PD - 95202
IRF7402PbF
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
Description
HEXFET® Power MOSFET
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = 20V
RDS(on) = 0.035Ω
Top View
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
6.8
5.4
54
2.5
1.6
0.02
± 12
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Max.
Units
50
°C/W
1
9/30/04
IRF7402PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
6.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.024 ––– V/°C Reference to 25°C, ID = 1mA
0.035
VGS = 4.5V, ID = 4.1A
Ω
0.050
VGS = 2.7V, ID = 3.5A
––– –––
V
VDS = VGS, ID = 250µA
––– –––
S
VDS = 10V, ID = 1.9A
––– 1.0
VDS = 16V, VGS = 0V
µA
––– 25
VDS = 16V, V GS = 0V, TJ = 125°C
––– 100
VGS = 12V
nA
––– -100
VGS = -12V
14
22
ID = 3.8A
2.0 3.0
nC VDS = 16V
6.3 9.5
VGS = 4.5V, See Fig. 6 and 12
5.1 –––
VDD = 10V
47 –––
ID = 3.8A
ns
24 –––
RG = 6.2Ω
32 –––
R D = 2.6Ω
650 –––
VGS = 0V
300 –––
pF
VDS = 15V
150 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
2.5
–––
–––
54
–––
–––
–––
–––
51
69
1.2
77
100
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 3.8A, VGS = 0V
TJ = 25°C, IF = 3.8A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 3.8A, di/dt ≤ 96A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
When mounted on 1 inch square copper board, t<10 sec
2
This data sheet has curves & data from IRF7601
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IRF7402PbF
100
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
10
1
20µs PULSE WIDTH
TJ = 25°C
A
1.5V
0.1
0.1
1
10
10
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150°C
TJ = 25°C
V DS = 10V
20µs PULSE WIDTH
2.0
2.5
3.0
A
3.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
Fig 2. Typical Output Characteristics
2.0
1.5
1
VDS , Drain-to-Source Voltage (V)
100
0.1
20µs PULSE WIDTH
TJ = 150°C
A
0.1
0.1
Fig 1. Typical Output Characteristics
1
1.5V
1
VDS , Drain-to-Source Voltage (V)
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
I D = 3.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
A
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7402PbF
1000
C, Capacitance (pF)
Ciss
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V GS, Gate-to-Source Voltage (V)
1200
800
Coss
600
400
Crss
200
0
1
10
100
I D = 3.8A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
12
16
20
24
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
8
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
100
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
4
A
2.4
100us
10
1ms
1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7402PbF
8.0
RD
V DS
ID , Drain Current (A)
VGS
6.0
D.U.T.
RG
+
- V DD
4.5V
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7402PbF
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
QG
.3µF
4.5V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 12b. Gate Charge Test Circuit
0.3
RDS(on) , Drain-to-Source On Resistance ( Ω )
RDS(on) , Drain-to-Source On Resistance ( Ω )
Fig 12a. Basic Gate Charge Waveform
0.2
0.1
0.0
0
3
6
I
9
12
15
, , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
6
ID
Current Sampling Resistors
0.05
0.04
ID, = 5.7A
0.03
0.02
2
4
6
8
V /5 , Gate-to-Source Voltage (V)
Fig 14. Typical On-Resistance Vs. Gate
Voltage
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A
IRF7402PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
6
8
7
6
5
1
2
3
4
H
E
0.25 [.010]
A
e1
MIN
1.35
1.75
A1 .0040
.0098
0.10
0.25
8X b
MAX
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
0.25 [.010]
MILLIMETERS
MAX
.0688
e1
6X e
INCHES
MIN
.0532
A
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNATIONAL
RECTIFIER
LOGO
XXXX
F7101
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
A = ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
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7
IRF7402PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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