IRF 175BGQ030J

Bulletin PD-20997 rev. E 12/02
175BGQ030
175BGQ030J
SCHOTTKY RECTIFIER
175 Amp
Description/ Features
Major Ratings and Characteristics
Characteristics
The 175BGQ030 Schottky rectifier has been optimized for ultra low
forward voltage drop specifically for low voltage output in high
current AC/DC power supplies.
The proprietary barrier technology allows for reliable operation up
to 150°C junction temperature. Typical applications are in
switching power supplies, converters, reverse battery protection,
and redundant power subsystems.
175BGQ030
Units
175
A
115
°C
248
A
30
V
150°C TJ operation
IFSM @ tp = 5 µs sine
8000
A
Ultra low forward voltage drop
VF
0.45
V
Continuous High Current operation
150
°C
Guard ring for enhanced ruggedness and long term
reliability
- 55 to 150
°C
PowIRtabTM package
IF(AV) Rectangular waveform
@ TC
IDC
Maximum
VRRM
@175 Apk typical
@TJ
TJ
range
High Frequency Operation
Case Styles
175BGQ030
www.irf.com
175BGQ030J
1
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Voltage Ratings
Part number
VR
175BGQ030
Max. DC Reverse Voltage (V)
30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
175BGQ Units
IF(AV) Max. Average Forward Current
175
A
IF(RMS) RMS Forward Current
248
A
IFSM
Max. Peak One Cycle Non-Repetitive
8000
Surge Current
1500
Conditions
50% duty cycle @ TC = 115°C, rectangular wave form
TC = 114°C
5µs Sine or 3µs Rect. pulse
A
EAS
Non-RepetitiveAvalancheEnergy
80
mJ
IAR
Repetitive Avalanche Current
12
A
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and
with rated VRRM applied
TJ = 25 °C, IAS = 12 Amps, L = 1.12 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
175BGQ Units
Conditions
Typ. Max.
VFM
IRM
Forward Voltage Drop
(1) (2)
Reverse Leakage Current (1)
VF(TO) Threshold Voltage
0.46 0.48
V
@ 100A
0.53 0.56
V
@ 175A
0.35 0.38
V
@ 100A
0.45 0.49
V
@ 175A
4.5
mA
TJ = 25 °C
450 650
1.3
mA
TJ = 125°C
TJ = 25 °C
TJ = 150 °C
VR = rated VR
160 220
mA
TJ = 125 °C
VR = 15V
1400 2000
mA
TJ = 150 °C
VR = 30V
0.242
V
TJ = TJ max.
mΩ
rt
Forward Slope Resistance
1.4
CT
Max. Junction Capacitance
8500
pF
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
LS
Typical Series Inductance
3.5
nH
Measured from tab to mounting plane
10000
V/ µs
dv/dt Max. Voltage Rate of Change
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) VFM = VF(TO) + rt x IF
Thermal-Mechanical Specifications
Parameters
175BGQ Units
TJ
Max. Junction Temperature Range
-55 to 150
°C
Conditions
Tstg
Max. Storage Temperature Range
-55 to 150
°C
RthJC Max. Thermal Resistance Junction
to Case
0.25
°C/W
DCoperation
RthCS Typical Thermal Resistance, Case to
0.20
°C/W
Mounting surface , smooth and greased
Heatsink
wt
Approximate Weight
T
Mounting Torque
Case Style
2
5 (0.18)
g (oz.)
Min.
1.2 (10)
Max.
2.4 (20)
N*m
(Ibf-in)
PowIRtabTM
www.irf.com
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Reverse Current - I R (mA)
10000
100
1000
TJ = 150°C
125°C
100
100°C
10
75°C
50°C
1
25°C
0.1
0.01
T J = 150°C
0
5
10
15
20
25
30
T J = 125°C
Reverse Voltage - VR (V)
T J = 25°C
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10000
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
1000
10
1
0
0.2
0.4
0.6
0.8
1
T J = 25°C
1000
1.2
0
5
10
15
20
25
30
Forward Voltage Drop - V FM (V)
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
35
Thermal Impedance Z thJC (°C/W)
1
0.1
D=
D=
D=
D=
D=
0.75
0.50
0.33
0.25
0.20
PDM
Single Pulse
(Thermal Resistance)
Notes:
t1
t2
1. Duty factor D = t 1/ t 2
2. Peak TJ = PDM x Z thJC+ T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
www.irf.com
3
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
180
DC
130
120
110 Square wave (D = 0.50)
80% Rated VR applied
100
90
0
40
80
140
120
RMS Limit
100
DC
80
60
40
20
see note (2)
80
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
160
140
Average Power Loss - (Watts)
Allowable Case Temperature - (°C)
150
120
160
200
240
0
280
0
Average Forward Current - I F(AV) (A)
100
150
200
250
Fig. 6 - Forward Power Loss Characteristics
10000
At Any Rated Load Condition
And With Rated VRRM Applied
Following Surge
FSM
(A)
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
Non-Repetitive Surge Current - I
50
Average Forward Current - I F(AV) (A)
1000
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
IRFP460
DUT
Rg = 25 ohm
CURRENT
MONITOR
HIGH-SPEED
SWITCH
FREE-WHEEL
DIODE
+
Vd = 25 Volt
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
www.irf.com
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Outline Table
Case Style PowIRtabTM
Dimensions in millimeters and (inches)
Case Style PowIRtabTM "J" version
Dimensions in millimeters and (inches)
www.irf.com
5
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Ordering Information Table
Device Code
175 BGQ 030
J
2
4
1
3
1
-
Current Rating
2
-
Essential Part Number
3
-
Voltage code: Code = VRRM
4
-
none = PowIRtabTM standard
6
J
***************************************************
This model has been developed by
Wizard SPICE MODEL GENERATOR (1999)
( International Rectifier Corporation )
contains Proprietary Information
= Short Lead Version
This model
***************************************************
SPICE Model Diode is composed by a
simple diode plus paralled VCG2T
***************************************************
.SUBCKT 175bgq30 ANO CAT
D1 ANO 1 DMOD (0.24359)
*Define diode model
. MODEL DMOD D ( IS=1.3875007809205E-04A, N=1.00125798542747, BV=30V,
+ IBV=0.160931851779476A,RS= 0.0001656412,CJO=5.05942026644635E-08,
+VJ=1.99501834690192,XTI=2,EG=0.711439066978857)
*****************************************************
* Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES (R=1, TC1=4.01799427965033)
GP1 ANO CAT VALUE= {-ABS (I(VX)) *(EXP((((-3.827089E-03/
4.017994)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*0.122401*ABS(V(ANO,CAT)))-1)}
*****************************************************
.ENDS 175bgq30
Thermal Model Subcircuit
.SUBCKT 175bgq30T 5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
1.30E+3
2.87E+2
1.56E+4
2.37E+5
RTHERM1
RTHERM2
RTHERM3
RTHERM4
5
4
3
2
4
3
2
1
3.13E-2
1.42E-1
6.70E-2
1.72E-4
.ENDS 175bgq30T
6
www.irf.com
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/02
www.irf.com
7