PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS(on) max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET® Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits Features Industry-Standard TSOP-6 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRLTS6342TRPBF Absolute Maximum Ratings TSOP-6 ⇒ Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 3000 Note Max. Units VGS Drain-to-Source Voltage Gate-to-Source Voltage 30 ±12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 8.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 6.7 VDS IDM PD @TA = 25°C PD @TA = 70°C Pulsed Drain Current e Power Dissipation e Parameter c Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A 64 2.0 1.3 0.02 -55 to + 150 W W/°C °C Notes through are on page 2 www.irf.com 1 9/27/11 IRLTS6342PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Min. Typ. Max. Units Conditions 30 ––– ––– ––– 0.5 ––– ––– ––– ––– ––– 25 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 23 14.0 17.5 ––– -4.3 ––– ––– ––– ––– ––– 11 0.5 4.6 2.2 5.4 11 32 15 1010 96 70 ––– ––– 17.5 22.0 1.1 ––– 1.0 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– VGS = 0V, ID = 250μA V mV/°C Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 8.3A mΩ VGS = 2.5V, ID = 6.7A VDS = VGS, ID = 10μA V mV/°C VDS = 24V, VGS = 0V μA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V nA VGS = -12V VDS = 10V, ID = 6.4A S VGS = 4.5V VDS = 15V nC ID = 6.4A Min. Typ. Max. Units d d Ω ns pF VDD = 15V, VGS = 4.5V ID = 6.4A RG = 6.8Ω See Figs. 18 VGS = 0V VDS = 25V ƒ = 1.0MHz e Diode Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c ––– ––– 2.0 ––– ––– 64 Conditions A MOSFET symbol showing the integral reverse p-n junction diode. D G S VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 8.3A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 13 5.8 20 8.7 ns nC TJ = 25°C, IF = 6.4A, VDD = 24V di/dt = 100/μs Thermal Resistance Parameter RθJA Junction-to-Ambient e Typ. ––– d d Max. 62.5 Units °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 ich square copper board. Rθ is measured at T J of approximately 90°C. 2 www.irf.com IRLTS6342PbF 100 1000 ID, Drain-to-Source Current (A) 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 2.5V 2.0V 1.7V 1.6V 1.5V 1.4V 1 0.1 1.4V 10 BOTTOM 1.4V 1 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 0.01 0.1 1 10 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 ID = 8.3A VGS = 4.5V 1.6 1.4 1.2 1.0 0.8 0.6 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 14 10000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C, Capacitance (pF) VGS 10V 4.5V 2.5V 2.0V 1.7V 1.6V 1.5V 1.4V 1000 Ciss Coss Crss 100 ID= 6.4A 12 VDS = 24V VDS = 15V VDS = 6.0V 10 8 6 4 2 0 0 10 1 10 100 5 10 15 20 25 30 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRLTS6342PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C 100 T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec 100μsec 10 10msec DC 1 TA = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 0.1 0.4 0.6 0.8 1.0 1.2 0.1 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 10 100 Fig 8. Maximum Safe Operating Area 1.4 VGS(th), Gate threshold Voltage (V) 8.0 ID , Drain Current (A) 1.0 VDS, Drain-to-Source Voltage (V) 6.0 4.0 2.0 0.0 1.2 1.0 0.8 ID = 10μA ID = 250μA ID = 1.0mA 0.6 0.4 0.2 0.0 25 50 75 100 125 150 -75 -50 -25 T A , Ambient Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 10 1 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.001 1E-006 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com 45 ( Ω) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (mΩ) IRLTS6342PbF ID = 8.0A 40 35 30 25 20 TJ = 125°C 15 10 TJ = 25°C 5 1 2 3 4 5 6 7 8 9 10 11 12 60 50 40 30 Vgs = 2.5V 20 Vgs = 4.5V 10 0 0 10 20 30 40 50 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 100 16000 90 ID 0.9A 1.5A BOTTOM 6.4A TOP 80 70 12000 60 Power (W) EAS , Single Pulse Avalanche Energy (mJ) 70 50 40 30 8000 4000 20 10 0 25 50 75 100 125 0 1E-8 150 1E-7 Starting TJ , Junction Temperature (°C) Driver Gate Drive - - P.W. + • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period D.U.T. ISD Waveform Reverse Recovery Current V DD D= Period * RG 1E-3 VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - 1E-4 Fig 15. Typical Power vs. Time + + 1E-5 Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T 1E-6 + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs www.irf.com 5 IRLTS6342PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 17a. Gate Charge Test Circuit V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01Ω tp Fig 18a. Unclamped Inductive Test Circuit V DS V GS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 19a. Switching Time Test Circuit 6 Fig 18b. Unclamped Inductive Waveforms 10% VGS td(on) tr td(off) tf Fig 19b. Switching Time Waveforms www.irf.com IRLTS6342PbF TSOP-6 Package Outline TSOP-6 Part Marking Information W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK PART NUMBER T OP LOT CODE PART NUMBER CODE REF ERENCE: A = S I3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 F = IRF5801 G = IRF 5803 H = IRF5804 I = IRF5805 J = IRF 5806 K = IRF5810 N = IRF5802 O= P= R= S= IRLT S6342TRPBF IRF TS8342TRPBF IRF TS 9342TRPBF IRLT S2242T RPBF Note: A line above the work week (as s hown here) indicates Lead-Free. YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LETTER YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 X Y Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRLTS6342PbF TSOP-6 Tape & Reel Information Qualification information† Qualification level Moisture Sensitivity Level Cons umer (per JE DE C JE S D47F ††† guidelines ) MS L1 TSOP-6 ††† (per JE DE C J-S T D-020D RoHS compliant † †† ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† ††† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2011 8 www.irf.com