PD - 96208
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
IRLR8256PbF
IRLU8256PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
5.7m:
25V
Qg
10nC
D
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
S
S
D
G
G
D-Pak
I-Pak
IRLR8256PbF IRLU8256PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
81
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
57
ID @ TC = 25°C
ID @ TC = 100°C
IDM
c
PD @TC = 25°C
Maximum Power Dissipation
PD @TC = 100°C
Maximum Power Dissipation
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Units
25
V
f
f
A
325
g
g
63
W
31
0.42
-55 to + 175
W/°C
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
h
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
g
Typ.
Max.
–––
2.4
–––
50
–––
110
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 11
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1
12/19/08
IRLR/U8256PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/∆TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
25
–––
–––
18
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
4.2
6.7
5.7
8.5
VGS(th)
∆VGS(th)/∆TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35
–––
1.8
-7.2
2.35
V
VDS = VGS, ID = 25µA
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
1.0
150
µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
gfs
Qg
Forward Transconductance
Total Gate Charge
81
–––
–––
10
–––
15
S
VDS = 13V, ID = 20A
Qgs1
Qgs2
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
–––
–––
2.3
1.6
–––
–––
nC
VDS = 13V
VGS = 4.5V
Qgd
Qgodr
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
3.6
2.6
–––
–––
Output Charge
–––
–––
5.1
9.0
–––
–––
RG
td(on)
Gate Resistance
Turn-On Delay Time
–––
–––
2.5
9.7
3.9
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
46
12
–––
–––
Fall Time
Input Capacitance
–––
–––
8.5
1470
–––
–––
Output Capacitance
Reverse Transfer Capacitance
–––
–––
453
185
–––
–––
Qsw
Qoss
tf
Ciss
Coss
Crss
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
e
e
ID = 20A
See Fig. 16
nC
VDS = 16V, VGS = 0V
Ω
VDD = 13V, VGS = 4.5V
ns
ID = 20A
e
RG = 1.8Ω
See Fig. 14
VGS = 0V
pF
VDS = 13V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
EAR
Repetitive Avalanche Energy
c
d
c
Typ.
–––
–––
Max.
86
20
Units
mJ
A
–––
6.3
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode)
Diode Forward Voltage
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
2
c
Min. Typ. Max. Units
–––
–––
f
Conditions
MOSFET symbol
81
A
showing the
integral reverse
–––
–––
325
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
–––
–––
19
17
29
26
ns
nC
TJ = 25°C, IF = 20A, VDD = 13V
di/dt = 300A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLR/U8256PbF
1000
1000
100
BOTTOM
10
1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
BOTTOM
10
2.5V
≤60µs PULSE WIDTH
2.5V
≤60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
Tj = 175°C
1
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
T J = 175°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
ID = 25A
VGS = 10V
1.5
1.0
0.5
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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8
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRLR/U8256PbF
10000
5.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 20A
C, Capacitance (pF)
C oss = C ds + C gd
Ciss
1000
Coss
Crss
VDS= 20V
VDS= 13V
4.0
3.0
2.0
1.0
0.0
100
1
10
0
100
1000
3
4
5
6
7
8
9 10 11 12 13
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
2
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
TJ = 175°C
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
2.5
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR/U8256PbF
90
2.5
Limited By Package
VGS(th), Gate threshold Voltage (V)
80
ID, Drain Current (A)
70
60
50
40
30
20
10
0
2.0
1.5
ID = 25µA
1.0
0.5
25
50
75
100
125
150
175
-75 -50 -25
T C , Case Temperature (°C)
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
τJ
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ1
τ2
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
1E-005
0.0001
τ4
τ4
Ri (°C/W)
τi (sec)
0.04252
0.000007
0.57953
0.000109
1.17480
0.001003
τ
0.60472
0.005976
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
R4
R4
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8256PbF
15V
+
V
- DD
IAS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
D.U.T
RG
20V
VGS
DRIVER
L
VDS
400
ID
TOP
5.57A
8.50A
BOTTOM 20A
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
V DS
V GS
RG
Current Regulator
Same Type as D.U.T.
D.U.T.
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
50KΩ
12V
RD
.2µF
Fig 14a. Switching Time Test Circuit
.3µF
D.U.T.
+
V
- DS
VDS
90%
VGS
3mA
IG
ID
Current Sampling Resistors
10%
VGS
td(on)
Fig 13. Gate Charge Test Circuit
6
tr
t d(off)
tf
Fig 14b. Switching Time Waveforms
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IRLR/U8256PbF
D.U.T
Driver Gate Drive
P.W.
+
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
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IRLR/U8256PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRLR/U8256PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
(;$03/( 7+,6,6$1,5)8
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1($
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRLR/U8256PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRLR/U8256PbF
Orderable part number
Package Type
IRLR8256PBF
IRLR8256TRPBF
D-PAK
D-PAK
IRLR8256PBF
I-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and Reel
2000
Tube/Bulk
Note
75
Qualification Information†
Qualification level
Industrial
††
†††
(per JEDEC JESD47F
guidelines)
Comments: This family of products has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
Moisture Sensitivity Level
D-PAK
MSL1
(per JEDEC J-STD-020D†††)
Not applicable
I-PAK
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 50A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-790
Visit us at www.irf.com for sales contact information.12/2008
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11