ms
RD
-10 0 -1
-10
0.02
10 -3
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Page 4
2005-02-11
SPP15P10P
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS )
RDS(on) = f (ID )
parameter: Tj =25°C, -VGS
parameter: VGS ; Tj =25°C, -VGS
1
19.9V
A 10V
8V
7V
32
6V
5.5V
28 5V
4.5V
24 4V
Ω
0.7
0.6
20
0.5
16
0.4
12
0.3
8
0.2
4
0.1
0
0
1
4V
4.5V
5V
5.5V
6V
7V
8V
10V
19.9V
0.8
RDS(on)
-I D
40
2
3
4
5
6
V
0
0
8
5
10
15
20
25
30
-VDS
A
40
-ID
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); |VDS |≥ 2 x |ID | x RDS(on)max
gfs = f(ID)
parameter: Tj = 25 °C
parameter: Tj =25°C
14
30
A
S
24
10
20
g fs
-I D
22
18
8
16
14
6
12
10
4
8
6
2
4
2
0
0
1
2
3
4
5
V
0
0
7
-VGS
Rev 1.2
4
8
12
16
20
24
A
30
-ID
Page 5
2005-02-11
SPP15P10P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj)
parameter : ID = -10.6 A, VGS = -10 V
parameter: VGS = VDS
SPP15P10P
5.2
0.75
Ω
4.4
RDS(on)
0.6
98%
4
0.55
3.6
0.5
typ.
3.2
0.45
2.8
0.4
0.35
2.4
2%
0.3
98%
2
0.25
1.6
0.2
typ
1.2
0.15
0.8
0.1
0.4
0.05
0
-60
-20
20
60
100
140
°C
0
-60
200
-20
20
60
100
180
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS =0, f=1 MHz, Tj = 25 °C
parameter: Tj
10
4
-10 2
pF
SPP15P10P
A
Ciss
-10 1
C
IF
10 3
Coss
Crss
10 2
-10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1
0
4
8
12
16
20
24
28
V
36
-VDS
Rev 1.2
-10 -1
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
VSD
Page 6
2005-02-11
SPP15P10P
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj ); par.: ID = -15 A ,
VGS = f (QGate )
VDD = -25 V, RGS = 25 Ω
parameter: ID = -15 A pulsed, Tj = 25°C
250
-16
mJ
SPP15P10P
V
200
VGS
E AS
-12
175
150
20%
-10 50%
80%
125
-8
100
-6
75
-4
50
-2
25
0
25
50
75
100
125
°C
0
0
175
Tj
10
20
30
40
nC
55
|QG |
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj )
SPP15P10P
-120
V (BR)DSS
V
-114
-112
-110
-108
-106
-104
-102
-100
-98
-96
-94
-92
-90
-60
-20
20
60
100
140
°C
200
Tj
Rev 1.2
Page 7
2005-02-11
SPP15P10P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev 1.2
Page 8
2005-02-11