PD - 97157
IRLML0100TRPbF
HEXFET® Power MOSFET
VDS
VGS Max
100
± 16
V
V
RDS(on) max
220
m
:
235
m
:
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
G 1
3 D
S
Micro3TM (SOT-23)
IRLML0100TRPbF
2
Application(s)
• Load/ System Switch
Features and Benefits
Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
results in
⇒
Absolute Maximum Ratings
Max.
Units
VDS
Symbol
Drain-Source Voltage
Parameter
100
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
1.6
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
1.3
IDM
Pulsed Drain Current
7.0
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.8
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 16
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
A
W
W/°C
Thermal Resistance
Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
f
Typ.
Max.
–––
100
–––
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
www.irf.com
1
11/24/09
IRLML0100TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100
–––
–––
–––
0.10
–––
–––
190
235
–––
178
220
1.0
–––
2.5
–––
–––
20
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
1.3
–––
Ω
gfs
Forward Transconductance
5.7
–––
–––
S
Qg
Total Gate Charge
–––
2.5
–––
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
Drain-to-Source Leakage Current
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ
V
µA
d
d
VGS = 4.5V, ID = 1.3A
VGS = 10V, ID = 1.6A
VDS = VGS, ID = 25µA
VDS =100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA
VGS = 16V
VGS = -16V
VDS = 50V, ID = 1.6A
ID = 1.6A
nC
Qgs
Gate-to-Source Charge
–––
0.5
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.2
–––
VGS = 4.5V
td(on)
Turn-On Delay Time
–––
2.2
–––
VDD =50V
tr
Rise Time
–––
2.1
–––
td(off)
Turn-Off Delay Time
–––
9.0
–––
tf
Fall Time
–––
3.6
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
290
–––
VGS = 0V
Coss
Output Capacitance
–––
27
–––
Crss
Reverse Transfer Capacitance
–––
13
–––
ns
VDS =50V
d
d
ID = 1.0A
RG = 6.8Ω
pF
VDS = 25V
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
Min. Typ. Max. Units
–––
–––
1.1
(Body Diode)
ISM
Pulsed Source Current
c
A
–––
–––
Conditions
MOSFET symbol
showing the
integral reverse
7.0
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
TJ = 25°C, IS = 1.1A, VGS = 0V
trr
Reverse Recovery Time
–––
20
30
ns
TJ = 25°C, VR = 50V, IF=1.1A
Qrr
Reverse Recovery Charge
–––
13
20
nC
di/dt = 100A/µs
2
V
d
d
www.irf.com
IRLML0100TRPbF
100
100
TOP
10
BOTTOM
≤60µs PULSE WIDTH
Tj = 150°C
VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
≤60µs PULSE WIDTH
Tj = 25°C
1
0.1
TOP
10
BOTTOM
VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
1
2.25V
2.25V
0.01
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
1
VDS, Drain-to-Source Voltage (V)
TJ = 150°C
1
0.1
TJ = 25°C
VDS = 50V
≤60µs PULSE WIDTH
0.01
ID = 1.6A
VGS = 10V
2.0
1.5
1.0
0.5
1.5
2.0
2.5
3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLML0100TRPbF
10000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
1000
C, Capacitance (pF)
16
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Ciss
100
Coss
Crss
10
ID= 1.6A
VDS= 80V
VDS= 50V
VDS= 20V
12
8
4
0
1
0
1
10
1
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
5
6
7
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
3
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
1
0.1
TJ = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
100µsec
1
1msec
0.1
TA = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
10msec
0.01
0.01
0.4
0.6
0.8
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
QG Total Gate Charge (nC)
1.0
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRLML0100TRPbF
2.0
RD
V DS
ID , Drain Current (A)
VGS
1.5
D.U.T.
RG
+
- VDD
VGS
1.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
0.5
VDS
90%
0.0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( ZthJA )
1000
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
600
( Ω)
RDS(on), Drain-to -Source On Resistance m
RDS(on), Drain-to -Source On Resistance (mΩ)
IRLML0100TRPbF
ID = 1.6A
550
500
450
400
TJ = 125°C
350
300
250
TJ = 25°C
200
150
2
4
6
8
10
270
250
Vgs = 4.5V
230
Vgs = 10V
210
190
170
0
2
4
6
8
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Id
Vds
Vgs
L
D
VCC
0
Vgs(th)
Qgodr
Qgd
20K
1K
S
Qgs2 Qgs1
Fig 14a. Basic Gate Charge Waveform
6
DUT
G
Fig 14b. Gate Charge Test Circuit
www.irf.com
IRLML0100TRPbF
100
80
2.0
Power (W)
VGS(th), Gate threshold Voltage (V)
2.5
1.5
ID = 25uA
60
40
ID = 250uA
1.0
20
0
0.5
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
www.irf.com
1E-005 0.0001
0.001
0.01
0.1
1
10
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRLML0100TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
6
5
SYMBOL
D
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
3
6
C
E
E1
1
2
0.15 [0.006] M C B A
0.10 [0.004] C
A1
5
B
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
MILLIMETERS
L1
Recommended Footprint
c
0.972
0.950
L2
0.802
3X L
7
1.900
INCHES
MIN
MAX
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MAX
0.0004 %6&
%6&
REF
BSC
0
8
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDE D BY LAS T DIGIT OF CALE NDAR YEAR
PART NUMBER
Y = YEAR
W = WEE K
LOT
CODE
PART NUMBER CODE REF ERE NCE :
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
Note: A line above the work week
(as shown here) indicates Lead - Free.
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WE EK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDE D BY A LET TE R
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WE EK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com
IRLML0100TRPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
9
IRLML0100TRPbF
Orderable part number
Package Type
IRLML0100TRPbF
Micro3
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Qualification information†
Cons umer
Qualification level
(per JE DE C JE S D47F
††
†††
guidelines )
MS L1
Moisture Sensitivity Level
Micro3
RoHS compliant
†††
(per IPC/JE DE C J-S T D-020D
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2009
10
www.irf.com