PNP Silicon Darlington Transistors PZTA 63 PZTA 64 For general AF applications ● High collector current ● High current gain ● Complementary types: PZTA 13, PZTA 14 (NPN) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZTA 63 PZTA 64 PZTA 63 PZTA 64 Q62702-Z2031 Q62702-Z2032 B SOT-223 C E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCES 30 Collector-base voltage VCB0 30 Emitter-base voltage VEB0 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 ˚C Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 72 Junction - soldering point Rth JS ≤ 17 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZTA 63 PZTA 64 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 100 µA V(BR)CES 30 – – Collector-base breakdown voltage IC = 100 µA, IB = 0 V(BR)CB0 30 – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EB0 10 – – Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 ˚C ICB0 – – – – 100 10 nA µA Emitter-base cutoff current VEB = 10 V, IC = 0 IEB0 – – 100 nA 5000 10000 10000 20000 – – – – – – – – DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V – hFE PZTA 63 PZTA 64 PZTA 63 PZTA 64 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VCEsat – – 1.5 Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VBEsat – – 2.0 fT 125 – – V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 MHz PZTA 63 PZTA 64 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 3 PZTA 63 PZTA 64 Collector-emitter saturation voltage IC = f (VCE sat) hFE = 1000 Base-emitter saturation voltage IC = f (VBE sat) hFE = 1000 Collector cutoff current ICB0 = f (TA) VCE = 30 V Semiconductor Group 4