Bulletin PD-20997 rev. E 12/02 175BGQ030 175BGQ030J SCHOTTKY RECTIFIER 175 Amp Description/ Features Major Ratings and Characteristics Characteristics The 175BGQ030 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. 175BGQ030 Units 175 A 115 °C 248 A 30 V 150°C TJ operation IFSM @ tp = 5 µs sine 8000 A Ultra low forward voltage drop VF 0.45 V Continuous High Current operation 150 °C Guard ring for enhanced ruggedness and long term reliability - 55 to 150 °C PowIRtabTM package IF(AV) Rectangular waveform @ TC IDC Maximum VRRM @175 Apk typical @TJ TJ range High Frequency Operation Case Styles 175BGQ030 www.irf.com 175BGQ030J 1 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 Voltage Ratings Part number VR 175BGQ030 Max. DC Reverse Voltage (V) 30 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 175BGQ Units IF(AV) Max. Average Forward Current 175 A IF(RMS) RMS Forward Current 248 A IFSM Max. Peak One Cycle Non-Repetitive 8000 Surge Current 1500 Conditions 50% duty cycle @ TC = 115°C, rectangular wave form TC = 114°C 5µs Sine or 3µs Rect. pulse A EAS Non-RepetitiveAvalancheEnergy 80 mJ IAR Repetitive Avalanche Current 12 A 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 12 Amps, L = 1.12 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters 175BGQ Units Conditions Typ. Max. VFM IRM Forward Voltage Drop (1) (2) Reverse Leakage Current (1) VF(TO) Threshold Voltage 0.46 0.48 V @ 100A 0.53 0.56 V @ 175A 0.35 0.38 V @ 100A 0.45 0.49 V @ 175A 4.5 mA TJ = 25 °C 450 650 1.3 mA TJ = 125°C TJ = 25 °C TJ = 150 °C VR = rated VR 160 220 mA TJ = 125 °C VR = 15V 1400 2000 mA TJ = 150 °C VR = 30V 0.242 V TJ = TJ max. mΩ rt Forward Slope Resistance 1.4 CT Max. Junction Capacitance 8500 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C LS Typical Series Inductance 3.5 nH Measured from tab to mounting plane 10000 V/ µs dv/dt Max. Voltage Rate of Change (Rated VR) (1) Pulse Width < 300µs, Duty Cycle < 2% (2) VFM = VF(TO) + rt x IF Thermal-Mechanical Specifications Parameters 175BGQ Units TJ Max. Junction Temperature Range -55 to 150 °C Conditions Tstg Max. Storage Temperature Range -55 to 150 °C RthJC Max. Thermal Resistance Junction to Case 0.25 °C/W DCoperation RthCS Typical Thermal Resistance, Case to 0.20 °C/W Mounting surface , smooth and greased Heatsink wt Approximate Weight T Mounting Torque Case Style 2 5 (0.18) g (oz.) Min. 1.2 (10) Max. 2.4 (20) N*m (Ibf-in) PowIRtabTM www.irf.com 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 Reverse Current - I R (mA) 10000 100 1000 TJ = 150°C 125°C 100 100°C 10 75°C 50°C 1 25°C 0.1 0.01 T J = 150°C 0 5 10 15 20 25 30 T J = 125°C Reverse Voltage - VR (V) T J = 25°C Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 10000 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 1000 10 1 0 0.2 0.4 0.6 0.8 1 T J = 25°C 1000 1.2 0 5 10 15 20 25 30 Forward Voltage Drop - V FM (V) Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 35 Thermal Impedance Z thJC (°C/W) 1 0.1 D= D= D= D= D= 0.75 0.50 0.33 0.25 0.20 PDM Single Pulse (Thermal Resistance) Notes: t1 t2 1. Duty factor D = t 1/ t 2 2. Peak TJ = PDM x Z thJC+ T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.irf.com 3 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 180 DC 130 120 110 Square wave (D = 0.50) 80% Rated VR applied 100 90 0 40 80 140 120 RMS Limit 100 DC 80 60 40 20 see note (2) 80 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 160 140 Average Power Loss - (Watts) Allowable Case Temperature - (°C) 150 120 160 200 240 0 280 0 Average Forward Current - I F(AV) (A) 100 150 200 250 Fig. 6 - Forward Power Loss Characteristics 10000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge FSM (A) Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current Non-Repetitive Surge Current - I 50 Average Forward Current - I F(AV) (A) 1000 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L IRFP460 DUT Rg = 25 ohm CURRENT MONITOR HIGH-SPEED SWITCH FREE-WHEEL DIODE + Vd = 25 Volt 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 Outline Table Case Style PowIRtabTM Dimensions in millimeters and (inches) Case Style PowIRtabTM "J" version Dimensions in millimeters and (inches) www.irf.com 5 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 Ordering Information Table Device Code 175 BGQ 030 J 2 4 1 3 1 - Current Rating 2 - Essential Part Number 3 - Voltage code: Code = VRRM 4 - none = PowIRtabTM standard 6 J *************************************************** This model has been developed by Wizard SPICE MODEL GENERATOR (1999) ( International Rectifier Corporation ) contains Proprietary Information = Short Lead Version This model *************************************************** SPICE Model Diode is composed by a simple diode plus paralled VCG2T *************************************************** .SUBCKT 175bgq30 ANO CAT D1 ANO 1 DMOD (0.24359) *Define diode model . MODEL DMOD D ( IS=1.3875007809205E-04A, N=1.00125798542747, BV=30V, + IBV=0.160931851779476A,RS= 0.0001656412,CJO=5.05942026644635E-08, +VJ=1.99501834690192,XTI=2,EG=0.711439066978857) ***************************************************** * Implementation of VCG2T VX 1 2 DC 0V R1 2 CAT TRES 1E-6 .MODEL TRES RES (R=1, TC1=4.01799427965033) GP1 ANO CAT VALUE= {-ABS (I(VX)) *(EXP((((-3.827089E-03/ 4.017994)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*0.122401*ABS(V(ANO,CAT)))-1)} ***************************************************** .ENDS 175bgq30 Thermal Model Subcircuit .SUBCKT 175bgq30T 5 1 CTHERM1 CTHERM2 CTHERM3 CTHERM4 5 4 3 2 4 3 2 1 1.30E+3 2.87E+2 1.56E+4 2.37E+5 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5 4 3 2 4 3 2 1 3.13E-2 1.42E-1 6.70E-2 1.72E-4 .ENDS 175bgq30T 6 www.irf.com 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/02 www.irf.com 7