BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS(on) 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C 2.8 TA=70°C 2.3 Pulsed drain current ID puls Unit 11 TA=25°C Gate source voltage VGS ± 20 V Power dissipation Ptot 1.8 W -55... +150 °C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/00 Page 1 2003-10-29 BSP615S2L Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - 19 23 @ min. footprint - - 120 @ 6 cm2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) Thermal resistance, chip to ambient air: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, I D=1mA Gate threshold voltage, VGS = VDS ID=12µA Zero gate voltage drain current µA I DSS V DS=55V, V GS=0V, Tj=25°C - 0.1 1 V DS=55V, V GS=0V, Tj=125°C2) - 10 100 I GSS - 10 100 nA RDS(on) - 86 150 mΩ RDS(on) - 67 90 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, ID=1.4A Drain-source on-state resistance V GS=10V, ID=1.4A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2Defined by design. Not subject to production test. Page 2 2003-10-29 BSP615S2L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 2.7 5.4 - S pF Dynamic Characteristics Transconductance gfs V DS≥2*ID*R DS(on)max, ID=2.3A Input capacitance Ciss V GS=0V, VDS=25V, - 249 330 Output capacitance Coss f=1MHz - 58 78 Reverse transfer capacitance Crss - 22 33 Turn-on delay time td(on) V DD=30V, V GS=4.5V, - 7.8 12 Rise time tr ID=2.8A, - 24 36 Turn-off delay time td(off) RG=24Ω - 22 33 Fall time tf - 23 34 Gate Charge Characteristics Gate to source charge Qgs - 0.8 1.1 Gate to drain charge Qgd - 2.5 3.8 Gate charge total Qg - 7.5 10 V(plateau) VDD =40V, ID=2.8A - 3 - V IS - - 2.8 A - - 11 VDD =40V, ID=2.8A VDD =40V, ID=2.8A, ns nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF=2.8A - 0.8 1.1 V Reverse recovery time trr VR =30V, IF=lS , - 30 38 ns Reverse recovery charge Qrr diF/dt=100A/µs - 30 38 nC Page 3 2003-10-29 BSP615S2L 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC) parameter: V GS≥ 4 V parameter: V GS≥ 10 V 2.4 BSP615S2L 3 BSP615S2L A W 2 2.4 2.2 1.6 2 ID Ptot 1.8 1.4 1.8 1.6 1.2 1.4 1 1.2 0.8 1 0.6 0.8 0.6 0.4 0.4 0.2 0 0 0.2 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 °C 120 TC 160 TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( V DS ) ZthJC = f (t p) parameter : D = 0 , TC = -- parameter : D = t p/T 10 2 BSP615S2L 10 2 BSP615S2L K/W A /I D S( on ) VD S ID R D = ZthJC 10 1 10 1 tp = 120.0µs 10 0 1 ms 10 0 10 -1 D = 0.50 10 ms 0.20 10 0.10 -2 0.05 10 -1 0.02 10 -3 DC 10 -2 -1 10 10 0 10 1 V 10 2 VDS 0.01 single pulse 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 s 10 tp Page 4 2003-10-29 1 BSP615S2L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS 7 A BSP615S2L 300 Ptot = 1.8W BSP615S2L mΩ e ji h VGS [V] a 2.6 g b 2.8 5 c 3.0 d 3.2 4.5 f e 3.4 4 f 3.6 180 g 3.8 160 h 4.0 i 4.5 j 10.0 3.5 e 3 2.5 220 200 g 140 h 120 100 2 d i 80 1.5 j 60 c 1 40 VGS [V] = b 0.5 0 0 f 240 5.5 RDS(on) ID 6 20 a 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 e f 3.4 3.6 g 3.8 h i j 4.0 4.5 10.0 1 2 3 A 4 5.5 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max g fs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 8 5.6 A S 4.8 4.4 6 gfs ID 4 3.6 5 3.2 4 2.8 2.4 3 2 1.6 2 1.2 0.8 1 0.4 0 0 0.5 1 1.5 2 2.5 3 4 V VGS Page 5 0 0 1 2 3 4 A 6 ID 2003-10-29 BSP615S2L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 1.4 A, VGS = 10 V parameter: V GS = VDS 280 BSP615S2L 2.5 mΩ 240 V VGS(th) RDS(on) 220 200 180 160 60 µA 1.5 12 µA 140 120 1 98% 100 80 typ 60 0.5 40 20 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 BSP615S2L A pF Ciss C IF 10 1 10 2 Coss 10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 30 V VDS 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-10-29 BSP615S2L 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QGate) V(BR)DSS = f (Tj) parameter: ID = 2.8 A pulsed parameter: ID=10 mA 16 BSP615S2L 66 V V(BR)DSS V VGS 12 10 0,2 VDS max 62 60 0,8 VDS max 8 58 6 56 4 54 2 52 0 0 BSP615S2L 2 4 6 8 nC 12 Q Gate Page 7 50 -60 -20 20 60 100 °C 180 Tj 2003-10-29 BSP615S2L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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